在本研究中，採用的是過飽和再結晶法來合成CsPbBr3鈣鈦礦量子點溶液，實驗過程中在室溫下進行，不需要惰性氣體的保護與注入的操作，雖然是在室溫下進行合成，CsPbBr3量子點仍擁有優異的光激發螢光與吸收光特性，光激發螢光的波峰位於515奈米處，和所對應的光吸收峰相吻合，量子點晶體結構為奈米立方體。用旋轉塗佈的方式，在n型基板與長有70-80奈米厚的二氧化矽n+型基板上，形成量子點薄膜，分別用來製作光感測器與光電晶體。光電晶體的臨限電壓(Threshold Voltage)為 ‒10.25伏，光感測器與光電晶體的參數分別為：開關比57、100；最大光電流70 nA、36 nA；光響應度"5.6×" 〖"10" 〗^"‒7" "(A / W)" 、"7.2×" 〖"10" 〗^"‒6" "(A / W)" ；光靈敏度50.00 (jones)、46.14(jones)；外部量子效率"1.96×" 〖"10" 〗^"‒4" "%" 、"2.52×" 〖"10" 〗^"‒3" "%" 。量測時使用的雷射光波長為355奈米。

The supersaturated recrystallization (SR) method which is conducted in room temperature (RT), free from the inert gas protection and injection, is chosen to synthesize the CsPbBr3 perovskite quantum dots (QDs). Although synthesized in RT, CsPbBr3 QDs have superior photoluminescence (PL) and absorption properties. It’s PL peak centered at 515 nm which is consistent with the absorption peak. The morphology of CsPbBr3 QDs was nanocubes. CsPbBr3 QD film is spun coated on n-silicon (without SiO2 layer) and n+-silicon coated with a 70-80 nm-thick SiO2 layer for fabricating photodetector and phototransistor, respectively. The threshold voltage of phototransistor is approximately ‒10.25 V. The on/off ratio, the highest photo current, photoresponsivity, detectivity and external quantum efficiency for photodetector/phototransistor are respectively found as 57 / 100, "5.6×" 〖"10" 〗^"‒7" "(A / W)" / "7.2×" 〖"10" 〗^"‒6" "(A / W)" , 50.00(jones) / 46.14(jones) and "1.96×" 〖"10" 〗^"‒4" "%" / "2.52×" 〖"10" 〗^"‒3" "%" . The laser wavelength used during the measurements was 355 nm.

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