在射頻接收器前端電路中，包含低雜訊放大器與混頻器。低雜訊放
大器為訊號被接收後的第一級，將接收後的訊號加以放大並減少雜訊，
增加訊號傳輸的正確性，之後，訊號傳送至混頻器與本地振盪器所產生
的本地訊號加以混頻，最後，產生的中頻訊號傳送至後段電路的數位系
統調變。
在本論文中，學生將提出數個射頻前端電路中的低雜訊放大器之設
計，包含以下電路 : 應用在WiMAX 系統，使用切換式電感之多頻帶低雜
訊放大器、應用在WiMAX 系統之雙頻電流在利用低雜訊放大器、應用在
WiMAX 系統，使用主動式回授之雙頻低雜訊放大器。
應用在WiMAX 系統，使用切換式電感之多頻帶低雜訊放大器，在輸
出入匹配分別使用Source-Follow 和Common Gate 架構，達到寬頻效果。
電路中，使用切換式電感，切換三個不同的頻帶，因面積的考量，將三
個電感結合，以減少晶片面積。在2.3~2.7、3.3~3.8 和5.1~5.8 GHz 的S11
與S22 低於-10dB，增益為13.4~16.8dB，雜訊指數為3.1~3.7dB，P1dB 與IIP3
分為-17dBm 以上與-28dBm 以上，消耗功率為8mW。
應用在WiMAX 系統之雙頻電流在利用低雜訊放大器，在輸出入匹配
皆使用雙頻架構之LC 共振，達到雙頻的效果。本架構在中間級使用切換
式電感，切換所需要之頻率。在2.3~2.7 和5.1~5.8 GHz 的S11 與S22 低於
-10dB，增益分為17 和14.5dB，雜訊指數分別為3.4 和3.5dB，P1dB 分為-16
和-15dB，IIP3 分別為-8 和-6dBm，消耗功率為8.1mW。
II
應用在WiMAX 系統，使用主動式回授之雙頻帶低雜訊放大器，本架
構使用主動式回授與分壓的方式加以改善雜訊與線性度。在2.3~2.7 和
5.1~5.8 GHz 的S11 與S22 低於-9dB，增益分為16.4 和14.4dB，雜訊指數分
別為3 和3.7dB，P1dB 分為-13 和-10dB，IIP3 分別為-2 和-3dBm，消耗功率
為8.7mW。
本論文中之電路設計是以TSMC 0.18um CMOS 製程之進行模擬，並透
過CIC 之申請下線，完成晶片之製作。

In a radio-frequency front-end receiver, it includes low noise amplifier,
oscillator, and mixer. A low noise amplifier is the first stage of a receiver. It
can amplify the received signal and reduce the noise of whole system in order
to improve the accuracy of transmission. The amplified signal will be mixed
with a local signal in a mixer and then be down-converted into an
intermediate-frequency signal.
In this thesis, the primary research focuses on the design of low noise
amplifiers for WiMAX applications. They include a multi-band low-noise
amplifier using switching inductors, a dual-band current-reused low noise
amplifier and a dual-band low noise amplifier using biasing circuit of active
feedback.
A multi-band low-noise amplifier using switching inductors for WiMAX
applications is a cascaded circuit which input is a common-gate stage. That
means that this circuit consists of two common-gate circuits. In the circuit, the
configuration of switching inductors is composed of three inductors in series.
The two inductors in the configuration can individually be switched on or off
in order to operate in three frequency bands. S11 and S22 at 2.3~2.7, 3.3~3.8
and 5.1~5.8 GHz are lower than -10 dB. Gains are between 13.4 and 16.8 dB.
The circuit has P1dB greater than -18 dBm, IIP3 greater than -27 dBm for the
operation of the two frequency bands. The power consumption is 8 mW.
A dual-band current-reused low noise amplifier for WiMAX applications
uses LC resonating networks at input and output to simultaneously arrive at
the matching of reflection coefficient. S11 and S22 at 2.3~2.7 and 5.1~5.8
IV
GHz are lower than -10 dB. Maximum gains are 17 and 14.5 dB for the two
frequency bands, respectively. The circuit has P1dB greater than -16 dBm,
IIP3 greater than -8 dBm for the operation of the two frequency bands. The
power consumption is 8.1 mW.
A dual-band low noise amplifier using active feedback for WiMAX
applications is a current-reused configuration like as the chip mentioned
previously. The active feedback circuit is used to bias the amplifier and
implement the input matching simultaneously. In addition, a voltage divider at
the gate of the cascoding MOSFET is used to improve the noise and linearity.
S11 and S22 at 2.3~2.7 and 5.1~5.8 GHz are lower than -9 dB. Maximum
gains are 16.4 and 14.4 dB for the two frequency bands, respectively. The
circuit has P1dB greater than -13 dBm, IIP3 greater than -3 dBm for the
operation of the two frequency bands. The power consumption is 8.7 mW.
The design of these circuits is based on the TSMC 0.18μm CMOS
process. These chips have been fabricated by the support of CIC in Taiwan.
The second circuit topology has been measured.

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