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| 研究生： |
曾濟彬 Tseng, Chi-Ping |
|---|---|
| 論文名稱： |
氮化鎵/氮化鋁鎵高電子遷移率電晶體及其感測元件之應用 Investigation of AlGaN/GaN HEMT and Its Sensor Electronic Applications |
| 指導教授： |
張守進
Chang, Shoou-Jinn |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
| 論文出版年： | 2017 |
| 畢業學年度： | 105 |
| 語文別： | 英文 |
| 論文頁數： | 83 |
| 中文關鍵詞： | 氮化鋁鎵／氮化鎵 、高電子遷移率電晶體 、氧化鋅奈米線 、光檢測器 、氣體檢測器 |
| 外文關鍵詞： | AlGaN/GaN, SiN, ZnO, HEMT, Photodetector, Gas Sensor |
| 相關次數： | 點閱：128 下載：18 |
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在本篇論文當中，我們利用成長在矽基板上的氮化鎵/氮化鋁鎵試片製作高電子遷移率電晶體，實驗的方向分為兩個主軸。不同的隔離層厚度對氮化鋁鎵/氮化鎵高電子遷移率電晶體的影響以及氮化鋁鎵/氮化鎵高電子遷移率電晶體在氣體及光感測元件上的應用。
首先第一部分是探討氮化鋁鎵/氮化鎵高電子遷移率電晶體不同的隔離層厚度的試片比較，將一樣的製程應用在相同磊晶層的試片上，使用低壓化學氣相沉積不同厚度的氮化矽隔離層，在直流電性的部分，有氮化矽隔離層的高電子遷移率電晶體可以在閘極漏電流有明顯的抑制，並有較小的汲極漏電流密度，在臨界電壓有3到3.5伏特的正向偏移和電流飽和時有更佳的I-V曲線。
實驗的第二部分是將高電子遷移率電晶體應用於光檢測器與氣體感測器，於閘極區利用水熱法成長氧化鋅奈米線並利用氮化鋁鎵/氮化鎵高電子遷移率電晶體其異質結構氮化鋁鎵與氮化鎵之間的晶格不匹配會產生壓電極化效應，藉產生的二維電子氣 (2DEG) 可用來做為感測用途，本實驗分為光感測及氣體感測兩部分作為研究，並分別利用不同頻譜的光對其照射，量測其對光的感測能力，得到最高4.74A/W的響應並有24.74倍的拒斥比，另一部分，量測對酒精氣體的反應，加熱元件到300度並給予1伏特的偏壓可以成功量測到500ppm的酒精氣體並有最高3.81%的響應度以及4.3秒的上升時間。
In this thesis, aluminum gallium nitride/gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) covered with silicon nitride passivation on silicon substrate were fabricated, the experimental topic is divided into two main part. The effect of different silicon nitride passivation layer thickness on the AlGaN/GaN HEMT and the sensing application of in gas and UV detecting by Zinc oxide nanorod gated AlGaN/GaN based HEMT sensor.
In the first topic, devices with different thickness of silicon nitride passivation layer were fabricated by the same process. By using low pressure chemical vapor deposition (LPCVD) process, silicon nitride was grown on the AlGaN/GaN HEMT structure with two different thickness, 8nm and 16nm. In order to compare the different thickness of the passivation layer, the I-V characteristic were measured. Showing the device with thicker silicon nitride passivation has the better performance, not only depress the leakage current of the gate but also has positive threshold voltage shift and exhibits better I-V curves at the saturation states.
The second part demonstrate the sensing application of AlGaN/GaN HEMT, ZnO nanorod microstructure was synthesized by using simple hydrothermal method. The ZnO nanorods were used to fabricate a gas sensor to detect ethanol vapor. It is also capable for UV detecting as a photodetector. From the measurement results, AlGaN/GaN HEMT based sensor with ZnO nanorod has high, reversible and fast response to ethanol, and exhibited sensitive responsivity as photodetector demonstrating great potential application as a multiple function sensor.
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