| 研究生: |
陳俊欽 Chen, Chun-Chin |
|---|---|
| 論文名稱: |
類鑽碳奈米複合薄膜之研究 The Study of Diamond-like Nanocomposite Films |
| 指導教授: |
洪昭南
Hong, Chau-Nan Franklin |
| 學位類別: |
博士 Doctor |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2005 |
| 畢業學年度: | 93 |
| 語文別: | 中文 |
| 論文頁數: | 200 |
| 中文關鍵詞: | 類鑽碳 、奈米複合膜 |
| 外文關鍵詞: | DLC, nanocomposite |
| 相關次數: | 點閱:58 下載:3 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文分兩部分,第一部份研究類鑽碳奈米複合膜的製備,及其機械性質。第二部分則是對類鑽碳的其他應用做研究,我們分別將類鑽碳應用於液晶顯示器的配向膜;以及在electrowetting上的應用。
類鑽碳具有絕佳的物理及化學特性,因此可應用於模具、光學元件與生醫材料等方面。本研究主要是針對傳統的類鑽碳薄膜在應用上所具有的缺點來進行改良,因類鑽碳薄膜成長機構中是藉由離子能量的大小來決定膜的鍵結結構,進而影響膜的性質。欲沈積硬度較高的類鑽碳膜,必須要較高的離子能量來撞擊沈積,因此造成膜中殘餘極高之壓縮應力,附著力因而下降。
本研究以奈米複合類鑽碳來進行改良。我們分別以PECVD的鍍膜方式,以Hexamethylsiloxane,HMDSO為改質的反應物質,成長SiO2/DLC奈米複合膜, SiO2奈米粒子粒徑大小約5-10 nm。,其應力比純CH4及純HMDSO低,此奈米複合類鑽碳膜顯示其絕佳的機械特性:在硬度沒有下降很多的情形下,應力大幅下降(最低為0.8GPa),而且在鋼材上有不錯的附著力,臨界荷重大於儀器量測上限,50N;以ICP plasma-enhanced chemical vapor deposition (PECVD)高密度電漿系統複合PVD sputtering的鍍膜系統鍍Cr中間層及界面混合層,我們可以藉由調整濺鍍槍電流,來調整轟擊基板Ar/Cr離子比,配合適當的基板偏壓(大於-700V),及基板溫度(500℃),可使Cr與基板界面形成混合層(intermixing layer)。鍍膜時若鍍膜條件可形成界面混合層,附著力將大大的提升,達HF1;以PECVD複合Sputtering(PVD) 的實驗裝置,以銅(Cu)為濺鍍槍的靶材,C2H2為類鑽碳膜的碳源,成長Cu奈米粒子的類鑽碳奈米複合膜,其粒徑大小約15-30 nm,因銅和碳沒有鍵結,因此nanoparticle與碳的matrix沒有鍵結,藉由grain-matrix interface sliding的效應,可增加類鑽碳膜的韌性,該類鑽碳奈米複和膜的附著力因應力的下降及韌性的提升,其臨界荷重從純類鑽碳的66N上升到80N;以PECVD的鍍膜方式,以Tetraisoproxide titanium,TTIP為改質的反應物質,成長TiO2/DLC奈米複合膜,此奈米粒子為Rutile結構,其粒徑大小約10-20 nm,此奈米複合類鑽碳膜的機械特性沒有HMDSO系統好。硬度下降很多,但應力下降的更低,(最低為0.29GPa),純的TTIP在鋼材上有不錯的附著力,臨界荷重大於儀器量測上限,50N,。
本研究的第二部份則是類鑽碳膜的其他應用:類鑽碳膜於液晶顯示器配向膜上的應用,以PECVD的方式成長DLC,藉由改變碳源及RF功率,改變DLC膜中sp2/sp3比例,可以成長出光穿透度大於90﹪,具有良好液晶配向特性的類鑽碳膜;類鑽碳膜於electrowetting上的應用,我們可以加電場可以改變其表面能,利用此物理現象,驅動液體,使他流動或改變形狀,以真空鍍膜的方式鍍介電常數較Teflon高的類鑽碳薄膜,可以有效降低驅動電壓,增加其實用性
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