隨著半導體元件尺寸日亦微縮，矽電晶體已達到其材料極限，現有的半導體製程技術或架構已陸續面臨許多瓶頸。傳統製程技術的改良抑或是新材料架構的研發便成為延續摩爾定律的要務。有鑒於此，本論文旨在研究三種有潛力新型互補式電晶體之通道材料：矽鍺、鍺和三五族化合物半導體，並以低能量低劑量離子佈植摻雜後，利用新型加熱退火方式：微波退火系統對於新通道材料之修復及活化研究。微波退火因加熱的方式有別於傳統熱退火，將有機會達到較低的熱預算與較佳的熱均勻性處理。
第一部分，我們使用微波退火與傳統熱快速退火分別對於硼離子佈植於矽鍺材料進行熱處理並比較其電性表現差異。其結果顯示，使用一階段微波退火能量 1800瓦，能使硼離子摻雜鍺比例為30%之矽鍺材料得到最低之片電阻值 170 ohm/sq.，並擁有較佳磊晶薄膜品質、最小佈植缺陷厚度 16奈米及最佳之殘留應力指數1.48%。另外，為了在不發生應力鬆弛情況下有效地提升摻雜硼離子之活化濃度，我們嘗試使用第二階段微波退火，其能量為600瓦持續時間100秒，經量測，其片電阻值再次降至134.61 ohm/sq.，摻雜載子移動率為302.7 cm2/Vs及殘留應力指數仍維持1.47% 左右水準。比較其傳統熱快速退火，顯示低熱預算微波退火方式有助於矽鍺新型材料之載子活化和應力之維持。
在本論文第二部分，根據本實驗室對於過往於材料矽熱處理活化研究及結合第一部分矽鍺經驗，新通道材料鍺於N型摻雜載子具有快速擴散及低固態溶解率之挑戰，故亦以低熱預算有潛力之微波退火技術進行熱處理，並與傳統熱快速退火比較。實驗結果顯示，第一階段微波退火能量1200瓦持續時間75秒，能夠使離子佈植磷離子之非晶態鍺完成固態磊晶再成長，隨後進行第二階段微波退火能量900瓦持續時間300秒，能夠有效活化摻雜磷離子，並降低其片電阻值至78 ohm/sq.，載子移動率1298 cm2/Vs和載子濃度高於1020 cm-3之水準，並從二次離子質譜儀量測顯示，經由兩階段微波退火後，摻雜載子亦無明顯發生擴散現象，由此再次證明，低熱預算微波退火技術有助於新型材料鍺之載子活化和抑制擴散之能力。
第三部分，為了克服N型鍺材料費米能級釘扎效應，我們結合介電層插入製程和微波退火技術達到其改善特性目的。微波退火因加熱的方式有別於傳統熱退火，將有機會對於介電層薄膜品質達到較低的熱預算與較佳的熱均勻性處理。結果顯示，三氧化二鋁及二氧化鈦厚度分別在2奈米及6奈米能得到最低蕭特基位障及接觸電阻。進而發現二氧化鈦降低蕭特基位障及接觸電阻能力優於三氧化二鋁，由於二氧化鈦與鍺有較低的導帶差，因而在降低蕭特基位障之外還能達到較小的穿隧阻抗，以達到較大的導通電流。另外，在使用微波退火 1200瓦的過程中量測到的試片溫度也約略為450度，但是此微波退火的試片得到了較低的缺陷密度、高的電流密度以及低的接觸電阻率。這些結果顯示微波退火避免了傳統熱退火可能帶來的負面影響。
文末我們探討以不同摻雜溫度矽離子於三五族化合物半導體材料，利用微波退火技術與傳統快速退火分別進行熱處理，並觀察對於其載子活化之情形。由穿透式電子顯微鏡圖片得知，高溫離子佈植能有效降低材料表面缺陷密度。另外，拉曼光譜顯示，亦發現微波退火能量1500瓦持續時間100秒，能夠完整修復表面缺陷及完成固態磊晶再成長，此結果與穿透式電子顯微鏡分析一致。並於二次離子質譜圖亦證明微波退火有良好抑制擴散能力。最後，光激發螢光光譜分析顯示，相較於傳統快速退火，最佳活化摻雜矽離子條件為離子佈植溫度於150度微波退火能量1800瓦且持續時間100秒，證明其具有較優異之鍵結能力。
本論文驗證新型微波退火技術應用於新型通道材料熱處理是可行的，並證明微波退火比傳統快速退火具有優勢，能夠以較低熱預算達到固態磊晶再成長及活化之效果，亦不會因能量提高而易發生載子擴散現象。這些結果皆可作為微波退火應用至先進半導體製程的展示和參考。

When the feature size of semiconductors devices is scaling down toward 7 nm and beyond, current manufacturing techniques are facing a variety of challenges due to higher processing requirement. Improvement on current techniques or development of novel technology thus becomes important to keep the Moore’s law alive. In this thesis, we study the three kinds of novel potential materials―silicon-germanium (SiGe), germanium (Ge) and the Ⅲ-V compound semiconductors which are ion implanted with low energy and low dose. In order to achieve lower sheet resistance, higher carrier concentration and higher residual strain, the new annealing technology ─microwave annealing (MWA) is employed in this thesis.
In the first part of this study, MWA over a wide range of power was performed on boron-implanted into Si0.7Ge0.3 samples. The sample was annealed at 1800 W microwave at the first step, which has the lowest sheet resistance of 170 ohm/sq., better quality of epitaxial layer, the minimum end-of-range defect thickness of 16 nm and the better residual stress index of 1.48%. Furthermore, at the second annealing step, contrary to the usual process of thermal annealing with higher temperature, a lower-power microwave process was used to maintain the stress while increasing the activation level. Sheet resistance of 134.61 ohm/sq., carrier mobility of 302.7 cm2/Vs and residual stress index of 1.47% are obtained with the second step MWA at 600 W for 100 seconds.
The second part, in our previous study, as we obtained good results using MWA as a post-implantation annealing process in Si and SiGe materials, the effect of MWA on the high-mobility Ge semiconductor material is of great interest. However, the Ge n-channel implementation has been challenging due to source-drain (S/D) doping and contact problems. In the first annealing step, a high-power microwave at 1200 W for 75 seconds was used to achieve solid phase epitaxial regrowth (SPER) and to enhance microwave absorption. Next, the second annealing step of MWA at 900 W for 300 seconds could make the phosphorous dopants activate effectively. For two-step MWA annealed sample, which has the lowest sheet resistance of 78 ohm/sq., higher carrier mobility of 1298 cm2/Vs and the carrier concentrations up to 1020 cm-3 and without dopants diffusion in the meantime.
In the third part, Fermi-level pinning effect are realized by integrating dielectric layer insertion process and MWA. Results show that the thickness of 2-nm Al2O3 and 6-nm TiO2 can achieve the lowest Schottky barrier height and the lowest specific contact resistance. It is also found that TiO2 has the better ability to reduce the Schottky barrier height and the specific contact resistance than Al2O3, since TiO2 and Ge has lower conduction band offset, which reduces the Schottky barrier in addition to a smaller tunneling resistance can be achieved. Samples with rapid thermal annealing (RTA) at 450°C are also fabricated for comparison at the same wafer temperature measured during MWA at 1200 W. For microwave annealed samples, key parameters such as density of interface states (Dit), current density and specific contact resistance were all improved with increasing MWA power.
In the final part of this thesis, Si-implanted with various temperature into III-V compound semiconductors at different MWA powers are investigated. Low defect density of surface is observed in the TEM image, and the Raman and SIMS results show that SPER can achieve, without dopants diffusion, with MWA at 1500 W for 100 seconds. Furthermore, photoluminescence (PL) spectroscopy analysis, these results reveal that MWA at 2100 W for 100 seconds of Si-implanted at 150℃ has the best condition in dopants activation and well bonding.
This thesis have demonstrated that the novel MWA technology applying to researching new high-mobility CMOS channel materials in electrical activation is useful. The low-thermal budget MWA could achieve SPER and dopant activation without diffusion. In short, the benefit of the potential MWA is powerful than traditional RTA, and the results pave ways for the techniques to be adopted in the advanced semiconductor processing.

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