本論文分為三個部分，首先介紹SmVO4-2MgO及NdVO4-2MgO系列之低損耗介電陶瓷材料，接著介紹Ba2Li3Nd3Mo8O32低溫燒結陶瓷，最後則是濾波器模擬和實作分析。
第一部分，由EDS和視密度分析結果，可得知本實驗合成之材料為LnVO4-2MgO而非Mg2LnVO6 (Ln = Sm, Nd)。SmVO4-2MgO燒結在1110"℃" 持溫4小時，擁有最佳的微波介電特性εr ~ 11.0, Q × f ~ 74,000 GHz, τf ~ –64.9 ppm/°C；NdVO4-2MgO燒結在1090"℃" 持溫4小時，其最佳特性為εr ~ 11.2, Q × f ~ 59,600 GHz, τf ~ –72.2 ppm/°C。
第二部分，由XRD以及EDS發現，除了主相Ba2Li3Nd3Mo8O32之外還帶有未知二次相。Ba2Li3Nd3Mo8O32燒結在870"℃" 持溫4小時，有其最佳介電特性εr ~ 13.1, Q × f ~ 11,500 GHz, τf ~ +4.1 ppm/°C，並且因其燒結溫度小於950"℃" ，有作為LTCC材料之潛力。
最後，在第三部分，我們以HFSS模擬濾波器電路，並將電路實作於FR4、Al2O3以及Ba2Li3Nd3Mo8O32基板上，由結果可以發現，高的介電常數能使電路面積縮小，與另外兩基板材料相比，使用Ba2Li3Nd3Mo8O32作為基板會有最小尺寸。

LnVO4-2MgO (Ln = Sm, Nd) and Ba2Li3Nd3Mo8O32 ceramics were prepared by conventional solid-state reaction. The SmVO4-2MgO ceramic sintered at 1110"℃" for 4h shows microwave dielectric properties of εr ~ 11.0, Q × f ~ 74,000 GHz and τf ~ –64.9 ppm/"℃" ; the NdVO4-2MgO ceramic sintered at 1090"℃" for 4h shows that of εr ~ 11.2, Q × f ~ 59,600 GHz and τf ~ –72.2 ppm/"℃" . The Ba2Li3Nd3Mo8O32 ceramics sintered at 870"℃" for 4h has good properties of εr ~ 13.1, Q × f ~ 11,500 GHz, τf ~ +4.1 ppm/"℃" and may be a candidate for the LTCC use. In addition, a square-loop SIR structure was used as a prototype of dual-band bandpass filter and the Ba2Li3Nd3Mo8O32 dielectric was made into the substrate in practice. Results show that filter of Ba2Li3Nd3Mo8O32 substrate has the smallest filter size compared with filters of FR4 and Al2O3 substrates.

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