本文利用射頻磁控濺鍍系統製作氧化鎳/銀/氧化鎳( NiO / Ag / NiO )多層結構傳輸層應用於鈣鈦礦太陽能電池中，在簡單的製程中，多層結構具有良好光學和電學性能，可以有效增加傳輸層的穿透率以及電特性，提高光生電子的比率，使短路電流密度提升，進而改善整體元件轉換效率，實驗結果三層最佳條件為( NiO 30nm / Ag 7 nm / NiO 30 nm)，短路電流密度由19.45 mA/cm2提升至20.10 mA/cm2，轉換效率由11.02%提升至11.67%。
製作FAxMA1-xPbI3的合金鈣鈦礦，藉由調配FAI及MAI的比例來增加整體主動層的吸收範圍，隨著FAI加入，較大離子半徑的FAI將使主動層粒徑大小變大，較大的粒徑則可以導致電子電洞對複合減少或載流子擴散長度改善，使主動層能產生更多激子，使得短路電流密度獲得提升，提高整體元件轉換效率，相比其他主動層複雜改變的製程可能會引起鹵化物相分離或薄膜形貌的嚴重變化，材料結構複雜性的增加將使得再現性能方面出現困難，一個較為簡單的結構，則是只使用FA與MA陽離子的鈣鈦礦表現出比MA離子更長的電荷擴散長度和更接近理想值的帶隙。FA離子擁有較大的陽離子半徑，用較大比例的FA時，顆粒平均尺寸上升，容易出現像純 FAPbI3的黃色的非吸光晶相(黃色非鈣磷石δ-FAPbI3)，反過來將限制了FAXMA1-XPbI3的性能，因為所得薄膜的結晶性差。實驗結果FA0.1MA0.9PbI3的組合比例為最佳參數，短路電流密度由19.45 mA/cm2提升至22.08 mA/cm2，轉換效率由11.02%提升至12.30%。
最後，結合了氧化鎳/銀/氧化鎳( NiO / Ag / NiO )三層結構最佳條件及 FAxMA1-xPbI3 最佳比例作為正置鈣鈦礦太陽能電池元件，藉由三層傳輸層增加入光量以及主動層吸收增加，短路電流密度由19.45 mA/cm2提升至22.97 mA/cm2，轉換效率由11.02%提升至12.67%。

In this work, we use magnetron sputtering system to deposit nickel oxide, Ag and nickel oxide sequentially on the hole transport layer of the device. Triple-layer transport layer can effective increase the penetration rate and increase the short circuit current density to obtain better performance of perovskite solar cells (IPSCs). The power conversion efficiency (PCE) increased from 11.02% to 11.67%. In addition, we allocate the proportion of the active layer. when the ratio of deployment is FA0.1MA0.9PbI3, The power conversion efficiency (PCE) increases from 11.02% to 12.30%. In combination with triple-layer transport layer with NiO 30 nm / Ag 7 nm / NiO 30 nm and FA0.1MA0.9PbI3 active layer, the best performance of the IPSCs was obtained, and the power conversion efficiency was 12.67%.

第一章
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