各國現今致力於發展電動車輛、智慧伺服系統、再生能源等技術，電源轉換扮演極為重要的角色，其中高功率密度、高效率和快速響應是推動電源轉換技術發展的關鍵指標。為了達到此目標，希望在開關上能夠以更高的切換頻率工作，卻可能帶來更高的切換損、導通損等問題。新興的寬能隙半導體功率元件與矽金氧半場效電晶體相比，具有更好的特性，被認為是解決以上問題的選項。本文旨探討疊接式氮化鎵高電子遷移率電晶體的參數分析與振鈴抑制，首先介紹寬能隙半導體材料的特性，並說明疊接式氮化鎵高電子遷移率電晶體帶來的挑戰，透過雙脈衝實驗和SIMetrix模型針對其寄生參數分析對開關的影響，進而提出各種抑制開關振鈴的方法和選用方式，並說明雙層板及四層板PCB（Printed Circuit Board）電路佈局和量測考量的重點。最後以疊接式氮化鎵高電子遷移率電晶體的雙脈衝實驗四層板電路驗證本文提出的方法對振鈴抑制之有效性。

Nowadays, many countries are committed to the development of emerging technologies such as electric vehicles, intelligent servo systems and renewable energy. Among these technologies, high power density, high efficiency and fast response are the important considerations to develop more advanced power converters. Compared to the Si MOSFET, wide band-gap semicon-ductor power devices have a much better figure of merit (FOM) to show their potentials. This research is devoted to provide parameter analysis and ringing suppression of the cascode Gallium Nitride (GaN) high electron mobility transistor (HEMT). This thesis begins with the characteristic illustration of wide band-gap semiconductor power devices. To point out challenges of the cascade GaN HEMT, parasitic parameters have been analyzed by double pulse testing (DPT) and SIMetrix model. To reduce the parasitic effects, several methods of ringing suppression and printed circuit board (PCB) layout are also proposed. Finally, circuit simulation and experiments are successfully performed to verify the analysis and proposed methods.

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