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研究生：	楊明桓 Yang, Ming-Huan
論文名稱：	室溫融鹽中電鍍銻化銦薄層之探討 Electrodeposition of Indium Antimonide in Air and Water-Stable Room Temperature Ionic Liquid
指導教授：	孫亦文 Sun, I-Wen
學位類別：	碩士 Master
系所名稱：	理學院 - 化學系 Department of Chemistry
論文出版年：	2002
畢業學年度：	90
語文別：	中文
論文頁數：	137
中文關鍵詞：	室溫離子液體、電沈積、銻化銦、電化學
外文關鍵詞：	electrodeposition, Room Temperature Ionic Liquid, indium antimonide, electrochemistry
相關次數：	點閱：101 下載：1
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　　本文中利用鎳、鎢、玻璃碳白金電極去探討銦及銻在鹼性1-ethyl-3-methylimidazolium chloride tetrafluroborate融鹽中電化學行為。In(Ⅲ)及Sb(Ⅲ) 於此融鹽中分別以[InCl5]2-及[SbCl4]-的配位形式存在。由循環伏安法及定電位電解法探討其電化學行為，結果顯示In(Ⅲ)及Sb(Ⅲ)可經由quasi-reversible reaction還原成元素態的In(0)及Sb(0)。以電位階升法探討In(0)及Sb(0)的成核現象，其於GC、W電極上的成核機制分別為瞬時成核及逐步成核。
　　在鹼性1-ethyl-3-methylimidazolium tetrafluroborate融鹽中
電沈積銻化銦，實驗中電沈積電位、溫度及濃度是重要的因素。在固定In(Ⅲ)及Sb(Ⅲ)濃度的條件下，隨著電位往負電位偏移，其鍍層中In(0)的含量逐漸增加，直至擴散控制電位後，鍍層中銦及銻的比例趨近於一定值，其值與融鹽中In(Ⅲ)及Sb（Ⅲ）的濃度比相同。銦/銻比例為1的鍍層可於[In(Ⅲ)]=[Sb（Ⅲ）]條件下被鍍得。於不同溫度下電沈積所得的鍍層以XRD分析，結果顯示於30oC~120oC下電鍍即皆得到具有晶型結構的銻化銦。
　　實驗所鍍得的銻化銦以IR吸收光譜及測量光電流的方式鑑定，結果顯示電沈積所得之銻化銦為P型半導體，而其flatband potential及 band gap為-0.84V, 0.17eV。

　　The electrodeposition of indium and antimony on polycrystalline tungsten, and neckel and on glassy carbon was investigated in the basic 1-ethyl-3-methylimidazolium chloride tetrafluroborate. In(Ⅲ) chloride and Sb(Ⅲ) chloride were complexed as [InCl5]2-and [SbCl4]- in this melts. In(Ⅲ) and Sb(Ⅲ) could be reduced to their elemental state via the quasi-reversible reduction. Analysis of the dimensionless chronoamperometric current-time transients indicated that the electrodeposition of indium on glassy carbon and tungsten involved instantaneous three-dimensional nucleation with diffusion-controlled growth, On the other hand antimony on these electrodes involved progressive three-dimensional nucleation.
　　Indium antimonide could be deposited in basic EMI-Cl-BF4 ionic liquid. The deposition potential, temperature, and concentrations of In(Ⅲ) and Sb(Ⅲ) were the important factors affecting the deposition results. The content of indium in the deposites increased as the deposition potential became more negative. Under the diffusion limited condition, the ratio of the In/Sb in the deposites were relatively constant and was close to the concentration ratio of In(Ⅲ) to Sb(Ⅲ) in the deposition solution. XRD showed that crystalline InSb could be obtained within a deposition temperature range between 30oC~120oC.
　　IR and photocurrent measurements showed that InSb codeposites were P-type semiconductor The flatband potential and the band gap were –0.87V, 0.17eV, respectively.

目錄
表目錄…………………………………………………………………..Ⅴ
圖目錄…………………………………………………………………..Ⅶ
符號說明……………………………………………………………...xviii
第一章緒論....................................................................1
1-1室溫融鹽（Room Temperature Molten Salts）..................................1
1-2室溫融鹽的發展（Development of Room Temperature Molten Salts)..............4
1-3半導體材料：（The Material of Semiconductor）：...........................10
1-4載子的產生：（Charge carrier generation）：...............................11
1-5費米能階（Fermi level）:..................................................13
1-6 銻化銦(InSb)的性質、發展與研究動機.......................................15

第二章. 電化學原理與方法:
2-1循環伏安法（cyclic voltammery）...........................................18
2-2旋轉電極伏安法（rotating disk electrode voltammery，RDEV).................19
2-3電位階升法（potential step method，PSM....................................20
2-4定電位電解法（controlled potential electrolysis method , CPEM)............20
 2-5電化學成核原理（ Principle of lectrocrystallization）.....................21
2-5-1 成核動力 ............................................................. 21
2-5-2 二維空間的核成長（2D growth)...........................................25
2-5-3 三維空間的核成長（3D growth)...........................................27
2-5-4 其他的成核理論探.......................................................35
2-6 光電特性之探討：.........................................................37
    2-6-1 光電化學特性-平坦電位（flat band potential.........................37
    2-6-2 光電化學特性-能隙（bandgap）：.....................................43

第三章. 實驗裝置與儀器：
3-1儀器裝置..................................................................45
3-2儀器：....................................................................46
3-3實驗藥品..................................................................48
3-4融鹽的製備：..............................................................51
3-5光電特性測試：............................................................52

第四章.實驗結果與討論：
4-1氯化銦的電化學與銦之電沉積:...............................................55
4-1-1 氯化銦在鹼性EMI-Cl-BF4融鹽中的計量化學測定.............................55
4-1-2 氯化銦在鹼性EMI-Cl-BF4融鹽中電化學行為.................................57
4-1-3 In(Ⅲ)在鹼性EMI-Cl-BF4融鹽中的擴散係數.................................58
4-1-4 In(Ⅲ)/In在鹼性EMI-Cl-BF4融鹽中的形式電位..............................62
4-1-5 In(Ⅲ)在鹼性EMI-Cl-BF4融鹽中的異相轉移速率常數、還原轉移係數.....64
4-1-6 In(Ⅲ)在鹼性EMI-Cl-BF4融鹽中還原成In(0)的成核反應......................66
         4-1-7 In(0)在鹼性EMI-Cl-BF4融鹽中的電沈積...........................70
4-2 氯化銻的電化學與銻之電沉積:
4-2-1 氯化銻在鹼性EMI-Cl-BF4融鹽中的計量化學測定.............................79
4-2-2 氯化銻在鹼性EMI-Cl-BF4融鹽中電化學行為.................................79
4-2-3 Sb(Ⅲ)及Sb(Ⅴ)在鹼性EMI-Cl-BF4融鹽中的擴散係數.........................85
4-2-4 Sb(Ⅲ)/Sb(0)及Sb(Ⅲ)/Sb(Ⅴ)在鹼性EMI-Cl-BF4融鹽中的形式電位及異相轉移速率常數、還原轉移係數...................................................87
4-2-6 Sb(Ⅲ)在鹼性EMI-Cl-BF4融鹽中還原成Sb(0)的成核反應......................91
4-2-7 Sb(0)在鹼性EMI-Cl-BF4融鹽中的電沈積....................................99
4-3 銻化銦之電沉積:
4-3-1 銻化銦之電化學探討....................................................107
4-3-2 銻化銦之電鍍..........................................................108
4-3-3 電沈積電位及氯化銦/氯化銻濃度對組成成分的影響：.......................108
4-3-4不同電沈積溫度下表面晶形及型態的分析...................................109
4-3-5 相同濃度比例下各種絕對濃度之鍍層的組成及型態分析......................113
4-4 鍍層光電特性的探討
4-4-1 光電流法求其平坦電位（flat band potential)............................124
4-4-1 半導體能隙（band gap）的量測：........................................125
第五章.結論.................................................................130
參考文獻....................................................................133
                                    

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