在早期的積體電路中雙載子是唯一可用的技術， 隨著對於氧化矽介面的了解和改善， 雙載子的技術一度遠優於NMOS和PMOS。但隨後CMOS漸漸的變成了主流技術在1970年初期，雖然CMOS技術有極大的進步和廣泛的應用在積體電路上，但雙載子電路仍有不可被取代的優點：較快速度與較高的電流驅動力。

為了要跟上快速發展的高速網路，越來越多的高速元件(SiGe HBT,GaAs HBT, InP HBT……等等) 被設計來實現這些電路。但儘管這些元件擁有多數較好的效能，他們卻有共通的缺點---昂貴的價格和複雜的製程。相反的CMOS製程不僅非常成熟且又價格便宜，若用CMOS製程來設計出高速元件，那麼在高速電路上將會是個很重要的角色；本論文的主角Gate-controlled Lateral BJT是個符合CMOS製程，且又擁有良好的直流特性，對於電流增益而言，NPN和PNP皆已分別達到200及150；而高頻特性中，截止頻率和最大震盪頻率都已經快達20GHz。這些良好的特性已足夠取代其他的高速元件，因此吾人將在此論文中詳細的介紹Gate-controlled Lateral BJT 的結構、工作原理以及特性參數

Bipolar technology was the only available technology in early IC production. With better understanding and improvements in the oxide-silicon interface, bipolar technology was surpassed by PMOS and NMOS technology. Subsequently, CMOS has become the mainstream technology since the early 1970s. Even, CMOS technology has tremendous progress and extensive application in ICs, Bipolar ICs still offer unique advantages; they have faster speed and higher current-driving capability than CMOS ICs.

In order to keep up with the rapid deployment of high-speed networks, more and more high-speed devices (SiGe HBT,GaAs HBT, InP HBT……etc.) were designed to realize the high-speed circuits. Though these devices have many good advantages, there are two cruel drawbacks—expensive cost and complex process. On the other hand, CMOS process is not only mature but also cheaper. If we can design the high-speed device with CMOS process, it will become the important role in high-speed ICs. The Gate-controlled Lateral BJT can be made with CMOS process and it has very good DC performance. The current gain of NPN and PNP is more than 200 and 150 respectively. And the cut-off frequency and max oscillation frequency is more than 20GHz. These performances are good enough to substitute for other high-speed devices. We will discuss all structures and characteristics in this thesis.

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