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研究生：	張哲源 Chang, Che-Yuan
論文名稱：	以氟離子電漿技術研製增強型氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體 Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment
指導教授：	王永和 Wang, Yeong-Her
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2015
畢業學年度：	103
語文別：	英文
論文頁數：	93
中文關鍵詞：	氮化鋁鎵、氮化鎵、高電子遷移率電晶體、氟離子電漿處理、液相沉積法、二氧化鋯
外文關鍵詞：	AlGaN, GaN, HEMT, fluorine plasma treatment, liquid-phase deposition, ZrO2
相關次數：	點閱：120 下載：8
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本研究中我們成功利用氟離子電漿處理技術製作增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體，藉由佈值氟離子在氮化鋁鎵層當中，提高異質接面處的導電帶至費米能階以上，有效提升電晶體的臨界電壓值至0.3V，最大電流密度與最大轉換電導值為522 mA/mm和127 mS/mm。此外，以低溫、低製程困難度的液相沉積法，沉積高介電常數的二氧化鋯薄膜，製備出金氧半高電子遷移率電晶體，藉以改善部分掘入製程而造成閘極漏電流增加以及崩潰電壓下降的問題。為了瞭解液相沉積之二氧化鋯薄膜的化學組成、結晶相、表面粗糙度以及厚度，採用了〈一〉化學分析電子光譜儀、〈二〉X光繞射儀、〈三〉原子力顯微鏡與、〈四〉穿透式電子顯微鏡，分析其物理和化學特性，而閘極漏電流有效地降低至6.96 × 10-5 A/mm，三端崩潰電壓也提升至90 V，元件的高頻特性與低頻雜訊皆能有所改善。

In this study, we have successively fabricated the enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment techniques. The conduction band at the AlGaN/GaN interface is raised above the Fermi level as a result of the negatively charged fluorine ions incorporated in AlGaN layer. Therefore, the threshold voltage is effectively improved to 0.3 V. The maximum drain current and maximum transconductance are 522 mA/mm and 127 mS/mm, respectively. Besides, a low temperature and low fabrication difficulty liquid-phase deposition (LPD) is utilized to deposit a high dielectric constant thin film of ZrO2. The metal-oxide-semiconductor HEMT with ZrO2 thin film is also fabricated, which can solve the issues caused by the recess procedure, such as higher gate leakage current and lower breakdown voltage. In order to analysis the chemical composition, crystal phase, surface roughness, and thickness of the LPD-ZrO2 thin film, (1) Electron Spectroscopy for Chemical Analysis (2) X-Ray Diffractometer (3) Atomic Force Microscopy , (4) Transmission Electron Microscopy are adopted in this research. The gate leakage current can be effectively suppressed at 6.96 × 10-5 A/mm, and the three-terminal breakdown voltage is increased to 90 V. The high-frequency characteristics and low-frequency noise are also improved.

ABSTRACT (Chinese) I
ABSTRACT (English) III
ACKNOWLEDGEMENT V
CONTENTS VII
FIGURE CAPTIONS X
TABLE CAPTIONS XII
Chapter 1  Introduction
1	Background 1
2	Motivation 5
3	Organization 7
Chapter 2  Principle of AlGaN/GaN HEMT
1	Lattice Structure 8
2	AlGaN/GaN Heterojunction 10
2.1	Two-Dimensional Electron Gas (2DEG) 10
2.2	Spontaneous Polarization 11
2.3	Piezoelectric Polarization 16
Chapter 3  Experiments and Device Fabrication
1	Experimental Equipment 19
1.1	Sputter and E-Gun Evaporator (PVD) 19
1.2	High-Temperature Furnace 20
1.3	Spin Coater 20
1.4	Mask Aligner 20
1.5	ICP Etching System 21
1.6	RIE System 21
2	Fabrication Process 25
2.1	Mesa Isolation 25
2.2	Source and Drain Ohmic Contact 26
2.3	Gate Pattern Definition 27
2.4	Partial Recess and Fluorine Plasma Treatment 28
2.5	Liquid-Phase Deposition ZrO2 Thin Film 28
2.6	Schottky Gate Contact 29
Chapter 4  Results and Discussion
1	AlGaN/GaN HEMT with Partial Recess and Fluorine Plasma Treatment 37
1.1	Physical Properties 37
1.1.1	Secondary Ion Mass Spectrometer (SIMS) 37
1.2	Device Performance 39
1.2.1	Saturation Drain Current 39
1.2.2	Transfer Characteristics and Transconductance 42
1.2.3	Gate Leakage Current 49
1.2.4	Subthreshold Swing 51
1.2.5	OFF-State Breakdown Voltage 53
2 AlGaN/GaN MOSHEMT with Partial Recess and Fluorine Plasma Treatment 56
2.1	Chemical and Physical Properties 56
2.1.1	X-ray Photoelectron Spectroscopy (XPS) 56
2.1.2	X-Ray Diffraction (XRD) 56
2.1.3	Atomic Force Microscope (AFM) 58
2.1.4	Transmission Electron Microscopy (TEM) 61
2.2   Device Performance 63
2.2.1	Saturation Drain Current 63
2.2.2	Transfer Characteristics and Transconductance 63
2.2.3	Gate Leakage Current 65
2.2.4	Subthreshold Swing 68
2.2.5	OFF-State Breakdown Voltage 68
2.2.6	Capacitance-Voltage Measurement 71
2.2.7	Cutoff Frequency & Maximum Oscillation Frequency 71
2.2.8	Flicker Noise 73
2.2.9	Pulse I-V Characteristics 76
2.2.10 Output Power Characteristics 78
Chapter 5  Conclusion 80
Chapter 6  Future Work 84
References 86
                                    

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