成功大學博碩士論文系統

簡易檢索 / 詳目顯示

回結果列表

研究生：	呂銘皓 Lu, Ming-Hao
論文名稱：	使用氮化矽/氧化矽/氮氧化矽為鈍化層之高功率氮化鋁鎵/氮化鎵異質接面金屬-絕緣體-半導體-高電子遷移率電晶體之關鍵製程研發與可靠度分析 Critical Process Development and Reliability Analysis in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/SiO/SiON Passivation Layer
指導教授：	高國興 Kao, Kuo-Hsing
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 奈米積體電路工程碩士博士學位學程 MS Degree/Ph.D. Program on Nano-Integrated-Circuit Engineering
論文出版年：	2020
畢業學年度：	108
語文別：	英文
論文頁數：	115
中文關鍵詞：	氮氧化矽、高崩潰電壓、氮化鎵、電漿輔助化學氣相沉積
外文關鍵詞：	Silicon oxynitride(SiON), high breakdown voltage, Gallium nitride(GaN), Plasma Enhance Chemical Vapor Deposition(PECVD)
相關次數：	點閱：101 下載：0
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

在本篇論文中著重於金屬-絕緣體-半導體-高電子遷移率電晶體之製程上的改進，以進一步的提升電晶體之崩潰特性，使得電晶體能夠操作於惡劣環境之中依舊能維持一定性能的水平，並特別針對源極與汲極區域之表面進行處理，以減少原生氧化層及電晶體製造過程中造成的氧化物影響歐姆接觸之特性，造成電晶體之輸出特性退化，而影響電晶體之性能。
本篇論文中我們成功的製造了氮氧化矽閘極結構之高電子遷移率電晶體、氮化矽閘極結構之高電子遷移率電晶體以及氧化矽閘極結構之高電子遷移率電晶體，並對以上三種閘極結構之電晶體進行耐壓測試。其中氮氧化矽閘極結構之電晶體在隔絕空氣影響的狀態下得到了高達 2184 伏特的耐壓特性，而氮化矽與氧化矽閘極結構之電晶體分別得到 2001 伏特與 1086 伏特的耐壓結果。
氮氧化矽閘極結構之電晶體在可靠度測試中亦有傑出的表現。相較於氮化矽與氧化矽閘極結構之電晶體，氮氧化矽閘極結構之電晶體在正偏壓與負偏壓長時間加壓於閘極上之可靠度測試得到較小的臨界電壓飄移，該結果顯示了氮氧化矽絕緣層具有較低的界面態密度( interface state density, Dit )，因此能夠降低偏壓下絕緣層捕獲電子/電洞的程度，而降低臨界電壓飄移的程度，如此一來能夠降低因臨界電壓飄移，造成元件失效的風險。此外，在動態導通電阻的可靠度測試中，氮氧化矽閘極結構之電晶體亦有動態導通電阻變化較小的傑出表現。由於高功率元件經常需要在高壓與低壓之間頻繁切換運作，若高功率元件所採用的絕緣層具有較少的電荷補陷，則能夠降低高壓與低壓頻繁切換造成的動態導通電阻提升。

This thesis focus on the process improve for AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistor (MIS HEMT). In order to further improve breakdown characteristics of transistor. Thus, transistor can be operated in a harsh environment and keep a certain level of performance. Besides, surface treatment with dilute HCl and dilute buffer oxide etch solution for source and drain region are necessary. With these surface treatments can remove the native oxide and the oxide produce during the process effectively and prevent degenerate the transistor output characteristics.
In this thesis have already successful fabricate the AlGaN/GaN MIS HEMT with SiON insulator, Si3N4 insulator, and SiO2 insulator. Especially, SiON insulator-based MIS HEMT achieve high breakdown voltage of 2184V at the condition of air block with FC40 Fluorinert.
SiON based MIS HEMT also perform superior reliability than SiO2 and Si3N4 based MIS HEMT. SiON shows lower threshold voltage shift under the PBTI and NBTI reliability measurement and stable on-state resistance under current collapse reliability measurement. Both BTI and current collapse measurement results indicate that the SiON have lower interface state density, it means that electron are not easy be trap into SiON insulator. Thus, SiON is more reliable and very promising for practical power switching applications.

摘要 .................... I 
Abstract .................... II 
致謝....................III
Contents.................... IV 
Figure Captions .................... VI 
Table Captions .................... XIII 

Chapter I Introduction.................... 1
1 Background.................... 1
2 AlGaN/GaN MIS HEMT .................... 4
3 Ohmic Contact....................10
4 Motivation .................... 12
5 Organization of The Thesis .................... 13

Chapter II Ohmic Contact Optimize .................... 14
1 HCl Pre-treatment.................... 14 
2 BOE Pre-treatment .................... 15 
3 TLM Performance .................... 15 
4 TEM Image and EDS Analysis.................... 18
4.1 Surface without dilute BOE treatment .................... 18 
4.2 Surface with dilute BOE treatment.................... 19

Chapter III MIS HEMT Process.................... 20
1 Standard Process.................... 20 
1.1 Clean.................... 20 
1.2 Lithography .................... 20 
1.3 Plasma Enhanced CVD (PECVD).................... 21 
1.4 Physical Vapor Deposition (PVD) .................... 21 
1.5 Dry Etching .................... 22 
1.6 Wet Etching .................... 22 
1.7 Ion Implantation....................23 
1.8 Rapid Thermal Annealing (RTA).................... 24
1.9 Lift-Off.................... 24 
2 Au Ohmic MIS HEMT process....................25 
2.1 Depletion Mode Au Ohmic MIS HEMT Process ....................25 
2.2 Enhance Mode Au Ohmic MIS HEMT Process .................... 36 
3 Au-free Ohmic MIS HEMT Process .................... 45 
3.1 Depletion Mode Au-free Ohmic MIS HEMT Process .................... 45 
3.2 Enhance Mode Au-free Ohmic MIS HEMT Process.................... 53 
4 Reticle Design and microscope image .................... 62

Chapter IV Result and Discussion .................... 64
1 Measurement Instrument and Method Introduction.................... 64 
1.1 Measurement Instrument .................... 64 
1.2 Threshold Voltage Definition .................... 64 
1.3 Breakdown Voltage Definition .................... 65 
1.4 PBTI and NBTI Measure Method.................... 66 
1.5 Dynamic Ron Measure Method .................... 67
2 SiON Based MIS HEMT Electrical Characteristics....................68 
2.1 SiON MIS HEMT Basic Electrical Characteristics.................... 69 
2.2 SiON MIS HEMT Breakdown Characteristics .................... 75 
2.3 SiON Reliability Analyze .................... 81
3 Si3N4 Based MIS HEMT Electrical Characteristics .................... 90 
3.1 Si3N4 MIS HEMT Basic Electrical Characteristics ....................90 
3.2 Si3N4 MIS HEMT Breakdown Characteristics.................... 92 
3.3 Si3N4 Reliability Analyze .................... 94
4 SiO2 Based MIS HEMT Electrical Characteristics.................... 100 
4.1 SiO2 MIS HEMT Basic Electrical Characteristics.................... 100 
4.2 SiO2 MIS HEMT Breakdown Characteristics ....................102 
4.3 SiO2 MIS Reliability Analyze ....................104
5 Discussion.................... 110 
5.1 SiON, SiO2, and Si3N4 Comparison .................... 110 
5.2 Effect of SiON insulator element ratio on MIS HEMT.................... 111

Chapter V Conclusion and Future Work ....................112
1 Conclusion .................... 112 
2 Future Work .................... 112
VI Reference....................113
                                    

[1] More-than-Moore White Paper, Int’l Technology Roadmap on Semiconductors (ITRS), 2010.
[2] S. Dimitrijev, J. Han, D. Haasmann, H. A. Moghadam and A. Aminbeidokhti, "Power-switching applications beyond silicon: The status and future prospects of SiC and GaN devices," 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, Belgrade, pp. 43-46, 2014.
[3] N. Kaminski and O. Hilt, "SiC and GaN devices - wide bandgap is not all the same," in IET Circuits, Devices & Systems, vol. 8, no. 3, pp. 227-236.
[4] Y. F. Wu, "Very high breakdown voltage and large transconductance realized on GaN heterojunction field-effect transistors", Appl. Phys. Lett., vol. 69, pp. 1438-1440, Sep. 1996.
[5] I. Akasaki, "Effect of AIN buffer on crystallographic structures and on electrical and optical properties of and GA1-xAlxN (0 < x < 0.4) films grown on sapphire substrates by MOVPE", J. Cryst. Growth, vol. 98, pp. 209-212, 1990.
[6] R. S. Pengelly, S. M. Wood, J. W. Milligan, S. T. Sheppard and W. L. Pribble, "A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs," in IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 6, pp. 1764-1783, June 2012.
[7] K. J. Chen et al., "GaN-on-Si Power Technology: Devices and Applications," in IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 779-795, March 2017.
[8] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, et al., "Two-dimensional electron gases induced by sontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys., vol. 85, no. 6, pp. 3222-3333, Mar. 1999.
[9] B. E. Foutz, S. K. O'Leary, M. S. Shur and L. E. Eastman, "Transient electron transport in wurtzite GaN InN and AlN", J. Appl. Phys., vol. 85, pp. 7727-7734, 1999.
[10] C. P. S. Gayathri, D. V. Satyanand, B. S. Kiran, T. N. Sravya, B. P. Singh and V. Kumar, "Elastic properties of zincblende III-nitrides: A first-principles study," 2015 International Conference on Microwave and Photonics (ICMAP), Dhanbad, 2015. [11] S.-H. Park and S.-L. Chuang, "Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment", Appl. Phys. Lett., vol. 76, no. 15, pp. 1981-1983, Apr. 2000.
[12] H. L. Störmer, R. Dingle, A. C. Gossard, W. Wiegman and M. D. Sturge, "Two- dimensional electron gas at a semiconductor-semiconductor interface", Solid State Commun., vol. 29, pp. 705, 1979.
[13] T. Wu et al., "Time dependent dielectric breakdown (TDDB) evaluation of PE- ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E- mode MIS-FETs," 2015 IEEE International Reliability Physics Symposium, Monterey, CA.
[14] Perez-Tomas, A., Fontsere, A., Jennings, M.R., Gammon, P.M.: ‘Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC’, Mater. Sci. Semicond. Process., 2013.
[15] T. Hsieh et al., "Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS- HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer," in IEEE Electron Device Letters, vol. 35, no. 7, pp. 732-734, July 2014.
[16] J. A. Bardwell, G. I. Sproule, Y. Liu, H. Tang, J. B. Webb, J. Fraser, et al., "Comparison of two different Ti/Al/Ti/Au Ohmic metallization schemes for AlGaN/GaN", J. Vac. Sci. Technol. B, vol. 20, no. 4, pp. 1444-1447, Jul./Aug. 2002. [17] J. O. Song, J. Ha and T. Seong, "Ohmic-Contact Technology for GaN-Based Light- Emitting Diodes: Role of P-Type Contact," in IEEE Transactions on Electron Devices, vol. 57, no. 1, pp. 42-59, Jan. 2010.
[18] J.K.Sheu,Y.K.Su,G.C.Chi,P.L.Koh,M.J.Jou,C.M.Chang, C. C. Liu, and W. C. Hung, “High-transparency Ni/Au Ohmic contact to p-type GaN,” Appl. Phys. Lett., vol. 74, no. 16, pp. 2340–2342, Apr. 1999.
[19] J. M. DeLucca, H. S. Venugopalan, S. E. Mohney, and R. F. Karlicek, Jr., “Ohmic contacts formed by physical vapor deposition and electrode- position on p-GaN,” Appl. Phys. Lett., vol. 73, no. 23, pp. 3402–3404, Dec. 1998.
[20] H. Okada, M. Shinohara, Y. Kondo, H. Sekiguchi, K. Yamane, and A. Wakahara, "Investigation of HCl-based surface treatment for GaN devices," in AIP Conference Proceedings, p. 020011, 2016.
[21] H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamasaki, S. Nagai, J. Umezaki, et al., "Effects of surface treatments and metal work functions on electrical properties at p- GaN/metal interfaces", J. Appl. Phys., vol. 81, no. 3, pp. 1315-1322, 1997.
[22] J.-M. Lee , K.-S. Lee , S.-J. Park . Removal of dry etch damage in p-type GaN by wet etching of sacrificial oxide layer. J. Vac. Sci. Technol. B , 2 , 479 – 482.
[23] D. S. Rawal, H. K. Malik, V. R. Agarwal, A. K. Kapoor, B. K. Sehgal and R. Muralidharan, BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask," in IEEE Transactions on Plasma Science, vol. 40, no. 9, pp.2211-2220, Sept. 2012.
[24] T. Wu, Z.-B. Hao, G. Tang and Y. Luo, " Dry etching characteristics of AlGaN/GaN heterostructures using inductively coupled H 2 /Cl 2 Ar/Cl 2 and BCl 3 /Cl 2 plasmas ", Japanese J. Appl. Phys., vol. 42, no. 3, pp. 257-259, 2003.
[25] J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi and H. Iwai, " Dry etching characteristics of TiN film using Ar/CHF 3 Ar/Cl 2 and Ar/BCl 3 gas chemistries in an inductively coupled plasma ", J. Vac. Sci. Technol. B Microelectron., vol. 21, no. 8, pp. 2163-2168, Sep. 2003.
[26] W. Beinvogl, H. R. Deppe, R. Stokan and B. Hasler, "Plasma etching of polysilicon and Si3N4in SF6with some impact on MOS device characteristics," in IEEE Transactions on Electron Devices, vol. 28, no. 11, pp. 1332-1337, Nov. 1981. [27] P. Ho, J. E. Johannes, R. J. Buss and E. Meeks, "Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide with comparisons to etch rate and diagnostic data", J. Vac. Sci. Technol. A, vol. 19, no. 5, pp. 2344-2360, 2001.
[28] S. J. Pearton, "Ion implantation for isolation of III-V semiconductors", Mater. Sci. Rep., vol. 4, pp. 315-367, 1990.
[29] T. Hsieh et al., "Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS- HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer," in IEEE Electron Device Letters, vol. 35, no. 7, pp. 732-734, July 2014.
[30] A. Oritiz-Conde, F. J. G. Sanchez, J. J. Liou, A. Cerdeira, M. Estrada and Y. Yue, "A review of recent MOSFET threshold voltage extraction methods", Microelectron. Reliab., vol. 42, pp. 583-596, 2002.
[31] C. Zhou, W. Chen, E. L. Piner and K. J. Chen, "AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability," in Electronics Letters, vol. 46, no. 6, pp. 445-447, 18 March 2010.
[32] M. Denais et al., "Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide," in IEEE Transactions on Device and Materials Reliability, vol. 4, no. 4, pp. 715-722, Dec. 2004.
[33] P.-C. Chou, T.-E. Hsieh, S. Cheng, J. A del Alamo and E. Y. Chang, "Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications", Semicond. Sci. Technol, vol. 33, no. 5, Apr. 2018.

2026-03-30公開

簡易檢索 / 詳目顯示

相關論文