在此研究中，我們成功的研製出奈米柱和奈米管，並非用催化劑成長，而是用電漿偶合(ICP)蝕刻的方式，且沒有使用微影技術。我們使用原子力顯微鏡和掃描表面電子顯微鏡加以確認，這些六角柱的奈米結構是在C軸上垂直於氮化鎵材料的基板上。而奈米柱的尺寸及密度和蝕刻的參數有很強的相關性，似乎隱含了這些一維奈米結構的形成和氮化鎵薄膜磊晶成長時形成的錯位密度無關。除此之外，在某些特定的蝕刻製程參數，我們發現外直徑是80nm、內直徑是40nm的奈米管，而它的密度為4.4x109/cm2，在此實驗中也運用了穿透式電子顯微鏡來觀察奈米管，發現可以製作出良好直壁式的奈米管垂直陣列。就我們所知這是第一次發現以蝕刻方式形成奈米管的結構，且製程具有再現性。
之後我們用導電探針原子力顯微鏡研究這些高密度及相對低密度奈米柱及奈米管試片的導電電流特性。發現這些一維奈米結構的氮化鎵在蝕刻的表面上有較強且穩定的導電電流，此一結果似乎也進一層暗示這些奈米柱和錯位密度的關聯性並不強。若再和氮化鎵的原始磊晶片比較導電特性，發現這些一維奈米結構的氮化鎵電阻值比原始磊晶片的氮化鎵電阻值小了大約兩個數量級。我們預期此結果將有助於奈米元件製作時的電性應用參數。
其次我們用計算和實驗的方式來檢測單根氮化鎵奈米管的力學強度特性，實驗是用壓縮力的方式，並引用了線性彈性殼層受力的理論。我們也探討了多種受力後可能的形變行為並用理論計算加以分析。除此之外，用長度500nm和長度300nm的奈米管做研究，也發現了彈性殼層不穩定性現象的存在。除此之外也將此單跟奈米管產生永久形變所需的能量加以計算，約為10-5 Erg。此結果將可預期有助於奈米元件封裝及製作時，了解元件的力學強度之參考。
最後我們選擇不同形狀，最小的直徑約50nm的一維結構，如島狀、柱狀、管狀和角狀，來做光學的檢測。發現這些一維奈米結構在蝕刻後的表面破壞會造成許多表面能態的產生，並觀察到施體受體對產生的現象，尤其是奈米管的結構更是在黃光螢光區(YL)有明顯增強的反應。由以上的一維奈米結構製程與其光機電特性研究結果顯示，其特性結果可應用到奈米壓印領域並預測產生永久形變之能量，除此之外也預期應用在電泳法檢測的領域裡面。

In this study, both of the GaN nanocolumns (nanorods) and hollow nanocolumns (nanotubes) were formed successfully by inductively coupled plasma (ICP) etching without lithography technique. It was found that the tops of these nanostructures were hexagonal with the c-axis perpendicular to substrate surface confirmed by atomic force microscope (AFM) and scanning electron microscope (SEM). The density of the GaN nanocolumns depends strongly on etching parameters that suggests that the formation of these GaN nanostructures was not related to the dislocation density in the original GaN epitaxial layers. With an Ar concentration of 42.86%, it was found that diameter of the whole nanocolumns was around 80 nm, the diameter of the nanocavities inside these nanocolumns was around 40 nm while the density of the nanocolumns was around 4.4x109 cm-2. To our knowledge, this is the first report regarding this kind of nanostructure.
These one dimensional nanostructures were investigate by using C-AFM. The results measured from both the high-density and relative low-density etched nanorods and nanotubes samples show enhanced current conduction at the edges of nanorods. This indicates that the off-axis planes situated at such locations are more electrically active than c-plane GaN. Again, the increased current conduction on the edges of GaN nanorods in different dimensions and density are most likely not associated with dislocations. The local current mapping of these nanorods samples show the maximum current value of 20 nA, corresponding to an effective tip–sample resistance of ～107 Ω, indicating that the value of measured currents on these nanorods samples were more than two orders of magnitude larger than that obtained in the as-grown film sample.
Calculating analysis and experimental observations of shell buckling in individual gallium nitride nanotube were taken by using nanoindentation. By using the experimental results of critical buckling strain under compression, the stiffness of nanotubes that were vertically aligned on a template were investigated by using linear elastic shell buckling theory. In addition, more studies of various possible nanomechanical behavior modes of gallium nitride nanotubes by shall model are provided. Experimental observations of uniaxial compression shell instabilities in the GaN nanotubes has also been reported. With both of these experimentally obtained values of critical buckling strain around 7.4 %-19.0 %, the experimentally obtained values of Young’s modulus for length of 500 nm and 300 nm are 483.9 GPa and 223.4 GPa, respectively. Furthermore, the buckling energy for the GaN nanotube of 500 nm and 300 nm in length was 2.43x10-5 Erg and 1.28x10-5 Erg, respectively.
Finally, the optical investigation of nanoscale structures of ICP-etched GaN islands, tips, tubes and cones as small as 50 nm in diameter were performed. Based on GaN near-band-edge luminescence analyses, substantial number of donor-related defects believably was introduced to the nanotubes sample as compared to the nanotips and nanocones samples. Photoluminescence mapping illustrated that defects induced by the ICP process predominantly situate near the facet’s surface of the nanostructures. The nanoislands formation as result of more optical absorption and etching introduced less number of defects. In particular, the nanotubes sample exhibits a conspicuous increased in yellow luminescence intensity compared to the other nanostructure samples.
The results of this study should be applicable in nanostamping and predictable in the buckling energy. They may open a new application possibility in one dimensional GaN nanostructures in electrophoresis detecting.

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