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研究生： 李治廷
Li, Zhi-Ting
論文名稱： 具氮化鎵功率元件高切換頻率雙向直流-直流轉換器之研製
Design and Implementation of High Switching Frequency Bidirectional DC-DC Converter with GaN Power Device
指導教授： 陳建富
Chen, Jiann-Fuh
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2021
畢業學年度： 109
語文別： 英文
論文頁數： 87
中文關鍵詞： 高切換頻率 、氮化鎵(GaN) 、雙向直流-直流轉換器
外文關鍵詞： High switching frequency, Gallium nitride (GaN), Bidirectional DC-DC converter
相關次數： 點閱：121  下載：0 
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    • 本論文原先由擴展工作週期交錯式降壓轉換器(IBC)改為交錯式雙向DC-DC 轉換器。此電路有緩衝電容，可以提高轉換比和降低功率開關的電壓應力，而交錯技術可以帶來更低電感電流漣波的優點。其轉換器的規格為200伏的匯流排電壓、24伏的電池電壓、500瓦額定功率和500 kHz切換頻率。
    後續卻發現已有發布了低頻相似轉換器架構，開關採用Si MOSFET。但隨著能源需求日益增長，縮小體積能帶來更大的優勢。因此本論文主要研究開關採用氮化鎵(GaN)寬能隙元件和高切換頻率，所帶來的較高功率密度和較高效率的優勢。
    最後，動作原理分析及參數設計後續皆會加以討論，並且透過軟體模擬和實作驗證其可行性。降壓模式最高效率可達94.01%，升壓模式最高效率可達89.75%。功率密度可達29.62W/in^3。

    In this thesis, the extended duty cycle interleaved buck converter (IBC) is changed to an interleaved bidirectional DC-DC converter. This topology has a buffer capacitor, which can improve the conversion ratio and reduce the voltage stress of the power switch. Interleaved technology can bring the advantage of lower inductor current ripple. The specifications of the converter are 200 volts bus voltage, 24 volts battery voltage, 500 watts of rated power and 500 kHz switching frequency.
    Later, it was discovered that a low-frequency similar converter topology had been released, and the switch used Si MOSFET. However, with the increasing energy demand, reducing the size can bring greater advantages. Therefore, this thesis mainly studies the advantages of higher power density and higher efficiency brought by the use of gallium nitride (GaN) wide band gap components and high switching frequency.
    Finally, the operation principle analysis and parameter design will be discussed. The feasibility is verified by simulation and experimental results. The highest efficiency in the step-down mode can reach 94.01%, and the highest efficiency in the step-up mode can reach 89.75%. The power density can reach 29.62W/in^3.

    摘要 I Abstract II Acknowledgement III Content IV List of Tables VII List of Figures VIII CHAPTER 1 INTRODUCTION 1 1.1 Background and Motivation 1 1.2 Thesis Outline 3 CHAPTER 2 REVIEW OF TOPOLOGIES AND GAN POWER DEVICE 4 2.1 Non-Isolated Converter 4 2.1.1 Buck Converter 4 2.1.2 Interleaved Buck Converter 6 2.1.3 Boost Converter 10 2.1.4 Summary 12 2.2 Bidirectional DC-DC Converter 13 2.2.1 Single-Phase Non-Isolated Half-Bridge BDC 13 2.2.2 Single-Phase Non-Isolated Buck-Boost BDC 14 2.2.3 Single-Phase Non-Isolated Buck-Boost Cascade BDC 15 2.2.4 Single-Phase Non-Isolated Cuk BDC 16 2.2.5 Single-Phase Non-Isolated SEPIC/Zeta BDC 17 2.2.6 Two-Phase Interleaved Non-Isolated Half-Bridge BDC 18 2.2.7 Summary 20 2.3 GaN High Electron Mobility Transistors(E-HEMT) 21 2.3.1 GaN E-HEMTs 21 2.3.2 Eon/Eoff Switching Loss of GaN 27 2.3.3 Summary 28 CHAPTER 3 ANALYSIS OF CONVERTER 29 3.1 Structure of Circuit 29 3.2 Operating Principle 32 3.3 Step-Down Operation Mode 33 3.4 Step-Up Operation Mode 40 CHAPTER 4 PARAMETERS DESIGN AND ANALYSIS 46 4.1 Step-Down DC Conversion Ratio 46 4.2 Step-Up DC Conversion Ratio 49 4.3 Inductor Current Ripple Design 50 4.3.1 Step-Down Inductor Current Ripple 50 4.3.2 Step-Up Inductor Current Ripple 51 4.4 Step-Down and Step-Up Inductor Design 51 4.5 Buffer Capacitor Ripple 52 4.6 Capacitor Ripple 53 4.7 Stress and Loss Analysis 55 4.7.1 Stress and Loss Analysis of Step-Down Mode 55 4.7.2 Stress and Loss Analysis of Step-Up Mode 56 4.8 The Gate Driver 57 CHAPTER 5 SIMULATION AND EXPERIMENTAL RESULTS DISCUSSIONS 59 5.1 Simulation 59 5.1.1 Step-Down Simulation 60 5.1.2 Step-Up Simulation 64 5.2 Experimental Waveforms 68 5.2.1 Step-Down Experimental Waveforms 68 5.2.2 Step-Up Experimental Waveforms 72 5.3 Power Density 76 5.4 Efficiency 78 5.4.1 Step-Down Efficiency 78 5.4.2 Step-Up Efficiency 80 CHAPTER 6 CONCLUSIONS AND FUTURE WORKS 82 6.1 Conclusions 82 6.2 Future Works 83 REFERENCES 84

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