本研究利用射頻磁控濺鍍法製備非晶Y2Ti2O7薄膜應用於電阻式隨機存取記憶體(Resistive-Random Access Memory, RRAM)元件，並探討其電阻轉換(Resistive Switching, RS)特性及進行阻抗分析，且著重研究薄膜厚度、上電極、沉積氣氛Ar/O2比、及退火溫度對RRAM元件性能的影響，所有樣品皆可展現出雙極電阻轉換行為，元件在低阻態電流傳導遵守歐姆導通機制，在高阻態遵守空間電荷限制電流傳導。進行金屬後退火處理能增強AlOx介面層的形成並改善電阻轉換特性，AlOx介面層能幫助防止氧離子通過界面向外擴散，本研究中製備的金屬後退火300℃元件開關次數可達2491次，且具有低的Set和Reset電壓分別為–1.5 V及0.88 V，與可辨認的記憶窗口其阻值開關比可大於10。

The RRAM (Resistive Random-Access Memory) device structure prepared in this study consists of a metal-insulator-metal (MIM) configuration. The insulating layer is composed of amorphous Y2Ti2O7 thin films deposited by radio frequency sputtering. With ITO (Indium Tin Oxide) as the bottom electrode of the device, it can serve as the oxygen ion reservoir. In this experiment, different preparation conditions will be varied to deposit Y2Ti2O7 thin films in order to investigate their impact on the RRAM device characteristics, such as film thickness, top electrode material (Aluminum or Titanium), deposition atmosphere ratio of Ar/O2, annealing temperature, and post-metallization annealing treatment. The Al/Y2Ti2O7 (35min_PMA.300℃)/ITO device with the most favorable resistive switching characteristics in this study is fabricated under a pure Ar atmosphere. It possesses an appropriate concentration of oxygen vacancies, allowing the formation of conductive filaments. Additionally, the post-metallization annealing treatment results in the formation of a thicker AlOx interfacial layer, serving as the oxygen ion reservoir. This device exhibits a high endurance of 2491 resistive switching cycles and demonstrates low set and reset voltages of -1.5 V and 0.88 V, respectively. It also shows a recognizable memory window with a resistance ON/OFF ratio exceeding 10. The data retention time of the device reaches 104 seconds at 85°C, indicating its potential application in non-volatile memory devices.

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