本論文旨在針對磷化銦鎵/砷化鎵異質接面雙載子電晶體參數的萃取及其小訊號到大訊號之模型的建立。這當中我們也考慮了元件操作時的熱效應現象和在功率操作的非線性區應用。
　　本次實驗的模型以Gummel-Poon Model 為主，我們再另外加入一些參數來幫助我們模擬熱效應現象，以達到正確模擬異質接面電晶體的要求。同時，為了得到一個準確的大訊號模型，我們也另用一些量測的技巧把電晶體的外部寄生元件找出來。加上這些寄生量之後，配合我們的大訊號功率量測，便可以進一步的來驗證我們模型參數的準確性。
　　為了取得模型中各個參數的值，我們藉由IC-CAP 中的BJT 模型模組，來進行量測和參數萃取分析的動作，進而得到四個不同射極面積大小的HBT 初始參數值。接著再將這四組參數值針對熱效應現象做其餘的參數萃取。皆下來我們把本質元件參數加上外部寄生元件，建立一完整的大訊號模型。同時也進行元件本身的大訊號功率量測。
　　最後由實際的量測結果與模擬結果作一比較，來印證本論文中所建立的模型於模擬磷化銦鎵/砷化鎵異質接面雙載子電晶體特性的準確性。除了模型之建立以外，本論文也詳述了從小訊號到大訊號的量測和校正步驟。藉由準確的校正和正確的量測方法，我們才能確保我們所量測到的曲線是合理而可相信的。
　　綜合上述結果，本論文所建立的模型，確實能正確模擬砷化鋁鎵/砷化鎵異質接面電晶體的特性。

　　This thesis is to extract the parameters of InGaP/GaAs HBTs and toestablish the large signal model. We also consider the thermal effect when
devices operate and the application of power operation in nonlinear region.
　　We adopt Gummel-Poon model in this thesis and add some extra parameters to help us with the simulation of thermal effect to get the correct results in simulation. Besides, we also use some measurement techniques tofind out the external parasitic components to establish a accurate large signal model. With these parasitic components, we can verify the accuracy of ourmodel after large signal power measurement.
　　To get the values of every parameters in our model, we measure and extract parameters in the BJT model in IC-CAP. After these methods, we get initial values of four HBTs with different emitter area. Following, we extract the remainder parameters according to the thermal effect
curves.After that, we add the external parasitic components to the intrinsic device to establish a complete large signal model. At the same time, we
proceed the large signal power measurement of these four devices.
　　Finally, we compare the measurement results with simulations’ to verify the accuracy in simulate the characteristic of the InGaP/GaAs HBTs. Besides simulation, this thesis also describe detailed setps of measurements and calibrations from small to large signal. According to accurate calibrations and correct measurements, we can ensure our measured curves are reasonable and believable.
　　To sum up these results, we can simulate the characteristic of InGaP/GaAs HBTs correctly by the model we establish.

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