本論文係研究利用IC製造流程之微影蝕刻步驟以改變基板結構，並首次應用於不同線寬定義圖形以及不同基板材料上成長二硒銅銦吸收層薄膜於鉬背電極之薄膜太陽能電池研究。
吾人先利用標準黃光微影步驟以定義各種圖形，並採用濕蝕刻造成基板結構之改變。在同為濕蝕刻的前提下，採用不同材料將導致不同蝕刻圖形之三維分布，企圖在改變圖形線寬以及三維分布的情況下以影響晶粒之生長。微調得到最佳圖形定義參數後，吾人先濺鍍一層固定厚度之鉬金屬於改變結構之基板，然後用共濺鍍方式沉積銅銦先驅物，最後使用兩階段硒化法以成長出二硒銅銦吸收層薄膜。吾人利用SEM 來檢查有機薄膜的表面以及結晶形態、XRD 來研究表面結晶向、EDS 來檢視吸收層的硒銅銦各元素組成。比較各種線寬以及
材料以完成此太陽能電池吸收層的薄膜特性分析。實驗結果證實， 改變基板結構確實會影響晶粒尺寸、形狀、化學組成比例、結晶相強度。
吾人發現，含鈉玻璃基板、不含鈉玻璃基板、矽基板分別傾向形成三角形、寶石琢面、球狀的晶粒。根據XRD分析，圖形2-B 形成最高結晶強度CIS(220)/CIS(112)之比例。提高圖形密度以及減少相鄰距離將有助於結晶強度CIS(220)/CIS(112)之提升。比較已發表之使用三階段熱蒸鍍方式成長吸收層之文獻，我們在玻璃上定義圖形2-A以及3-B，成長二硒銅銦吸收層具有更高的潛能來發展高效率低成本二硒銅銦薄膜太陽能電池。

In this thesis, the main goal is to investigate the influence of different substrate patterns, structures, and materials on CuInSe2 (CIS) formation. To alter substrate structure, we adopt photolithography and wet etching processes excerpted from IC fabrication procedure. Glass and single crystal silicon were used as substrate. Mask with different patterns were designed and transferred to the substrates using lithography and wet etching process. The mask was designed to have various separations between patterns, consist of lines and squares. We started with sputtering a fixed-thickness Mo then co-sputtering to deposit Copper-Indium as metal precursors followed by two-step selenization process to form CIS film. We used SEM to observe the films’ morphology, XRD to examine crystalline orientation, EDS to analyze absorber layer’s stoichiometry. Experimental results verify that substrate structure does affect grain size, morphology, stoichiometry, and crystalline orientation.
We discovered that SLG, Na-free glass, and Si substrates tend to form triangular, faceted, and spherical grains, respectively. Pattern 2-B achieved highest (220/204)/(112) intensity ratio based on XRD data. Substrate with dense cavities and narrow spacing between cavities are recommended to grow CIS(220/204) preferred crystal orientation. Compared with literature’s SEM results, substrate using sodium free glass with 2-A or 3-B patterns has high potential for developing high efficiency and low cost CIS thin film solar cells.

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