本論文之研究主題首先為改進氧化鎢膜之電致變色能力。吾人藉由改變靶材-基板距離去觀察氧化鎢膜表面效，對於所製作的氧化鎢膜進行電致變色性能量測與利用表面狀態量測提出一合理的解釋。此為傳統直流濺鍍方法所產生之氧化鎢膜膜質緻密卻變色性能不佳的狀況，提供一有效、方便適合做大面積變色顯示器的濺鍍方法。而為了配合此氧化鎢膜的低溫濺鍍製程，吾人研究了利用單、雙極直流脈衝磁控濺鍍法(Unipolar/Bipolar dc-pulsed magnetron)鍍製ITO導電膜。吾人藉由改變雙極性脈衝供應器之負極脈衝維持時間與正極脈衝維持時間的比值，來研究ITO薄膜特性。結果發現脈衝維持時間的比值對ITO膜的光電特性、表面粗糙度、濺鍍速率有很大的影響。在於某依條件下，吾人可以用一頗高的濺鍍速率得到高穿透率、低電阻直、低表面粗糙度的ITO導電膜。以此膜與氧化鎢膜所堆積的電變色元件所展現的變色能力亦較傳濺鍍方法統製造的ITO膜為佳。

　　再者，對於有機發光二極體(OLED)吾人研究了兩種方式來提升元件之發光效率。其一為利用直流鍍濺鍍法輔以離子輔助蒸(IAD)，於硬化處理過後之塑膠PC基板上製鍍光電性能、表面粗糙度均優的氧化銦錫(IZO)導電膜，並以此為OLED元件基板，製造出發光亮度頗佳的塑膠電激發光元件，由於是使用塑膠基板來取代厚重的玻璃，更展現出可撓曲不易損毀的特性。其二，吾人利用在成長雙層結構有機發光二極體元件(ITO/TPD/Alq3/Al)中的各有機層時，分別通入氮氣一起共蒸鍍來改善元件的發光特性。對於氮氣與電子傳輸層(Alq3)共蒸鍍所製造的OLED元件，其啟動電壓與操作電壓分別降至0.8及4.2伏特；而氮氣與電洞傳輸層(TPD)共蒸鍍所製造的OLED元件，則可將其發光效率提高至不參雜氮氣元件的八倍，達27 cd/A。

　　總而論之，本論文中成功的利用直流濺鍍系統製造出建築用智慧型窗戶(Electrochromic Device)及目前光電產業界頗受關注的有機發光二極體所需之透明之導電膜，並且利用真空熱蒸鍍法完成有機發光二極體之製作。更要強調的是所使用之鍍膜技術和設備均是目前光電業界生產大面積顯示器所使用的，吾人寄望將來本論文之研究成果能實際應用於大面積、高速率之量產鍍膜製程上。

　　In this dissertation, the improvements of tungsten oxide film’s characteristics for electrochromic device have successfully achieved by two methods as following: First, it is found that the electrochromic performance and the surface morphology of the tungsten trioxide (WO3) thin films sputtered by a dc reactive magnetron sputtering system, are strongly affected by the target-substrate distance. The coloration efficiency (CE) at 633 nm of the sputtered WO3 are 16 cm2/C and 50 cm2/C at the T-S distances of 6 cm and 18 cm, respectively. The film sputtered at longer target-substrate distance was rough, porous, and having cone-shaped columns morphology, thus offering a good electrochromic performance for opto-switching applications. Second, indium tin oxide (ITO) film, prepared by bipolar dc-pulsed magnetron sputtering in a mixture of argon and oxygen onto unheated glass substrates, has high transmittance, low resistivity, and low surface roughness. The ITO film can be utilized as transparent conducting layer of electrochromic devices with WO3, and the device exhibits better electrochromic performances in comparison to those measured with commercially available ITO films on glass substrates.

　　In addition, two methods of improving OLED (Organic Light Emitting Diode) performance were demonstrated successfully. First, high-quality indium zinc oxide (IZO) films (60-220 nm) were first grown on hardened poly-carbonate (HPC) substrate by ion-assisted dc magnetron sputtering without a post annealing treatment. IZO films grown at low temperature (~50 ℃) by ion-assisted dc magnetron sputtering were used for the organic light-emitting devices HPC substrate as a transparent anode. The as-prepared OLED shows an excellence efficiency and higher luminance in average, which is better than that prepared with commercial ITO anode. On the another hand, the bi-layer OLED, which Alq3 (Aluminum Tris-(8-hydroxyquinoline)) and TPD (N, N’-diphenyl-N, N’ bis (3-methylphenyl)-1, l’-bipheny-4, 4’-diamine) are used as the electron transport layer (ETL) and hole transport layer (HTL), respectively, exhibits significant improvements on current efficiency and power efficiency, when ETL and HTL were evaporated in the optimum N2 gas ambient, respectively.

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