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研究生: 鐘建川
Jong, Jiann-Chuan
論文名稱: IIDT結構表面聲波元件特性之探討
The Characteristics of SAW Devices with IIDT Structure
指導教授: 吳朗
Wu, Long
黃正亮
Huang, Cheng-Liang
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2003
畢業學年度: 91
語文別: 中文
論文頁數: 56
中文關鍵詞: 表面聲波
外文關鍵詞: SAW, IIDT
相關次數: 點閱:62下載:9
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  • 在本論文中,首先介紹了表面聲波元件的原理與特性,接著以IIDT為結構設計了六種不同形式的IDT與一種正規型式的IDT,在64O YX- LiNbO3的基板上進行實驗。每一種IDT型式再分別設計三種不同的輸入與輸出對數(3:2、4:3、5:4),所以一共可以得到二十一個不同的實驗結果。
    得到的實驗結果即是以正規型式所組成元件,當對數為3:2時,其介入損失為-8.02dB,當對數增為4:3時變成-7.17dB,當對數增為5:4時變成-5.82dB。亦即當增加輸入與輸出的對數時,其所得到的介入損失特性也會因此的變好,理論上可以無限制的增加對數,使得介入損失越趨近於理想值零,但同時也會因此增加元件的體積。
    使用不同型式,依照實驗結果得到當以4 Fingers為IDT架構時,其所產生的最好介入損失特性是-10.1dB,而當使用3 Fingers時為-10.75dB,使用2 Fingers時為-12..75dB。因此可得知以4 Fingers為IDT結構時,在介入損失方面的特性會優於3 Fingers與 2 Fingers。
    而比較正規型式與不同型式的結果可以得知,前者具有較好的介入損失特性及較小的通帶漣波,而後者則是具有5dB以上的抑制旁波瓣能力。

    In this thesis, the principles and the character of the Surface Acoustic Wave (SAW) devices are introduced first. Then six different IDT types and one normal IDT type are based on IIDT structure. By way of simulation and experiment results realized on 64o YX-LiNbO3 substrates are pressented. Each of IIDT SAW devices has the three different input and output pairs (3:2,4:3,5:4), so there are totally twenty one experiment results.
    The experiment results are when normal IDT’s input and output pairs rate is 3:2, and its insertion loss is –8.02dB, when the rate is 4:3, its insertion loss is –7.17dB, and when the rate is created to 5:4, its insertion loss is –5.82dB. In the thesis, we can creat the input and output rate unlimited, then the insertion loss will be closed to the ideal value zero, but it will also increase the devices size.
    Acording to the results, when we use 4 Fingers as IDT structure, it’s the best insertion loss is –10.1dB, and 3 Fingers insertion loss is –10.75dB, and 2 Fingers insertion loss is –12.75dB. Therefore, using the 4 Fingers IDT structure its insertion loss character will better than 3 Fingers and 2 Fingers.
    Compare the normal and different IDT structure, the former has better insertion loss and bassband ripple, and the latter has more than 5 dB sidelobe rejection.

    第一章 緒論………………………………………………………1 1-1表面聲波元件的歷史介紹……………………………………1 1-2表面聲波元件之應用…………………………………………5 1-3論文內容及架構………………………………………………5 第二章 原理………………………………………………………7 2-1表面聲波概論…………………………………………………7 2-2表面聲波元件所使用之基板材料……………………………10 2-3表面聲波濾波器之工作原理…………………………………13 2-4表面聲波元件之特性…………………………………………17 第三章 IIDT型式表面聲波元件之理論設計……………………20 3-1 IIDT理論說明……………………………………………… 20 3-2 IIDT的特性………………………………………………… 21 3-3 IDT基本結構…………………………………………………22 3-3.1不同型式IDT的設計……………………………………… 22 3-3.2電極特性說明………………………………………………23 3-3.3 IDT靜態特性………………………………………………26 3-4實驗設計參數說明……………………………………………31 第四章 實驗結果與討論…………………………………………34 4-1實驗結果………………………………………………………34 4-2實驗討論………………………………………………………48 第五章 結論………………………………………………………52 參考文獻………………………………………………………… 53

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