本實驗利用直流磁控濺鍍方法製備Cr-Si-Al電阻薄膜在高純度氧化鋁基板上，使觀FE-SEM及GI-XRD觀察鍍膜之微結構。探討不同之濺鍍壓力、濺鍍功率及退火溫度對電阻薄膜之微結構、電阻率、及電阻溫度係數之影響與關係，並選用濺鍍工作壓力3mtorr及濺鍍功率300W製備薄膜晶片電阻器。
結果觀察：初鍍膜之電阻率與濺鍍功率呈負相關，而與濺鍍之工作壓力呈正相關。初鍍膜電阻率與鍍膜厚度，呈現先下降後上升之趨勢。退火溫度在350℃之前，鍍膜為非晶態，呈現負TCR。隨著退火溫度上升至400℃，鍍膜開始有微量的結晶析出，TCR隨退火溫度而呈正相關，在退火溫度至500℃時，TCR有急遽上升的現象，此為結晶晶粒數量及結晶尺寸變大之關係。退火溫度與電阻率的關係呈現先微幅上升，至450℃之後，電阻率開始下降，此現象可用活化隧道理論解釋。由FE-SEM之形貌觀察，在450℃有微小之結晶晶粒，550℃之結晶數量及尺寸均變大，與所觀察之退火溫度對TCR之影響相符。在GI-XRD的觀察中，在500℃之退火溫度下，有較明顯的結晶峰出現，比對為Cr5Si3之結晶結構。
以工作壓力3mtorr及濺鍍功率300W製備0603 680KΩ之薄膜晶片電阻器，其容差在±0.1%以內，TCR可達±25ppm/℃，Hot TCR與Cold TCR中心值相差約5ppm/℃。短時間過負載及壽命測試均符合規格需求。評估此Cr-Si-Al靶材可應用於型別0603 、阻值47KΩ~680KΩ、阻值容差±0.1%、TCR±25ppm/℃之薄膜晶片電阻器之製作。

Abstract
In this study, to prepare Cr-Si-Al resistive films in high-purity alumina substrate by DC magnetron sputtering method. FE-SEM and GI-XRD were used to observe the microstructure of thin films in order to explore the influence and relationships of the different sputtering pressure, sputtering power and annealing temperature on the resistivity and temperature coefficient of resistance of thin films. And to prepare the samples of thin film chip resistors with 3mtorr working pressure and DC 300W power sputtering conditions.
According to the results , as sputtering , the resistivity of films is negative correlation to sputtering power, and positive correlation to the sputtering working pressure. With the thickness of sputtered films increasing, the resistivity of films rises at the beginning and then goes down. The microstructure of the films annealed lower than 350℃ is in an amorphous state and as a negative TCR. As the annealing temperature rises to 400 ℃, sputtered films begin to trace the crystalline phase, and TCR is positive relation to annealing temperature. When the annealing temperature rises to 500 ℃, TCR a rapid rise remarkably. It caused by the number of crystalline grain and crystalline grain size are increase. Before annealing temperature 450℃, the resistivity of sputtered films is first increased slightly. After 450 ℃, the resistivity begins to decrease. This phenomenon can be explained by thermally assisted tunneling theory. The morphology by FE-SEM observing, a small grain of the crystalline phase begins to appear at 450 ℃. When annealed at 550 ℃,the volume fraction and size of crystalline phase increase obviously, as meet to the observation of the effect of annealing temperature on the TCR. In the GI-XRD observation, the annealing temperature at 500 ℃, there are the more obvious peaks of crystalline phase as compared to the crystal structure of Cr5Si3.
The preparation of 0603 680KΩ of thin film chip resistors was sputtered by 3mtorr working pressure and DC power 300W. Its tolerance at ± 0.1%, TCR up within ± 25 ppm/℃, The difference between the median of Hot TCR and Cold TCR is about 5 ppm/℃. Short time overload testing is within specification of requirements. After evaluation, this Cr-Si-Al target can be applied to product the thin film chip resistors of type 0603, resistance 47KΩ ~ 680Ω, resistance tolerance of ± 0.1%, TCR ± 25 ppm/℃.

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