自從1983年IBM將化學機械研磨(CMP)這種方法應用於半導體製程後,1986年絕緣層（Oxide）CMP 問世,1988年鎢(Tungsten) CMP大量取代鎢回蝕刻,1994年台灣引進第一台的CMP,整個積體電路（IC）製程便提升到另外的境界。

　　CMP之介入;加速晶圓的全面平坦化製程技術在短短的幾年間積體電路(IC)就由0.25微米縮小到0.13微米,甚至90奈米以下,由此可知CMP在ULSI製作過程中之重要性是如何不可或缺。

　　CMP製程的特徵--全面平坦化;是在於製程的精確控制,因此除了一般可控參數的最佳化外,準確的終點偵測更是此一過程成功之關鍵。

　　本篇論文係針對CMP現有的終點偵測系統,在原理,設計及應用分別加以探究,同時對於繼之而起的Low-k與銅製程結合加以研究。從現有的各種方法中擇其具代表性實際製作以偵測的驗證,並找出適合各個不同製程步驟的終點偵測方式。

　　Following the successful application of the Chemical Mechanical Polishing (CMP) by IBM in 1983, the semiconductor manufacture process has been promoted to a new regime. Then the CMP becomes an very importance technology in ULSI manufacture soon and pushes the technology feature of IC process from 0.25 um to 0.13 um and even down to 90 nm during a short time of several years.

　　Global Planarization is the most feature of CMP process and depends on the precisely controlling of endpoint seriously.

　　In this thesis, the design and mechanism of various endpoint detection systems applied for dielectrics and metals have been studied in detail and evidenced experimentally.

[1]Hong Xiao,”Introduction to Semiconductor
Manufacturing Technology ",2001
[2]”VLSI 製造技術”,高立圖書有限公司,中華民國89
年
[3]Joseph M.Steigerwald,Shyan P.Muraka and
Ronald J.Gutmann”Chemical Mechanical
Planarization of Microelectronic Materials”
1997 by John Wiley & Sons,Inc.
[4]Shyam P.Murarka,Igor V.Verner and Ronald
J.Gutmann”Copper-Fundamental Mechanisms for
Microelectronic Applications” 2000 by John
Wiley & Sons,Inc.
[5]H.C.Chen,M.S.Yang,J.Y.Wu and Victor Wang”
The Investigation Of Galvanic In Post-Copper-
CMP Cleaning”IEEE Electron Device Letter
2000.
[6]David A.Chan,Bogdan Swedek,Andreas Wiswesser
and Manush Birang”Process Control and
Monitoring with Laser Interferometry Based
Endpoint Detection in Chemical Mechanical
Planarization”IEEE 1998
[7]Brain Stephenson and David Watts”In-Situ CMP
Copper Endpoint Control System”IEEE 2001
[8]S.J.Fang,A.Barda,T.Janecko,W.Little,D.Outley,
G.Hempel,S.Joshi,B.Morrison,G.B.Shinn and
M.Birang”Control of Dielectric CMP Using an
Interferometry Based Endpoint Sensor”IEEE
1998
[9]Applied Materials Taiwan Inc Corp Internal
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