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研究生： 郭嘉振
Guo, Jia-Chen
論文名稱： 鳍形奈米線之氮化鋁鎵/氮化鎵金氧半高速電子遷移率電晶體之研究
Investigation of Fin-Nano-Array AlGaN/GaN MOS-HEMTs
指導教授： 李清庭
Lee, Ching-Ting
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2019
畢業學年度： 107
語文別： 中文
論文頁數： 77
中文關鍵詞： 氮化鎵/氮化鋁鎵 、光電化學法 、電子束微影系統 、鰭形結構
外文關鍵詞： AlGaN/GaN, Photoelectrochemical wet etching and oxidation, electron beam lithography system, fin structure
相關次數： 點閱：102  下載：6 
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    • 本論文選用氮化鋁鎵/氮化鎵作為實驗基礎，其在異質接面處具有優選c-自發極化特性，使電子聚集於異質結構界面處形成二維電子氣(two dimensional electron gas,2DEG)通道，此通道具有高電子遷移率以及高電子飄移速度等特性，且氮化鎵本身為寬能隙材料，使氮化鋁鎵/氮化鎵能工作於高崩潰電場、高溫及高頻環境。利用上述提及的材料特性，完成平面式結構與具有不同通道寬度的鰭形結構氮化鋁鎵/氮化鎵之金氧半高速電子遷移率電晶體(MOS-HEMTs)。
    在鰭形結構的部份，本論文使用電子束微影系統搭配光電化學法蝕刻出鰭形結構，利用光電化學蝕刻法蝕刻氮化鋁鎵薄膜至二維電子氣通道，可以有效改善乾式蝕刻轟擊氮化鋁鎵表面所造成的缺陷，再以光電化學氧化法生長高品質氧化層作為閘極絕緣層並鈍化氮化鋁鎵表面。
    在量測數據的部份，鰭形結構相較於平面式結構多出兩側與通道的接觸面積，使閘極控制通道的能力提升，促使臨限電壓(threshold voltage, VTH)正偏移、提升最大轉移電導(gm(max))、減少次臨界擺幅(subthreshold swing, S.S.)、減少閘極漏電流及改善高頻與低頻雜訊特性，且隨著鰭形結構的通道寬度縮小，電場侷限效果更加強烈，能更有效控制二維電子氣通道的載子濃度，進一步提升空乏型電晶體元件的工作特性。

    In this research, the AlGaN/GaN heterostructure was used to fabricate planar structure and fin structure metal-oxide-semiconductor high-electron-mobility transistors with different channel width. To fabricate planar structure and fin structure, we used electron beam li-thography system and photoelectrochemical method. The electron beam lithography sys-tem could fabricate nanoscale fin pattern and precisely defined the fin pattern at the mid-dle of source electrode and drain electrode. At the same time, the photoelectrochemical wet etching method can prevent AlGaN surface from destroying by the plasma, and the photoelectrochemical wet oxidation method could directly grow high quality oxide on the AlGaN layer as gate dielectric film. Combining the advantages mentioned above, we suc-cessfully fabricated the fin structure with different channel width met-al-oxide-semiconductor high-electron-mobility transistors. To verify the advantage of fin structure, we analyzed the performances of fin structure transistors. Finally, we found fin structure could increase contact area between side walls of gate which would improve the performance of transistors.

    摘要 I Abstract III 致謝 XI 目錄 XIII 表目錄 XVII 圖目錄 XVIII 第一章 簡介 1 1.1 氮化鋁鎵/氮化鎵高速電子遷移率電晶體 1 1.2 研究動機 2 1.3 論文架構 3 參考文獻 7 第二章 原理與文獻回顧 10 2.1 氮化鋁鎵/氮化鎵異質結構 10 2.1.1 氮化鋁鎵/氮化鎵異質結構之成長 10 2.1.2 二維電子氣之特性 11 2.2 氮化鋁鎵蝕刻原理 11 2.2.1 光電化學(Photoelectrochemical, PEC)濕式蝕刻法 11 2.3 鰭形結構 13 2.3.1 鰭形結構原理與應用 13 2.4 高頻量測S參數 14 2.5 崩潰電壓 16 2.6 低頻雜訊 17 參考文獻 24 第三章 元件製程及量測儀器 29 3.1 試片結構 29 3.2 元件製作流程 29 3.2.1 高台隔離製作 29 3.2.2 硫化表面處理 32 3.2.3 歐姆接觸電極 32 3.2.4 鳍形多通道製作 33 3.2.5 閘極氧化層製作 35 3.2.6 閘極電極製作 36 3.3 製程及量測儀器 36 3.3.1 電子束微影系統 36 3.3.2 電子束蒸鍍系統 37 3.3.3 穿透式電子顯微鏡 37 3.3.4 DC電流-電壓量測系統 38 3.3.5 高頻量測系統 38 參考文獻 46 第四章 實驗結果與討論 48 4.1 平面式之高電子遷移率場效電晶體 48 4.1.1 平面式結構之直流特性量測 48 4.1.2 平面式結構之閘極漏電流及崩潰電壓量測 49 4.1.3 平面式結構之高頻特性量測 50 4.1.4 平面式結構之低頻雜訊量測 50 4.2 鰭形結構之高電子遷移率場效電晶體 51 4.2.1 鰭形(102 nm)結構之直流特性量測 51 4.2.2 鰭形(102 nm)結構之閘極漏電流及崩潰電壓量測 52 4.2.3 鰭形(102 nm)結構之高頻特性量測 53 4.2.4 鰭形(102 nm)結構之低頻雜訊量測 53 4.2.5 鰭形(72 nm)結構之直流特性量測 53 4.2.6 鰭形(72 nm)結構之閘極漏電流及崩潰電壓量測 54 4.2.7 鰭形(72 nm)結構之高頻特性量測 54 4.2.8 鰭形(72 nm)結構之低頻雜訊量測 55 4.3 平面式、鰭形(102 nm)與鰭形(72 nm)結構之高頻參數 55 參考文獻 72 第五章 結論 76

    第一章
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    第二章
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    第三章
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    第四章
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