| 研究生: |
傅聖文 Fu, Sheng-Wen |
|---|---|
| 論文名稱: |
外應力對可撓式有機太陽能電池之影響 Effect of External Stress on Flexible Organic Solar Cells |
| 指導教授: |
施權峰
Shih, Chuan-Feng |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 電機工程學系 Department of Electrical Engineering |
| 論文出版年: | 2011 |
| 畢業學年度: | 99 |
| 語文別: | 中文 |
| 論文頁數: | 64 |
| 中文關鍵詞: | 應力 、結晶性 |
| 外文關鍵詞: | stress, crytalline |
| 相關次數: | 點閱:125 下載:1 |
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本論文研究方向著重在三個部分。第一部分為可撓式有機太陽能電池的製作。採用P3HT (poly(3-hexylthiophene)) 共軛高分子和PCBM ( [6,6]-phenyl-C61-butyricacid methyl ester) 富勒烯 (Fullerene) 衍生物當作主動層材料,元件結構為PET/PEDOT:PSS(PH500)/P3HT:PCBM/Al,藉著調整PH500和主動層的厚度以及元件後退火的溫度來提升元件特性參數,在PET基板上製作出轉換效率為3.1%的可撓式有機太陽能電池。
第二部分開始探討外加應力對主動層薄膜的影響。藉由施加不同大小及方向的應力,由吸收光譜圖可知,主動層在受壓應力退火後,提高了600 nm左右波長的吸收,而在低掠角X光繞射光譜儀分析中發現壓應力會破壞P3HT (100) 結晶強度。
第三部分施加應力在可撓式有機太陽能電池上,觀察應力對元件特性參數所產生的影響。發現應變由0% 到0.5%過程中使開路電壓和短路電流低於未受應力的元件,原因是破壞了P3HT (100) 方向的結晶強度,以及鋁電極可能產生破壞和裂痕。但由0.5%到1.0 %時,則會使短路電流提升,受應力元件之效率皆小於未受應力之元件。
This work divided the subject into three parts. The first part, we investigated the blend of conjugated polymer and fullerene derivative -poly(3-hexylthiophene)/[6,6]- phenyl C61 butyric acid methyl ester-(P3HT/PCBM), which was widely used as active layers in organic solar cells. PET/PEDOT: PSS(PH500) /P3HT: PCBM/Al is the structure of device. By tuning the thickness of PH500 and active layer, annealing temperature, the device with better performance can be achieved. Finally, the flexible organic solar cells with PET substrate achieved the power conversion efficiency of 3.1%.
The second part, we discussed the optical absorption spectrum of active layer and P3HT-crystallinity that applied external stress on the active layer. It was found that the absorption peak of the absorption spectra was improved at 600 nm after annealing on the compressive-strained active layer. However, the P3HT (100) diffraction strength was decreased by grazing angle X-ray diffraction spectrometer (GIXRD).
Finally, when the strain brought on the flexible organic solar cells from 0% to 0.5%, the open-circuit voltages and short-circuit currents were lower than that of strain-free samples due to the decreasing of crystalline of P3HT (100) and the destruction of aluminum electrode. When the exerted strain were from 0.5% to 1.0%, the short-circuit current increased. All of these devices with stress have lower characteristic parameters than stress-free devices.
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