本論文以超音波噴霧熱裂解沉積法製備底閘極微結晶型鋅錫氧化物薄膜電晶體。本篇探討超音波噴霧熱裂解沉積法與鋅錫氧化物之優勢所在：在薄膜電晶體的應用與需求日益增加下，如何使用環境永續、降低生產成本的製作方式會是一個重要的研究方向。本篇中元件最佳電性為：操作在線性區時，元件可達到場效電子遷移率 68.19 cm^2/V-s、開關比~10^7、次臨界擺幅 96.81 mV/dec 與臨界電壓(定電流法) 0.07 V；在飽和區，場效電子遷移率 123.56 cm^2/V-s、開關比~10^6、次臨界擺幅 192.39 mV/dec、臨界電壓(定電流法) 0.21 V 與(切線法) 0.33 V。

In this thesis, the bottom-gate nanocrystalline zinc-tin oxide thin film transistors were fabricated by ultrasonic spray pyrolysis deposition (USPD). This article introduces the advantages of ultrasonic spray pyrolysis deposition and zinc tin oxide: As application and demand increase for thin-film transistors, how to use environmentally sustainable fabrication methods and reduce production costs will be an important research direction. The optimal electrical performance of the device in this thesis is: when operating in the linear region, the device can reach field-effect electron mobility (μeff,lin) of 68.19 cm^2/V-s, an on-off ratio (Ion/Ioff) of ~10^7, subthreshold swing (S.S.) of 96.81 mV/dec, and a threshold voltage (constant current method)(Vth) 0.07 V; in the saturation region, the field-effect electron mobility (μeff,sat) of 123.56 cm^2/V-s, an on-off ratio of ~10^6, the subthreshold swing of 192.39 mV/dec, the threshold voltage (constant current method) (Vth) of 0.21 V and (tangent method)(Vth,tangent) 0.33 V

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