在此篇論文中主要介紹兩大部分，第一部份將介紹低損耗(Q＞5,000)的介電材料，並探討其不同比例下之微波介電特性；第二部份將介紹其在被動元件之應用，並實作於不同基板上探討元件尺寸的改善。
　　第一部份首先要介紹MgZnNb4O12、MgZnTa4O12陶瓷系統之微波介電特性。並使用與Nb5+相同離子半徑的Ta5+來取代Nb5+位置，形成MgZn(Nb1-xTax)4O12 (x = 0–1)固溶體，研究其材料特性及微波介電性質。由實驗中可得知MgZn(Nb0.2Ta0.8)4O12在1390°C燒結4小時可得到最佳之介電特性 ~ 35.1，Q׃~ 56,000 GHz (at 8.15 GHz)，τf ~ –4.6 ppm/°C。
　　第二部份我們設計及實作一操作在2.45 GHz的微帶線帶通濾波器，濾波器主要採用一環形雙模態濾波器做為主體，其雙模態能在通帶兩側產生傳輸零點，並在饋入端加入一Open-stub來抑制倍頻寄生響應。最後，我們將此電路實作在FR4、氧化鋁和MgZn(Nb0.2Ta0.8)4O12基板上，並量測其頻率響應。由量測的結果可得知，利用高介電係數及低損耗的材料做為電路基板時，確實能達到提升效能和縮小面積的需求。

　　There are two main subjects in this thesis. First, we will introduce the low loss dielectric material (Q＞5,000), and try to discuss the microwave dielectric properties with different ratio. Second, there will be a discussion of passive components and improvement of circuit size in different substrates.
　　First, the microwave dielectric properties of MgZnNb4O12、MgZnTa4O12 ceramic system have been investigated. Then use the same ionic radius of Ta5+ substitute Nb5+ from the MgZn(Nb1-xTax)4O12 (x = 0–1) solid solutions. The experiment results show that MgZn(Nb0.2Ta0.8)4O12 ceramics has the best properties at sintering temperature 1390°C for 4 hours, which could reach the best dielectric properties ~ 35.1, Q×f ~ 56,000 (at 8.15 GHz) and τf ~ –4.6 ppm/°C.
　　Second, we design and fabricate a microstrip band-pass filter which resonator at 2.45 GHz. The filter was constructed by dual-mode microstrip rectangular ring bandpass filter. The transmission zeros on both sides of passband were designed by dual-mode. Finally, an open-stub was added to suppress the spurious response. The pattern was printed on FR4, Al2O3 and MgZn(Nb0.2Ta0.8)4O12 substrates. The frequency response of measurement results, using the substrates of high dielectric constant and low loss, which can improve the performance and reduce filter’s size.

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