氧化鋅薄膜擁有N型導電性及高穿透度特性可應用為透明電極、太陽能電池及薄膜電晶體等電子元件。本文中，成功以溶膠凝膠法製備氧化鋅基薄膜為抗反射層並用於砷化鎵太陽能電池。成功提昇太陽能電池的光電流密度，整體電池的轉換效率也從原來(8.2%)提升至(13.86%)。
此外，我們也利用溶膠凝法製備氧化鋅基薄膜電晶體，並探討鋰的摻雜對於氧化鋅薄膜電晶體之影響。研究中顯示，氧化鋅摻鋰薄膜有更緻密薄膜形態，改善的載子濃度和減少的氧空缺使得薄膜電晶體有良好的元件電穩定性。
近年來非晶相金屬氧化物薄膜電晶體 (氧化銦鋅、氧化銦鋅鎵)因為擁有高載子遷移率以及均勻的薄膜表面粗操度，應用於主動式陣列有機發光二極(AMOLED)，一直受到矚目。本文中我們成功利用溶膠凝膠法以適當溶液比例的前趨物(醋酸鋅、硝酸鎵、硝酸銦)製備非晶相氧化銦鋅、氧化銦鎵鋅薄膜並製作成薄膜電晶體。文章中，我們探討後真空退火對於氧化銦鋅薄膜緻密化及孔洞性之影響，因而改善薄膜電晶體特性。另外我們探討鎂的摻雜對於氧化銦鎵鋅薄膜之影響。鎂的摻雜可以有效降低介面能態密度及降低薄膜的氧缺陷因而改善元件的電熱穩定性。
最後，相較於一般溶膠凝膠法需要高溫熱(>400 °C)退火的處理。本文發展紫外光臭氧照射並搭配後真空退火處理方式成功在低的製程溫度(200-300 °C)製備出高表現的IGZO薄膜電晶體。製備之電晶體其元件載子遷移率可達1.73 cm2/Vs，次臨限擺幅0.32V/dec，電流開關比超過1.3×107。此結果顯示紫外光臭氧激發能夠使得溶膠凝膠法在低溫製程下即可製備出氧化物薄膜半導體，將來可以廣泛應用於軟性電子元件。

Zinc oxide (ZnO) thin films with n-type conductivity and high transparency have been applied in devices such as transparent electrodes, photovoltaic cells, and thin-film transistors (TFTs). In this work, ZnO-based films were deposited by the sol-gel method and utilized as an anti-reflective coating (ARC) to enhance the light gathering capability and short-circuit current density (Jsc) of GaAs solar cells. The ARC significantly enhanced the conversion efficiency of cells from 8.2% to 13.86%. The results indicate that chemically deposited ZnO films are effective ARCs for GaAs solar cells.
In addition, the effect of lithium (Li) doping on the performance of solution-processed ZnO TFTs grown using the sol-gel method was investigated. Sol-gel-grown ZnO films have a polycrystalline phase with a cracked surface morphology due to the high-temperature thermal annealing. Li doping led to a compact surface morphology of the ZnO films. Moreover, Li doping reduced the carrier concentration and oxygen deficiency of ZnO films, improving TFT performance.
To study amorphous metal oxide thin films, InZnO (IZO) and InGaZnO (IGZO) films were prepared by spin-coating the sol with an aqueous solution of zinc acetate dihydrate, indium nitrate hydrate, and gallium nitrate hydrate for application as channel layers in TFTs. IZO and IGZO TFTs are attractive for use in active-matrix organic light-emitting diode (AMOLED) displays due to their high mobility and uniform roughness. In the present work, post-vacuum annealing treatment was used to aid sol-gel condensation and film densification to improve IZO TFT performance. The refractive index values were determined to explain the reduction in film porosity with increasing post-annealing temperature.
Moreover, the doping effect of Mg incorporated into IGZO thin film was studied. An Mg-doped IGZO TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.
Finally, ultraviolet (UV)-ozone photo-annealing and vacuum annealing were applied to fabricate low-temperature high-performance solution-processed IGZO TFTs. Generally, precursor-based methods require high temperatures (over 400 °C) to promote the metal-oxide-metal condensation reaction and to remove impurities and unnecessary carbon groups. With both UV-ozone irradiation and vacuum annealing treatment, IGZO TFTs with excellent characteristics (a field-effect mobility of 1.73 cm2V-1s-1, a subthreshold slope (S) of 0.32 Vdec-1, and an on/off current ratio greater than 1.3×107) can be fabricated at low process temperatures of 200-300 °C. The obtained results indicate that UV-ozone photo-annealing is an efficient process for the low-temperature preparation of sol-gel oxide semiconductors for flexible electronics applications.

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