氧化鋅具有寬能隙(3.36eV)的特性，為II-VI族化合物半導體成員之ㄧ，在商業上經常做為螢光粉使用，同時也應用在薄膜電激發元件上。其優異的發光特性，且可發出可見光使其適合作為螢光材料，主要用於顯示器元件及照明光源上。
　　本論文利用固態反應法製備高品質的氧化鋅摻雜鉺及氧化鋅摻雜釤螢光粉體，並利用液相法製備氧化鋅奈米線，使用X光繞射、光激發光譜、掃描式電子顯微鏡、穿透式電子顯微鏡及拉曼光譜等量測來探討螢光體的特性與品質，藉由改變不同實驗參數得到預期的效果。
　　由實驗顯示，摻雜鉺之氧化鋅在燒結溫度為1000℃時，以摻雜濃度1%時有最佳之發光強度，在攙雜濃度為8%時有最大之發光頻寬具有近白光的發光特性；摻雜釤之氧化鋅在濃度5%時有最佳發光強度；本實驗也成功的在150℃合成出氧化鋅奈米線。

　　Zinc oxide with high energy band gap (3.36eV) is one of II-VI compound semiconductors. It is usually used as phosphor and applied as thin film electroluminescence device. Zinc oxide phosphor has much attention due to its excellent luminescence properties and can emit visible light. The major applications of zinc oxide phosphor are display device and light source.
　　In this report, we use solid state synthesis method to obtain high quality ZnO:Er and ZnO:Sm phosphors and use liquid synthesis to prepare ZnO nanowires. In order to discuss the characteristics and quality of these phosphors, they were characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, scanning electron microscope (SEM), transmission electron microscope (TEM), and Raman shift spectroscopy. By this measurements, we can change different experiment parameters to get preferred result.
　　According to the experimental results, ZnO:Er has the best emission intensity at 1% doping concentration as sintering at 1000℃. At 8% doping concentration, we observe the widest band emission ,and it is near white light emission. ZnO:Sm has the best emission intensity at 5% doping concentration. And we successfully synthesizes ZnO nanowires at 150℃.

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