本研究目的在於開發磁控濺鍍法鍍製摻雜鈣 (Ca) 元素的氧化銦鎵鋅 (IGZO) 薄膜，靶材的部分由工研院提供，透過燒結使得Ca取代IGZO的In元素，製備出P型IGZO:Ca塊材；目前沒有文獻製作出P型IGZO:Ca薄膜，大多是針對N型IGZO薄膜進行研究。
實驗主要探討不同功率下P型IGZO:Ca薄膜利用室溫磁控濺鍍法製備，分別於60瓦與80瓦得到P型IGZO:Ca薄膜。利用XRD與光學分析，了解薄膜的結晶相及光學特性，XPS探討IGZO:Ca薄膜的組成比例以及氧空缺所造成的影響。
搭配霍爾量測確認薄膜半導體特性，確認適當的P型IGZO薄膜參數，最後搭配N型矽基板製作成二極體元件(diode)，並觀察元件電性，是否具備整流特性。
從本實驗中得到以下的重要結果: (一) Ca 摻雜IGZO的薄膜特性為非結晶相的透明薄膜。(二) 60 W、80 W的IGZO薄膜具有P型的特性產生，該半導體變化與氧空缺及薄膜組成比例有關。(三) 60 W、80 W與n型矽基板接觸時具備整流特性分別為45.3及34.2；且在光感測器的應用方面，60 W的二極體有846.5的增益。

Summary

The main purpose of this thesis is to fabricate IGZO: Ca films by using the radio-frequency magnetron sputtering technique. The target is provided by the Industrial Technology Research Institute. In order to fabricate a P-type IGZO: Ca films, the In element in IGZO will be replaced by the Ca element through sintering. Nowadays there are no documents describing how to fabricate P-type IGZO: Ca films, and all of the researches are progressed under the situation by using the N-type IGZO film.
Experiments in this thesis mainly focus on the procedure of P-type IGZO: Ca films utilizing magnetron sputtering at room temperature. P-type IGZO: Ca films are obtained at 60 W and 80 W. By the help of XRD and optical analysis, the film’s crystal phase and optical properties can be understood. And by using XPS, the IGZO: Ca film’s composition ratio and oxygen vacancy can be investigated.
The thin film semiconductor properties can be confirmed by matching the Hall measurements. When the appropriate P-type IGZO film parameters are decided, the N-type silicon substrate can be arranged to create diode elements. Finally, the electrical components will be observed, to verify they have rectifying properties.

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