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研究生：	林志民 Lin, Chih-Ming
論文名稱：	C頻段低雜訊放大器與功率放大器之研製 Design of C-Band Low Noise Amplifier and Power Amplifier
指導教授：	許渭州 Hsu, Wei-Chou 吳昌崙 Wu, Chang-Luen
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2003
畢業學年度：	91
語文別：	英文
論文頁數：	105
中文關鍵詞：	功率放大器、低雜訊放大器
外文關鍵詞：	IMFET, Balanced Amplifier, Power Amplifier, Low Noise Amplifier
相關次數：	點閱：122 下載：4
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本論文主要著眼於C頻段低雜訊放大器與功率放大器之研製。在通訊系統的接收端與傳輸端中，低雜訊放大器與功率放大器是相當重要的零組件。而由於資料傳輸的速度要求愈來愈快，許多應用於C頻段無線傳輸的系統快速而廣泛的發展。在設計方法上，我們採用混成微波積體電路（Hybrid MIC）及微帶線（microstrip line）的架構，並將匹配電路製作於氧化鋁基板上。
低雜訊放大器的設計，包含兩級的混成微波積體電路低雜訊模組，組裝於housing中。為了同時得到最低的雜訊指數與極佳的輸入和輸出電壓駐波比，模組的設計主要利用兩個300μm砷化鎵擬晶型高電子移動率場效電晶體 (pHEMT），以平衡式放大器的結構來實現。在5.3到5.9 GHz的頻率範圍，模組的雜訊指數為0.9dB，小訊號增益為12dB。而整體放大器的雜訊指數低於0.95dB，增益超過23.5dB。此低雜訊放大器顯示極佳的雜訊特性，適用於C頻段無線區域網路及ISM頻段的應用。
功率放大器的設計，乃選用12mm砷化鎵擬晶型高電子移動率場效電晶體為主動元件，並採用電晶體內部匹配的結構來匹配功率元件極低的輸入及輸出阻抗。而為了達到理想的功率匹配，以獲得最大的功率輸出，我們利用Cripps的負載線理論來選取最佳負載。在5.7到6.3GHz的頻率範圍，功率放大器的輸出功率為36dBm，相關的附加功率效率為40%，功率增益為10dB。

This thesis presents the design and implementation of C-band low noise amplifier and power amplifier. In the communication system, low noise amplifier and power amplifier are the key components at the receiving and transmitting end. Due to high data rate requirement, many C-band wireless applications have been proposed and developed. Hybrid MIC ( Microwave Integrated Circuit ) and microstrip-line configuration are employed in this design. Matching networks are realized on the alumina substrates.
The low noise amplifier was realized in a housing which was comprised of two MIC low noise modules. In order to achieve minimum noise figure and good input and output VSWR ( Voltage Standing-Wave Ratio ) simultaneously, each module was developed with balanced amplifier configuration using two discrete 300μm GaAs pHEMTs. The module was assembled on a Kovar carrier. It attains 0.9 dB noise figure and 12 dB small signal gain from 5.3 to 5.9 GHz band. The complete amplifier reveals noise figure as low as 0.95 dB with associated gain over 23.5 dB from 5.3 to 5.9 GHz. This low noise amplifier shows excellent noise performance enough for various C-band applications such as high data rate wireless LAN ( Local Area Network ) and ISM ( Industrial, Scientific, and Medical ) applications.
The power amplifier was developed using 12 mm GaAs pHEMT device. It delivers over 4 watt of output power from 5.7 to 6.3 GHz band, with 10 dB power gain and 40％ power-added efficiency. The design employed the internally matched FET approach to match the lower input and output impedance of the power device. To achieve optimum power match, we utilized Cripps’s load-line theory to predict optimum output impedance. The complete amplifier was mounted on a CuW carrier. This power amplifier is intended to be used in the transceiver for C-band wireless and satellite communication systems.

Abstract (Chinese)
Abstract (English)
Table Captions
Figure Captions
Chapter 1  Introduction................................................1
           1.1 Introduction                                                                                                    .....................................................1
           1.2 Chapter Outline...................................................3
Chapter 2  Principles of Microwave Amplifier Design....................5
           2.1 Introduction......................................................5
           2.2 Scattering Parameters.............................................6                        
           2.3 Power Gain and Stability..........................................8
               2.3.1 Power Gain......................................................8
               2.3.2 Stability Considerations........................................9
           2.4 Noise                                                                  ...........................................................11
               2.4.1 Noise in Two-Port Networks.....................................12
               2.4.2 Noise Factor and Noise Figure..................................13
               2.4.3 Noise Figure of a Cascaded System..............................14          
           2.5 Noise Match and Constant Noise Figure Circles....................15    
           2.6 Distortion and Linearity.........................................18  
           2.7 Dynamic Range and 1-dB Compression Point.........................19   
           2.8 Efficiency of Power Amplifier                                          ...................................20
           2.9 DC Bias..........................................................20
Chapter 3  C-Band MIC Low Noise Amplifier.............................32  
      	   3.1 Overview.........................................................32
           3.2 Circuit Description..............................................33  
           3.3 Specifications...................................................33      
           3.4 Choose a Topology................................................33 
           3.5 Device Selection.................................................35     
           3.6 Noise Match and Noise Model......................................36  
           3.7 Circuit Design...................................................36                 
           3.8 Simulation Results...............................................38             
           3.9 Layout and Fabrication...........................................39          
           3.10 Measurement and Analysis........................................40       
                3.10.1 DC Analysis...................................................40
                3.10.2 Gain and Return Loss Measurement..............................40
                3.10.3 Noise Figure Measurement......................................41
                3.10.4 Output Power Measurement......................................41
           3.11 Measurement Results.............................................42            
           3.12 Summary.........................................................43                    
Chapter 4  C-Band 4 Watt MIC Power Amplifier..........................69    
           4.1 Overview.........................................................69         
           4.2 Circuit Description..............................................69             
           4.3 Specifications...................................................70                 
           4.4 Class of Operation and Bias Points...............................70  
           4.5 Device Selection.................................................71                   
           4.6 Design Techniques................................................72              
               4.6.1 Load-Pull......................................................72
               4.6.2 Nonlinear Model................................................73
               4.6.3 Cripps Method..................................................74
           4.7 Power Model and Power Match......................................75       
               4.7.1 Calculation of Ropt............................................76
               4.7.2 Power Model....................................................76 
           4.8 Circuit Design...................................................76          
           4.9 Simulation Results...............................................77   
           4.10 Layout and Fabrication..........................................78    
           4.11 Measurement Results.............................................79    
           4.12 Summary.........................................................79             
Chapter 5  Conclusion................................................100               
References..........................................................103                            	
                                    

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校內：2004-06-26公開
校外：2004-06-26公開

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