隨著半導體元件尺寸的持續縮微，矽基板半導體元件因受限於其材料物理限制，難以滿足現今元件特性需求。研究新型高遷移率材料(矽鍺化合物、純鍺)及堆疊製程以突破摩爾定律限制及提升電性可謂當今研究的首要目標，而在元件製程的熱預算控制需求相對提升。有鑒於此，在本論文中，將針對不同材料(矽、矽鍺與純鍺)製程中摻雜活化及金屬後退火兩大熱處理製程以不同頻率的微波退火取代原本傳統快速熱退火，以材料對頻率吸收度差異來達到材料針對性退火，降低整體熱處理製程額外產生的熱預算。在微波退火技術中，將針對三種不同半導體材料採用2.45GHz及5.8GHz頻段做活化程度分析比較，並試圖找出頻率對材料的針對性，以達到針對材料退火降低製成的熱預算。另外，在金屬後退火製程中，HKMG會因為傳統的高溫摻雜活化導致EOT增加，使得元件性能下降，而我們將會以2.45GHz及5.8GHz頻段的低溫微波退火取代傳統熱退火方式，並分析其電性的改善。
本論文中將分成三部分：第一部分，在矽、矽鍺、純鍺材料基板中離子佈值硼離子與熱退火，以不同頻率(2.45GHz 和5.8GHz)的微波退火和傳統快速熱退火進行參雜活化，經量測後結果發現使用5.8GHz頻率的微波退火中，矽有高活化程度，而純鍺和矽鍺薄膜中，利用2.45GHz微波退火做摻雜活化可以達到高活化程度，利用不同頻率，我們可以達到變頻對材料的針對性退火，以降低整體熱處理製程所產生的額外熱預算。
第二部分，我們將對TiN/Al/TiN/HfO2/Si結構的電容進行退火，並針對等效氧化層的增加與鋁的擴散程度進行研究，在微波退火30秒下，電容有良好的電容值、低漏電流且鋁層幾乎沒有擴散至TiN及HfO2，但由於退火時間過少，在gate-first製程中，無法達到參雜活化的效果，因此我們將退火時間提升到100秒，可以發現到在5.8GHz微波退火中，因為較長的退火時間會導致在高能量下元件漏電明顯及閘極中鋁擴散至介電層導致閾值電壓偏移，而2.45GHz的微波退火，能有效避免上述現象發生。
最後，我們將以gate-last製程方式製作p-MOSFETs。在gate-last製程中，我們將分為摻雜活化及金屬後退火修復的兩次退火，摻雜活化部分，將會以論文中第一部分分析出的高活化程度的微波退火參數進行退火活化，接著再疊完金屬閘極後，以第二部分分析出的參數進行金屬後修復對火，以達到最小的額外熱預算產生及提升電性。
分析以上結果我們可以得到，在熱處理製程中，以不同頻率的微波退火可以達到針對材料活化的效果，而在金屬後退火中，以低頻率(2.45 GHz)微波退火可以有效的達到修復效果並抑制等校氧化層增加及鋁擴散。綜合上述兩點，元件製程中利用變頻微波的材料針對性退火，可以達到有效降低熱預算並提升元件特性之效果。

In recent times, the feature size of logic devices is scaling down, traditional Si-devices will be limited by the physical limitations of materials. The high mobility and improved process would be used to enhance the device’s performance, in this paper, we will analyze the dopant activation level of different material annealed by 2.45GHz and 5.8GHz MWA and RTA, trying to find the material-targeted annealing method to reduce the thermal budget in the annealing process. In addition, in gate-first process, the high temperature of dopant activation will cause the EOT increasing, let a low performance. We will replace the traditional annealing to low-temperature microwave annealing with 2.45GHz and 5.8GHz to reduce EOT increasing and Al diffusion and we will fabricate the pMOSFETs with two different frequency MWA to reduce thermal budget caused in thermal process.
There are three parts in this paper, in the first part, for the dopant activation, there are two different frequency(2.45GHz and 5.8GHz) microwave annealing methods were compared. As the results of electrical measurement, we can observe the high activation level in Ge content samples by 2.45GHz MWA and in Si samples by 5.8GHz MWA, that shows the material-targeted annealing method to reduce the thermal budget of device.
In the second part, we will analysis the electrical characteristics of capacitors after dopant activation in gate-last process. And the results show the good EOT and suppress Al diffusion by 2.45GHz MWA in long annealing time.
In the final part, we fabricated the pMOSFETs with two different frequency MWA for dopant activation and post metallization annealing. By the material-targeted annealing method, the thermal budget can be reducing and the device has high performance.

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