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研究生： 龍豪恩
Alonso, Joel
論文名稱： 氮化鎵功率元件並聯之雜散特性研究
A Study of Parasitic Characteristics on Paralleled GaN HEMTs
指導教授： 謝旻甫
Hsieh, Min-fu
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2025
畢業學年度： 113
語文別： 英文
論文頁數： 145
中文關鍵詞： 氮化鎵功率元件 、寄生參數 、元件並聯
外文關鍵詞： Gallium Nitride Power Transistor, Parasitic Components, Paralleled Devices
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    • Summary 1 Acknowledgements 3 Table of Contents 5 List of Tables 7 List of Figures 8 List of Symbols 14 Chapter 1. Introduction 17 1.1 Background 17 1.2 Literature Review 21 1.2.1 GaN HEMTs in Power Electronics 21 1.2.2 Increasing Current Capability by Paralleling GaN HEMTs 23 1.2.3 Parasitic Influence When Paralleling GaN HEMTs 25 1.2.4 Summary 27 1.3 Research Motivation and Purpose 28 1.4 Thesis Structure 29 Chapter 2. Current Scaling with Paralleled GaN HEMTs 31 2.1 Principle of Paralleling Power Semiconductor Devices 31 2.2 Comparison of Paralleling MOSFETS and GaN HEMTs 32 2.2.1 Package Architecture and Parasitic Implications 33 2.2.2 Reverse Conduction Characteristics 34 2.2.3 Layout and Parasitic Effects 36 2.2.4 Gate Drive Synchronization and Active Balancing 37 2.2.5 Parasitic Sensitivity Due to Switching Speed 37 2.3 Summary 38 Chapter 3. Parasitic Analysis of Paralleled GaN Devices 39 3.1 Finite Element Analysis and Multi-Physics System Integration 39 3.3.1 Passivity and Causality 40 3.3.2 Mathematical Definition of Passivity and Causality 43 3.2 Effects of Parasitics in Paralleled GaN HEMT 44 3.4.1 Double Pulse Test Recap 45 3.4.2 Gate Driver Requirements for Paralleled GaN HEMTs 49 3.4.3 Intrinsic Device Parameters Mismatch 50 3.4.4 Influences of Parasitic Inductance on Vgs 52 3.4.5 Influences of Parasitic Inductance on Vds 52 3.4.6 Influences of Parasitic Capacitance on Ids 58 3.3 Summary 59 Chapter 4. Hardware and Layout Design of the Half Bridge 60 4.1 GaN HEMT power device Specifications 60 4.2 GaN Half-Bridge Architecture 62 4.3 Parasitic Parameters Extraction Across Design Iterations 66 4.4 Simulation Results 71 4.5 Arbitrary Signal Generator 99 4.6 Summary 101 Chapter 5. Experiment Results 103 5.1 Experiment Setup 103 5.2 Results and Discussion 104 Chapter 6. Conclusion and future prospects 130 6.1 Conclusions 130 6.2 Future Work 132 Reference 133

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