本研究是利用物理方式成長大面積的石墨烯，不同於以往的文獻研究，大多利用化學氣相沉積法。首先將石墨均勻濺鍍在二氧化矽基板上，隨即濺鍍鎳金屬在石墨上，沉積厚度由可控制濺鍍速率在0.1埃/秒之膜厚機得知，形成了三明治夾層結構。隨著退火過程，碳原子在高溫下擴散到鎳金屬內，並在降溫的時候析出表面形成石墨烯。
石墨烯經過蝕刻轉移至SiO2基板上，經由拉曼光譜儀判斷石墨烯的性質，並利用Probe Station探針測量薄膜電性、掃描式電子顯微鏡(SEM)觀察試片表面狀況及其掃描穿透式電子偵測器(STEM)同時觀察石墨烯薄膜穿透及表面狀況、穿透式電子顯微鏡(TEM)觀察繞射圖案 (Diffraction Pattern; DP)等等。
我們已經成功利用很簡單的製程製造出石墨烯，得知Ni (300 nm)/C (3 nm)/SiO2經過退火溫度950℃下持溫時間為15分鐘獲得的石墨烯(GJ)為最佳參數及2D/G及D/G的比值分別為1.04和0.052，而且我們的製程下降退火溫度到800℃短時間持溫1分鐘亦可以析出出石墨烯。

In this research, large-area graphene is grown by solid state reactions, distinctly different from conventional chemical vapor deposition. In the first step, carbon is sputtered uniformly on a nickel thin film, with precise thickness control at the sputtering rate of 0.1 angstrom/sec. Subsequently, carbon is dissolved into nickel under high temperature annealing and graphene is formed on surface through precipitation during cooling, where the number of atomic layers of graphene can be controlled by annealing temperature between 800℃ and 950℃. The number of graphene layers is confirmed by Raman spectroscopy; electrical properties by Probe Station; and microstructure by Scanning electron microscopy and transmission electron microscopy. The sheet resistance is measured by transferring graphene onto a SiO2 substrate patterned with electrodes. The relationship between experimental parameters and the number of graphene layers is discussed, including the thickness and microstructure of the carbon and nickel films, annealing temperature, etc. The domain size is calculated by Raman characteristic peaks, as well as directly measured by transmission electron microscopy. Finally, we have succeeded in producing high quality graphene by using a facile process, and learned that the Ni (300 nm) / C (3 nm) / SiO2 annealed at 950℃ for 15 minutes as the best parameters for the resulting 2D / G and D / G intensity ratios of 1.04 and 0.052, respectively. Besides, we also demonstrate graphene can be formed at the lowest temperature of 800℃ for short-term holding of one minute.

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