| 研究生: |
曾資育 Zeng, Zi-Yu |
|---|---|
| 論文名稱: |
高PSR 之低壓降線性穩壓器 A Low Dropout Linear Regulator with High Power Supply Rejection |
| 指導教授: |
蔡建弘
Tsai, Chien-Hung |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 電機工程學系 Department of Electrical Engineering |
| 論文出版年: | 2008 |
| 畢業學年度: | 96 |
| 語文別: | 中文 |
| 論文頁數: | 65 |
| 中文關鍵詞: | 低壓線性穩壓器 |
| 外文關鍵詞: | LDO |
| 相關次數: | 點閱:48 下載:17 |
| 分享至: |
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本論文提出一個具有高電源拒斥效能低壓降線性穩壓器電路並建立一個完整設計流程包括了低壓降線性穩壓器和帶差參考電壓兩種電路。藉由結合了電源漣波減法器和高通濾波器兩種技術來達到改善電源拒斥效能。本電路使用TSMC 0.35um CMOS 2-poly 4-metal 標準製程技術。在最大負載電流為100mA、輸入電壓3.3V 下模擬PSR 效能的結果為: 10K Hz 的電源拒斥為-73.2dB、
100K Hz 的電源拒斥為-70.4dB、1M Hz 的電源拒斥為-39.2dB。所以本論文提出的低壓降線性穩壓器架構適用於前級切換式穩壓器的應用。總晶片面積為720×600μm2。
A low dropout regulator (LDO) of high power supply rejection (PSR) over wideband frequency is presented in this thesis, and a systematic procedure including LDO and
bandgap circuits is introduced. By combining supply ripple subtraction and high-pass filtering techniques, the proposed LDO’s PSR is improved. The proposed LDO
implemented with a standard 0.35μm CMOS 2-poly 4-metal process technology. The simulation results at maximum load current of 100mA and input voltage of 3.3v show that
the PSR of 10k, 100k and 1M are -73.2dB, -70.4dB and -39.2dB respectively. Therefore,it’s well suited for switching pre-regulator applications. The active area of this LDO is 720×600μm2.
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