本論文以TSMC 0.18-μm 1P6M CMOS製程，設計研究應用於UWB之射頻晶片，包含3.1-10.6-GHz寬頻低雜訊放大器、3-5-GHz電荷注入式CMOS混波器，以及4-GHz切換頻帶差動式柯畢茲壓控振盪器。
3.1-10.6-GHz低雜訊放大器是採用共閘極輸入電路當作第一級以利於寬頻的操作，再採用雜訊抑制的方法，來降低因為熱雜訊所造成的影響，量測結果增益為8.2-13.1 dB、雜訊指數為4.5-7.7 dB，輸入及輸出返回損耗都在10 dB以上，input P1dB為-13.4- -5.4 dBm。3-5 GHz CMOS混波器，相較於傳統的吉伯特混波器，增加了電流注入的方式，不但減低了流經開關級電流，減低了雜訊的影響，同時也避免因為電壓操作空間的不足，所造成的線性度下降。量測結果轉換增益5.2-8.7 dB、input P1dB介於-13.3- -7 dBm、IIP3介於-19.68— -16.45 dBm、LO-RF isolation大於20 dB。
使用切換頻帶差動式柯畢茲壓控振盪器，主要是著眼於採用柯畢茲架構的壓控振盪器有著較好的能量轉移效率，以及相位雜訊表現。經量測的結果，全部的頻率可調範圍介於3.31-4.17 GHz，輸出功率大於 -6 dBm，相位雜訊介於-114— -121.9 dBc/Hz@1MHz offset，同時為了涵蓋在低頻帶DS-UWB以及MB-OFDM上的應用，增加了3.31-3.64 GHz 及3.64-4.17 GHz之切換頻帶的選擇。晶片之動作原理與設計考量，以及發生之問題，均有完整之討論。

This thesis presents the research of CMOS RFICs for UWB receiver. Including 3.1-10.6-GHz LNA,3-5-GHz charge-injection mixer and 4-GHz differential band-switch Colpitts oscillator.
An ultra-wideband noise-canceling low-noise amplifier is presented. By using common gate technology as first stage, it’s benefit to broadband operation. The LNA’s measurement result:gain between 8.2-13.1 dB,NF between 4.5 - 7.7 dB，Return loss >10 dB and input P1dB between -13.4 - -5.4 dBm.
Comparing to traditional Gilbert-cell mixer, charge-injection technology can reduce the current flow into the switch stage. Thus the mixer’s NF and linearity could be improved. This mixer’s measurement result: conversion gain 5.2 - 8.7dB, input P1dB -13.3 - -7 dB, IIP3 -13.3 - -6 dBm, Isolation >20 dB.
Differential Colpitts band-switch topology has better energy transform efficiency and phase noise. Frequency tuning rage between 3.31 - 4.17 GHz, Output Power >-6 dBm,phase noise between -114 - -121.9dBc/Hz @1MHz offset.
Operation principle, design consideration and measurement result are discussed in this thesis.

[1] http://www.ieee802.org/15/pub/TG3a.html
[2] 江坤山, ”寬頻無線傳輸，發射!” 2005年 12月科學人雜誌
[3] http://www.intel.com/
[4] 許正德, ”高傳輸低耗電UWB(上)解說技術原理與特性,” 2005年9月號新通訊元件雜誌。
[5] 邱佳松,黃國威,陳坤明, ”超寬頻無線通訊技術概論,” 2003年11月20期電子與材料雜誌。
[6] 林山霖, ”UWB發達之路，價格為唯一擋路的石頭,” 2005年2月號新通訊元件雜誌。
[7] C.-P. Chang, C.-C. Yen, and H.-R. Chuang, “A 1-V 6-mA 3~6GHz Broadband 0.18-µm CMOS Low-Noise Amplifier for UWB Receiver,” to be published in Microwave and Optical Technology Letter, May 2007.
[8] R. Fisher et al., “DS-UWB physical layer submission to 802.15 task group 3a ,” IEEE P802.15-04/0137r4, Jan. 2005.
[9] A. Batra et at., “Multi-band OFDM physical layer proposal for IEEE 802.15 task group 3a,“ IEEE P802.15 Working Group for Wireless Personal Area Networks, March, 2004.
[10] B. Razavi, T. A. Christopher LAN and F. -R. Yang, ”A UWB CMOS Transceiver,” IEEE J.Solid-State Circuits, vol. 40 , no. 12, Dec. 2006.
[11] http://www.myoops.org/twocw/mit/Electrical-Engineering-and-Computer-Science/Spring-2005/lec11
[12] G. Gonzalez, Microwave Transistor Amplifiers, Prentice Hall,1997
[13] http://www.myoops.org/twocw/mit/Electrical-Engineering-and-Computer-Science/Spring-2005/lec10
[14] R. Liu, C. Lin, K. Deng and H.Wang, ”A 0.5-14 GHz 10.6-dB CMOS cascade distribute amplifier,” symp.VLSI Circuit Dig. 17, pp. 139-140, June 2003.
[15] A. Bevilacqua, and A. M. Niknejad, “An ultra-wideband CMOS LNA for 3.1 to 10.6GHz wirelesss receivers,” IEEE International Solid-State Circuits Conference, vol. 17 , pp. 382 -383, Feb. 2004.
[16] A. Ismail and A. A. Abidi, “A 3-10 GHz Low-Noise Amplifer With Wideband LC-Ldder Matching Network, “ IEEE J.Solid-State Circuits, vol. 39, no. 13, pp. 2269-2277, Dec. 2004.
[17] Ziemer and Tranter, Principle of Communications, Wiley , 1995.
[18] F. Bruccoleri, E. A. M. Klumperink and B. Nauta, ”Wide-band CMOS Low-Noise Amplifier exploiting thermal noise canceling,” IEEE J. Solid-State Circuits, vol. 30, no. 2 , Feb. 2004.
[19] C. -F. Liao and S. -I. Liu, ”A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receiver,”in IEEE Custom Intregrage circuits conference, 2005.
[20] http://www.myoops.org/twocw/mit/Electrical-Engineering-and-Computer-Science/Spring-2005/lec15
[21] http://www.myoops.org/twocw/mit/Electrical-Engineering-and-Computer-Science/Spring-2005/lec16
[22] A. Bevilacqua and A. M. Niknejad, ”An Untrawideband CMOS Low-Noise Amplifier for 3.1–10.6-GHz Wireless Receiver,” IEEE J.Solid-State Circuits, vol. 39 , no. 12, Dec. 2004.
[23] “Mixer Lecture,” class notes for ECE125B/ECE128B, Department of Electrical and Computer Engineering, fall 2005.
[24] L. A. MacEachern and T. Manku, ”A charge-injection method for Gilbert cell biasing,” in IEEE Canadian Conf. , vol. 1, pp. 365-368, May. 1998.
[25] H. Darabi and A. A. Abidi, “Noise in RF-CMOS mixers: a simple physical model,” IEEE Trans. Solid-State Circuits, vol. 35, no. 1, pp. 15-25, Jan. 2000.
[26] http://www.myoops.org/twocw/mit/Electrical-Engineering-and-Computer-Science/Spring-2005/lec14
[27] B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2000.
[28] T. H. LEE and A. Hajimiri, ”Oscillator Phase Noise : A Tutorial”, IEEE J.Solid-State Circuits, vol. 35 , no . 3 , Mar. 2000.
[29] M. Grozing, T. Stumbf, S. Hauger and M. Berroth, ”MOSFET Thermal- and 1/f-Noise Modulating Function for Impulse Sensitivity Function Theory of Oscillator Phase Noise,” 34 European Microwave Converence-Amsterdam, 2004.
[30] R. Apricio and A. Hajimiri,”A Noise-Shifting Differential Coliptts VCO”, IEEE J.Solid-State Circuits, vol. 37, no. 12, Dec. 2002.
[31] R. Apricio and A. Hajimiri, ”A Differential Noise-Shifting Coliptts VCO” ISSCC 2002 Dig. Tech. Papers, pp. 226-484, Feb. 2002
[32] B. Razavi, RF Microelectronics, Prentice Hall, 1998.
[33] E. Hegazi, H. Sjoland, and A. A. Abidi, ”A filtering technique to lower LC oscillator phase noise, ”IEEE J. Solid-State curcuits, vol. 36, no. 4, pp. 611-619, Apr. 2001.
[34] Andreani and S. Mattisson, ”On the use of MOS varactors in RF VCO’s” IEEE J. Solid-State curcuits,vol. 35, no. 6, pp. 905-910, June 2000.
[35] 林曉彤，應用於無線通訊之CMOS射頻微機電開關及2-GHz/5-GHz壓控振盪器RFIC之研究，國立成功大學電機工程研究所碩士論文，民國九十三年。