我的碩士論文提出一種新穎簡單製程方式-鎳金屬催化，此種製程主要機制是在於增加位能障並減低暗電流的電流值。實驗開始之初，我們利用熱蒸鍍機將鎳金屬在氮化鎵基板上鍍上10奈米的厚度，完成金屬膜製備後，再將元件使用不同回火氣體、溫度、時間的爐管回火製程探討。在回火製程後，我們利用原子力顯微鏡圖像發現元件回火完後，在金屬與半導體間的介面會變得很粗糙，並且在二次離子質譜儀圖像裡發現：元件回火完後，鎳、氧元素穿隧進入氮化鎵層裡，而我們猜測二者元素會形成化合物鍵結；而在電子能譜儀的分析裡，我們可以確定鎳-氧鍵結的配位數為Ni2O3。此外，我們還去量測計算出元件在未經過處理與最佳化條件(600℃、O2)處理後的蕭特基位障高度分別為：0.69eV和1.008eV；而同種方法計算下的理想因子分別為1.82 and 1.26。接著，元件在響應拒次比的項目上，由104 (未經處理) 提升至12149 (最佳化條件處理)。最後，將元件所量測得到的雜訊電流值去做換算，並定義出雜訊等效功率值，此值由9.95×10^-8(W) (未經處理) 降至1.74×10^-11(W) (最佳化條件處理)；而另一項也經由換算出來的標準化偵測能力定義值則由1.59×10^7 cm Hz0.5W-1提升至9.07×10^10cm Hz0.5W-1。

My thesis has demonstrated a new manufacturing process-Ni treatment, which can increase the barrier height between the metal and semiconductor and get lower dark current value. At the beginning in our experiment, we evaporate Ni 10nm onto the GaN epitaxial layers and put them in conventional furnace annealing for different annealing temperatures, annealing ambiances and annealing times. After the annealing process, we obtain the rougher surfaces of devices by AFM, besides we find the Ni and O penetrating into the GaN epitaxial layers and we guess they formed a compound material after annealing in SIMS analysis. From the XPS analysis, we can make a conclusion that the Ni-O compound is Ni2O3. In addition, we calculate the ΦBE between the as-grown sample and Ni-treatment at 600 ℃, O2 ambient are 0.69eV and 1.008eV, at the same time, the ideality factor (n) are 1.82 and 1.26, respectively. Furthermore, the rejection contrast is ascended from 104 (without Ni treatment) to 12149 (with Ni treatment at 600 ℃). Finally, in the -2 applied voltage, we discovery the NEP calculated from noise current value between the as-growns and Ni-treatments are 9.95×10^-8(W) and 1.74×10^-11(W). In the same concepts, the D* are 1.59×10^7 cm Hz0.5W-1 and 9.07×10^10 cm Hz0.5W-1, respectively.
Most important of all, we can use simple Ni treatment manufacturing process to enhance the performances of devices, so we cannot overemphasize the deeply development and importance of Ni treatment process.

Chapter 1
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