本篇論文中詳述富矽氧化物薄膜於記憶體之應用，富矽氧化物薄膜(Silicon-rich-oxide, SRO)具有高溫退火後能形成矽奈米晶，以及本身具有高密度的矽懸鍵兩個特點，因此可以用於製作儲存電荷用途的MOS電容記憶體之結構。其儲存機制可分為量子侷限效應和缺陷的捕獲載子兩大類。
離子源功用為加速離子氣體撞擊薄膜表面，或藉由和電漿交互作用影響鍍膜過程，本研究使用氫氣離子源輔助鍍膜，目的在於對矽奈米晶的結晶性和矽氧相關缺陷態做調變，藉由C-V曲線的量測來觀察元件儲存電荷能力的差異性，並輔以高解析穿隧式電子顯微鏡(Transmittance electron microscopy, TEM)、光致螢光(Photoluminescence, PL)、X光光電子能譜(X-ray Photoelectron Spectrometer, XPS)分析來討論加入氫離子源後其結晶性與缺陷態的變化，最後提出一合理的解釋來解釋其現象。

Application of silicon-rich oxide (SRO) films for memory is discussion in detail. SRO films can be fabricated memory device because of it can form silicon nanocrystal after high temperature annealing and it have high density silicon dangling bond. The mechanism of charging effect are quantum confinement effect and defect state trap carriers.
Function of the ion source is accelerated ion gas to impact film. Hydrogen ion source can control and modify SRO charging layer property by destroy Si-Si bond and passivation silicon dangling bond. The size of the silicon clusters are controlled and modified by the Hydrogen ions. The hydrogen ion source assisted sputtering phenomenon and mechanism is also thoroughly explained and discussed.

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