近年來，學者已經開發和研究出各種不同類型的氣體感測器。自從金屬氧化物半導體與電阻式氣體感測器發表後，由於成熟的半導體製程技術，使得體積小、靈敏度高、及可大量生產的半導體式氣體感測器逐漸成為發展之主流。
本論文中所提出的感測元件是以透明導電薄膜之氧化銦錫為基材，透明導電薄膜材料多趨向於金屬氧化物半導體，又以氧化銦錫最為廣泛運用，其具有較寬的能隙(energy gap)約為3.5~4.06 eV，在可見光區範圍內有80~92 %的高透光率且紅外光區也是透明的，在導電性以及透光性中，氧化銦錫薄膜都優於其它的透明導電薄膜。
本實驗所探討之氧化銦錫之氨氣感測器是先以指叉型狀的電極再利用射頻濺鍍一層氧化銦錫薄膜，並製作成電阻式氣體感測器，接著分別使用不同的方式改變氧化銦錫薄膜的型態，進而研究其感測能力與響應特性。
首先，我們利用黃光微影及熱蒸鍍技術沉積指叉狀電極於藍寶石基板，接著於常溫下沉積氧化銦錫薄膜，最後定義出感測的區域完成最初始的氧化銦錫薄膜之氨氣感測器。
其次，針對不同的處理方法改善其感測能力，包含(1)探討氧化銦錫在不同基板溫度下沉積的特性。在不同的基板溫度下所沉積的氧化銦錫之表面型態也會有不同的特性，如：顆粒大小、直徑和結晶性之差異。(2)探討氧化銦錫表面之粗糙度，我們將氧化銦錫薄膜沉積於金奈米點之上。相較於初始的氧化銦錫薄膜氨氣感測器，沉積於金奈米點上的氧化銦錫薄膜之粗糙度遠大於未沉積金奈米點的氧化銦錫薄膜。(3)探討經過溫度及濕度處理後的氧化銦錫表面形態。經過處理後的氧化銦錫表面會形成類似奈米棒的型狀，進而增加表面積和體積比達到較高的感測靈敏度。(4)探討氧化銦錫沉積在石英玻璃基板且在不同基板溫度下沉積的特性，進一步與氧化銦錫沉積在藍寶石基板之氧化銦錫做比較。(5)探討表面具有孔洞結構的氧化銦錫薄膜氨氣感測器。由於氧化銦錫表面具有孔洞結構，增加了吸附氣體的表面積與體積比，進而提升感測靈敏度。
最後，由實驗結果可知，藉由氧化銦錫材料本身對氣體的感測特性，加上我們使用不同的處理方式，可以製備一高靈敏度之氨氣感測器，未來也希望將此感測元件與微機電系統整合以製作成多功能之智慧型感測器。

Over the past decades, different types of gas sensors were developed. With the progress of the semiconductor fabrication technologies, semiconductor-based gas sensors with small size and high sensitivity have become the mainstream in the gas sensor community.
The studied resistance-type gas sensors were based on the indium tin oxide (ITO) material. The indium tin oxide (ITO) thin films have been widely used. The ITO is an n-type semiconductor with a wider bandgap (3.5-4.06 eV). It also has smooth surface morphology, superior electrical conductivity, and optical transparency as compared to other TCO films. The studied devices provide a promising for high-performance NH3 sensor applications.
Indium tin oxide (ITO) thin films-based ammonia sensors were fabricated by RF sputtering with (i) heated treatments, (ii) Au nanodots, (iii) temperature-humidity treatments, and (iv) heated treatments on quartz substrates, are studied and demonstrated.
First, the studied ITO thin film-based ammonia sensors were made by conventional photolithography and thermal evaporation which was employed to produce the interdigitaized electrodes on the sapphire substrate. Then, the ITO thin film was deposited on interdigitaized electrodes.
Second, we used the different treated approaches to modify the ITO thin film, (1) heated the substrate temperature. Experimentally, the crystallinty and oxygen dificiency were increased by elevating the substrate temperature. (2) Au nanodots.
The added Au nanodots.induce a rougher ITO surface. (3) temperature-humidity treatment. After the treatment, the rod-like were formed. Subsequently, a larger surface to volume ratio could be improved the sensor response.(4) heated the substrate temperature on quartz substrate.
Finally, ammonia sensing characteristics of the ITO thin film-based gas sensors were studied and demonstrated. Based on the sensing mechanism of metal-oxide, the oxidizing gas could lead to the decrease of ITO conductance. Therefore, in this study, the ITO thin film-based gas sensors were fabricated toward relatively low resistivity in order to increase the variation range of the sensing signal. Consequently, the ITO thin film-based gas sensors show the potential for the integration of micro-electro-mechanical system (MEMS) application to develop and realize multifunctional smart sensors.

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