本論文用Poly(4-vinylphenol)以添加分散劑的方法，把奈米級氧化鈦(TiO2)加在PVP裡面，製成有機-無機混合複合絕緣層薄膜。此複合絕緣層薄膜成功把未添加奈米粉體的PVP從K值3.5提高到3.9，提升幅度達11%，並且還能保持10-9次方漏電流密度，擁有極佳的絕緣特性同時具有無機性(抗震、耐拉)與有機性(可塑、透明、可撓)的特性。
並利用氧化鋅薄膜應用於元件通道層，氧化鋅薄膜採用射頻濺鍍法成長，針對氧氣與氬氣比例、濺度功率、退火處理溫度等參數做調變。並做晶體結構、表面形態及電性量測等等分析，來決定何種氧化鋅薄膜條件有利於TFT元件製作。
本TFT為上閘極結構，氧化鋅薄膜在濺鍍功率300W、氧氣氛濃度10%，退火溫度250℃情況下，複合絕緣層添加TiO2粉體濃度為0.6 VOL%，製作出空乏型TFT元件。開關比(on/off ratio)約為4.63*105、載子移動率為0.43cm2/V.S，臨限電壓為-3.7V。

This study implemented using the method of the dispersing agent with Poly(4-vinylphenol) to generate organic-inorganic thin film insulator layer. Through the adding TiO2 into organic-inorganic thin film insulator layer, the k value increased from 3.5 to 3.9. Furthermore, this insulator layer hold the current density of 10-9 with the extremely characteristic of isolation such as shockproof, and bears pulls and the characteristic of organic along with plastic, transparent and flexible.
Applies the zinc oxide thin film in the thin film transistor channel layer . The zinc oxide thin film uses the RF sputter to growth . In view of parameters on oxygen and argon proportion, RF power, annealing treatment temperature makes the accent changes .Makes crystalline structure, surface morphology and electrical characteristic and so on analyzes, decided that what kind of zinc oxide thin film condition is advantageous to the TFT device manufacture.
This TFT was considered as top gate electrode model, which consisted of the zinc oxide thin film in RF power 300W, the oxygen density of 10%, the annealing temperature under 250℃. This TFT model generated the depletion TFT device. The ratio of switch on/off ratio is approximately 4.32*105, and carries mobility is 0.43 cm2/V.S, threshould voltage is -3.7V.

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