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研究生：	鄭安修 Cheng, An-Hsiu
論文名稱：	以UV-Ozone處理溶液式製程之鈦酸鋇薄膜及其應用於氧化銦鎵鋅薄膜電晶體介電層之探討 Investigations of Solution-Processed BaTiO3 Thin Films with UV-Ozone Treatment and Its Applications as the Dielectric Layers of Indium Gallium Zinc Oxide Thin Film Transistors
指導教授：	朱聖緣 Chu, Sheng-Yuan
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2015
畢業學年度：	103
語文別：	英文
論文頁數：	66
中文關鍵詞：	薄膜電晶體、閘極介電層、鈦酸鋇、溶膠凝膠法、低溫、UV-ozone
外文關鍵詞：	TFT, gate dielectric, BaTiO3, sol-gel, low temperature, UV-ozone
相關次數：	點閱：114 下載：7
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近年來光電產業蓬勃發展，而在主動式陣列有機發光二極體（AMOLED）面板的發展過程中，薄膜電晶體（TFT）技術顯得額外重要。非晶氧化物半導體(AOSs)像是氧化銦鎵鋅，對於作為TFT通道層是極具潛力的材料。除了改善TFT通道層的半導體材料之外，另一個可供選擇的方式在於採用高介電常數（high-k）材料作為閘極介電層，藉此獲得高電容以及低漏電流。在現有被廣泛應用的介電材料之外，尋找更適用於TFT上的材料也是值得探討的議題。鈦酸鋇（BTO）為鈣鈦礦結構之氧化物，可作為鐵電材料，亦曾在非高溫製程下應用於有機薄膜電晶體（OTFT）的介電層，然而BTO薄膜應用在非晶氧化物半導體TFT的探討卻十分罕見。
本論文採用溶膠凝膠法（sol-gel）以不同的UV-ozone照射時間以低溫製備BTO薄膜。在本論文的第一部分，詳細探討BTO薄膜的材料及電特性；在本論文的第二部分，則將以UV-ozone處理後的BTO薄膜作為IGZO-TFT的介電層，並檢視元件的電性以及在偏壓或照光情形下的穩定度。以UV-ozone處理後的BTO/IGZO-TFT呈現開關電流比為1.66 × 107、飽和載子遷移率為0.29 cm2/Vs，以及接近理論最小值的次臨界擺幅0.069 V/dec．

In recent years, the optoelectronics industry has been well developed. Thin film transistors (TFTs) are particularly important in the development of active-matrix organic light-emitting diode (AM-OLED) displays. Amorphous oxide semiconductors (AOSs), such as indium gallium zinc oxide (IGZO), have emerged as potential materials as channel of TFTs. Instead of improving the electrical characteristics of the channel layer of TFTs, an alternative way is to use high dielectric-constant (high-k) materials as the gate dielectrics for high capacitance and low leakage current. Besides the conventional dielectrics, finding a more suitable material for TFTs is also a critical issue to be investigated. BaTiO3 (BTO), an oxide with a perovskite structure that could be used as ferroelectric materials, has ever applied for dielectric layer of organic thin film transistors (OTFTs) and exhibits good insulator property without high process temperature. Nevertheless, BTO films applied for AOS-TFTs have rarely been investigated.
In this study, sol-gel method is used to fabricate BTO thin films with different UV-ozone illumination time at low-temperature process. In the first part of this thesis, the detailed investigation of BTO thin films, including material and electrical characteristics is presented. In the second part of this thesis, the proposed BTO thin films after suitable UV-ozone treatment are applied for the dielectric layers of IGZO-TFTs. The electrical characteristic and stability test of the devices via bias or illumination are also examined. With UV-ozone treatment, BTO/IGZO-TFTs show an on/off current ratio of 1.66 × 107, a saturation mobility of 0.29 cm2/Vs, and an subthreshold swing of 0.069 V/dec closed to the theoretical minimum value.

Table of Contents
Abstract………...……………………………………………………………..I
摘要……………..…………………………………………………………...II
誌謝………………………………………………………………………... III
Table of Contents………………………………………………………….....V
List of Tables……………………………………………………………….VII
List of Figures……………………………………………………………..VIII
Chapter 1 Introduction……………………………………………………..1
	1.1	Background.………………………………………………………....1
	1.2	Motivation……………………………………………………........ .. 2
	1.3	Organization of Thesis………………………………………….........3
Chapter 2 Theory and Literature Review…………………………………4
	2.1	Overview of Thin Film Transistors…………………………………..4
	2.2	Basic Operation of Thin Film Transistors……………………………7
	2.3	Barium Titanate Materials………………………………………….13
	2.4	Introduction to Sol-Gel Method…………………………………….14
Chapter 3 Experiments and Measurement Techniques………………….18
	3.1	Experimental Methods…………………………………………...... 18
		3.1.1	BTO Thin Films Fabrication Process and Measurement…..18
		3.1.2	BTO/IGZO-TFTs Fabrication Process and Measurement....20
	3.2	Characterization for Materials and Devices………………….……..21
		3.2.1	Alpha Step………………………………………………....21
		3.2.2	Thermal Gravimetric Analysis………………………….....21
		3.2.3	UV Transmittance and Absorption………………………...22
		3.2.4	X-ray Diffraction (XRD) Spectroscopy………………..…..23
		3.2.5	Scanning Electron Microscope (SEM)………………….....23
		3.2.6	Atomic Force Microscope (AFM)…………………………24
		3.2.7	Contact Angle Measurement………………………………25
		3.2.8	X-ray Photoelectron Spectroscopy (XPS)…………………26
		3.2.9	Capacitance – Voltage (C-V) Measurement……………….27
		3.2.10	Current – Voltage (I-V) Measurement………………..........27
		3.2.11	TFT Characteristics Measurement………………………...28
Chapter 4 Results and Discussions………………………………………..29
	4.1	Material and Electrical Characteristics of BTO Thin Films……...... 29
		4.1.1	Investigation of BTO Precursor Solution………….………29
		4.1.2	Analysis of BTO Crystallinity…………………….....….....30
		4.1.3	Morphology of BTO Thin Films……………………..…....31
		4.1.4	Optical Properties of BTO Thin Films…………………….36
		4.1.5	C-V Measurement…………………………………………38
		4.1.6	J-E Measurement…………………………………………..40
		4.1.7	Chemical Composition of BTO Thin Films……………….41
		4.1.8	Summary…………………………………………………..49
	4.2	BTO Dielectric Layer Applied for IGZO-TFTs…………………….50
		4.2.1	TFT’s Characteristics……………………………………...50
		4.2.2	Stability Test…………………………………………….... 52
Chapter 5 Conclusions and Suggestions………………………………….58
	5.1	Conclusion………………………………………………………….58
	5.2	Future Work………………………………………………………...59
Reference…………………………………………………………………...60

List of Tables
Table 2.1	Comparison between oxide semiconductor TFTs and the other available technologies………………………………………………………..……6
Table 4.1	Surface tension components of test liquids………………………….…35
Table 4.2	Contact angle data of BTO films with different UV-ozone illumination time………………………………………….…………………………36
Table 4.3	Dielectric constant of BTO with different UV-ozone illumination time at 1 MHz and 5 kHz, respectively……………….…………………….….40
Table 4.4	On-current and off-current of IGZO-TFTs with BTO layers treated at different UV-ozone illumination time………………….………………52
Table 4.5	Electrical properties of IGZO-TFTs with BTO layers treated at different UV-ozone illumination time…………………………………………...52

Lists of Figures
Fig. 2.1	Schematic cross-sectional views of TFTs: (a) adapted from Lilienfild, (b) Weimer, and (c) Spear and Lecomber. ………………………………….5
Fig. 2.2	Comparison of single-crystal silicon, a-Si:H, and poly-silicon structure..5
Fig. 2.3	Comparison the orbital structure between Si and metal oxide semiconductors. …………………………………...…………….……..7
Fig. 2.4	(a) The basic structure of a TFT and the corresponding energy band diagram as viewed through the gate for several condition (b) equilibrium, (c) VGS <0 and (d) VGS >0. ……...………………………………………8
Fig. 2.5	The operation of the TFT device. ……………………………………...10
Fig. 2.6	Typical (a) output and (b) transfer characteristic of an n-type oxide TFT. …………………………….……………………………………..12
Fig. 2.7	Cubic perovskite-type structure ABO3. ……………………………….13
Fig. 2.8	The process of the sol-gel method. ……………………………….……16
Fig. 2.9	The process of spin-coating. ………………………………….……….17
Fig. 3.1	Fabrication process and MIS structure of BTO. ……………………….19
Fig. 3.2	Measurement of the material and electrical properties of BTO thin films…………………………………………………………………...20
Fig. 3.3	Fabrication process, measurement and structure of BTO/IGZO-TFTs...21
Fig. 3.4	UV transmittance and absorption measurement system.………………23
Fig. 3.5	Scanning electron microscopy measurement system. ………………...24
Fig. 3.6	Atomic force microscope. …………………………………………….25
Fig. 3.7	Contact angle system. …………………………………………….…...26
Fig. 3.8	X-ray photoelectron spectroscopy. ……………………………………27
Fig. 3.9	Semiconductor parameter analyzer (Agilent 4155C). ………………....28
Fig. 4.1	TGA data of BTO precursor solution. ………………………………....29
Fig. 4.2	UV-visible absorption spectra of BTO precursor solution. …………....30
Fig. 4.3	XRD patterns of BTO films with different UV-ozone illumination time........................................................................................................31
Fig. 4.4	SEM images of BTO films with different UV-ozone illumination time: (a) 0 min (b) 90 min (c) 120 min (d) 150 min (e) 180 min......................32
Fig. 4.5	AFM images of BTO films with different UV-ozone illumination time: (a) 0 min (b) 90 min (c) 120 min (d) 150 min (e) 180 min.…….……..33
Fig. 4.6	Rms value of BTO films as a function of UV-ozone illumination time...34
Fig. 4.7	Surface energy (γ_S) of BTO thin films with different UV-ozone illumination time…..…………………………………………………..36
Fig. 4.8	Optical transmittance of BTO thin films with different UV-ozone illumination time.……………….……………………………………..37
Fig. 4.9	The variation of (αhν)^2 versus photon energy hν for BTO thin films with different UV-ozone illumination time. (The band gap energy is deduced from extrapolation of the straight line to (αhν)^2=0.)……....38
Fig. 4.10	Capacitance versus bias voltage (C-V) at frequency (a) 1 MHz (b) 5 kHz for Al/BTO/Si structure with different UV-ozone illumination time…..39
Fig. 4.11	Leakage current density versus applied electric field (J−E) for Al/BTO/Si structure with different UV-ozone illumination time. …………………41
Fig. 4.12	XPS spectra of: (a) C-1s, (b) Ba-3d5/2, (c) Ti-2p3/2 and Ti-2p1/2, and (d) O-1s core levels as function of UV-ozone illumination time.……….…45
Fig. 4.13	Atomic concentration percentage of Ba, Ti, O and C in BTO thin films with different UV-ozone illumination time...…………………………..46
Fig. 4.14	Ti/Ba ratio and leakage current density at E = 0 as a function of UV-ozone illumination time………………………………………….46
Fig. 4.15	XPS spectra of O-1s core levels of different UV-ozone illumination time: (a) 0 min, (b) 90min, (c) 120 min, (d) 150 min, (e) 180 min…..………..49
Fig. 4.16	Transfer characteristics (VG vs ID) of IGZO-TFTs with BTO layers treated at different UV-ozone illumination time, at VD =10 V.………...51
Fig. 4.17	Transfer characteristics of BTO/IGZO-TFTs under PBS: (a) device_0, (b) device_150.……………………………………………………….…...55
Fig. 4.18	Transfer characteristics of BTO/IGZO-TFTs under NBS: (a) device_0, (b) device_150.…………………………………………….………….56
Fig. 4.19	Transfer characteristics of BTO/IGZO-TFTs under NBIS: (a) device_0, (b) device_150.………………………………………………………..57

                                    

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