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研究生： 羅睿永
Lo, Jui-Yung
論文名稱： 915MHz微波電漿化學氣相沉積大面積鑽石薄膜及其特性
Deposition and Characterization of Large-area Diamond films by 915MHz Microwave Plasma Enhanced Chemical Vapor Deposition
指導教授： 曾永華
Tzeng, Yon-Hua
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2012
畢業學年度： 100
語文別： 中文
論文頁數： 96
中文關鍵詞： 微波電漿化學氣相沉積 、大面積沉積 、超奈米鑽石薄膜 、微米鑽石薄膜
外文關鍵詞： MPCVD, large area deposition, UNCD, MCD
相關次數： 點閱：182  下載：14 
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    • 鑽石具備有許多優異的性質，如高硬度、高熱傳導率、耐腐蝕、抗輻射、化學惰性等性質，可以應用在光電元件、生物科技、機械、航空等領域；而在本研究中，為了要在矽基板上沉積鑽石薄膜，在較高溫度與壓力的環境之下，利用微波電漿化學氣相沉積的方式來進行鍍膜。在實驗當中使用甲烷(0.3 - 0.4 sccm)、氫氣(0 - 2 sccm)及氬氣(85 sccm)的混合氣體作為沉積超奈米鑽石薄膜的氣源，此薄膜會較沒有加入氫氣的超奈米鑽石薄膜更為平坦，其表面粗糙度直達10 nm左右，而電阻率也會達到109 - 1010 ohm*cm，接著利用甲烷(0.5 - 1 sccm)及氫氣(99 sccm)的氣體混合作為中間層薄膜的氣源，沉積出較大晶粒的微米鑽石薄膜，故依上述參數製作出微米/超奈米鑽石薄膜之結構，以達到較沉積於矽基板更緻密之微米鑽石薄膜，可避免微米鑽石薄膜之缺陷(pinhole)會造成漏電和降低電阻率，且微米鑽石薄膜本身是以富含氫氣之電漿而沉積成鑽石薄膜，因此會造成表面氫處理，而增加導電特性，故在附加超奈米鑽石薄膜來包覆住微米鑽石薄膜，並以富含氬氣之電漿與高溫之製程，對表面作除去氫鍵之功效，以達到微米鑽石薄膜具有高電阻、低漏電之特性。

    Diamond has many unique properties such as the hardest natural material, high thermal conductivity, anti-corrosion, resistant against radiation and chemical inactive reaction. It has wide applications in photoelectric device, bio-technology, mechanics, and aviation engineering. Diamond films were deposited using the microwave plasma chemical vapor deposition (MPCVD) technique on silicon substrate. Hydrogen gas of various flow rates (0 - 2 sccm) was added to the gas mixture of methane (0.3 – 0.4 sccm) and Argon (85 sccm) for diamond deposition. UNCD films with hydrogen display flatter surface then without hydrogen, with a roughness of approximately 10 nm. The resistivity of UNCD films is 109 - 1010 ohm-cm. MCD films are deposited using methane (0.5 - 1 sccm) and hydrogen (99 sccm) gas mixture. We first deposit a compact UNCD film on a silicon substrated seeded with diamond nanoparticles. This layer is to avoid pinholes in the subsequent deposition of MCD films. After deposition of MCD on UNCD, we deposit the top-layer UNCD film using Argon-rich plasma to remove hydrogen in MCD and encapsulate the multi-layer diamond film so as to maintain its high resistivity while allowing MCD as part of the diamond film. MCD has a higher thermal conductivity than UNCD due to its much larger grain sizes and lower density of grain boundaries. The composite film provides both high electrical resistivity and a better thermal conductivity than UNCD alone of the same total thickness.

    考試合格證明 i 摘要 ii Abstract iii 誌謝 iv 目錄 I 表目錄 IV 圖目錄 V 介紹（Introduction） 第1章： 介紹鑽石薄膜 01-27 1.1 概論 01 1.2 結構、特性及應用 04 1.2.1 鑽石之晶體結構 04 1.2.2 特性與應用 06 1.2.3 研究目標 11 1.3 鑽石製程機制—化學氣相沉積法 12 1.3.1 熱鎢絲化學氣相沉積（HFCVD） 15 1.3.2 直流電漿化學氣相沉積（DC-PECVD） 17 1.3.3 微波電漿化學氣相沉積（MPECVD） 18 1.3.4 小結 19 1.4 表面預處理機制—鑽石播種法 21 1.4.1 鑽石懸浮液經超音波震洗方式 21 1.4.2 鑽石晶種經偏壓成核方式 23 1.4.3 小結 27 第2章： 各種晶粒之鑽石薄膜 28-37 2.1 微米微晶鑽石薄膜 28 2.2 奈米微晶鑽石薄膜 30 2.3 超奈米微晶鑽石薄膜 34 2.4 小結 36 實驗內容（Experimental details） 第3章： 實驗製程與分析 38-56 3.1 製程機台介紹 38 3.1.1 超音波震洗機（Ultrasonic　machine） 38 3.1.2 微波電漿化學氣相沉積（MPCVD） 39 3.1.3 塗佈機（Spin-coater） 40 3.1.4 曝光機（Aligner） 41 3.1.5 濺鍍系統（Sputter） 42 3.2 量測機台介紹 43 3.2.1 光放射光譜儀（OES） 43 3.2.2 拉曼光譜儀（Raman） 44 3.2.3 原子力顯微鏡（AFM） 46 3.2.4 掃描式電子束顯微鏡（SEM） 47 3.2.5 電性量測（I-V measurement） 50 3.3 實驗步驟 51 3.3.1 試片預處理 51 3.3.2 鑽石薄膜沉積 52 3.3.3 電極製作 57 3.3.4 量測與分析 59 結果與討論（Results and Discussion） 第4章： 實驗數據與結果 60-87 4.1 改變晶粒尺寸 60 4.2 改變電極尺寸 83 結論（Conclusions） 第5章： 總結與未來展望 88 5.1 總結 88 5.2 未來展望 88 參考文獻 89

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