| 研究生: |
廖彩攸 Liao, Tsai-Yu |
|---|---|
| 論文名稱: |
共濺鍍系統成長複合型Zn-In-Sn-O (ZITO)薄膜之結晶與光電特性研究 The crystallization and optoelectronic properties on co-sputtering synthesized compound Zn-In-Sn-O (ZITO) thin films |
| 指導教授: |
張守進
Chang, Shoou-Jinn |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
| 論文出版年: | 2011 |
| 畢業學年度: | 99 |
| 語文別: | 英文 |
| 論文頁數: | 87 |
| 中文關鍵詞: | 共濺鍍系統 、氧化鋅銦錫薄膜 |
| 外文關鍵詞: | co-sputtering system, compound Zn-In-Sn-O (ZITO) thin films |
| 相關次數: | 點閱:96 下載:4 |
| 分享至: |
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本論文之主要是利用共濺鍍系統成長複合型氧化鋅銦錫薄膜,透過調變氧化鋅及銦錫氧化物的比例以及氧氣濃度得到不同功能性的薄膜,根據其結晶性與光電特性將複合型氧化鋅銦錫薄膜分為透明導電薄膜及非晶薄膜,進而應用於不同光電元件 。在透明導電薄膜部分,為更進一步提升薄膜的電導特性,嵌入銦金屬層並在不同溫度(400℃ 和600℃)下進行熱處理。研究結果顯示,有嵌入銦金屬層的透明導電薄膜其電導特性明顯優於未嵌入銦金屬層的薄膜。由於熱處理造成的銦原子的熱擴散機制是提升薄膜的電導率的主要原因。另外,透過電漿離子轟擊可以在短時間(20分鐘以內)及較低的溫度(200 ℃以下)下改善薄膜電性與降低表面粗糙度,更有助於提升薄膜與基板間的介面穩定性。
另一向研究主題主要是針對非晶氧化鋅銦錫薄膜及將其應用於電晶體。透過不同氧氣濃度調變非晶氧化鋅銦錫電特性,並取其位於半導體區特性之樣本,運用於薄膜電晶體。實驗結果顯示,氧氣濃度在9 %下[氧氣/(氮氣+氧氣)]非晶氧化鋅銦錫薄膜具有較佳的半導體特性,且所製作的薄膜電晶體具有良好開關特性,可與液晶顯示器結合,應用於光電顯示元件領域等上。
In present study, the compound Zn-In-Sn-O (ZITO) thin films were deposited using the co-sputtering system. By adjusting the content ratio of ZnO and ITO, or by altering the oxygen partial pressure, the multifunctional thin films will be obtained. Through the analysis of the crystallization and electric properties, a transparent conductive ZITO (c-ZITO) films and an amorphous ZITO (a-ZITO) films were formed, and these films can be further used in the different optoelectronic devices.
For the transparent conductive oxide (TCO) thin films, the indium layer was embedded in the interface between the ZITO film and glass substrate, and then annealed at different temperature (400℃ and 600℃) to enhance the conductivity of ZITO films. The results showed that ZITO films had higher conductivity because the indium atoms diffused into the ZITO film by thermal diffusion mechanism. In addition, the ZITO films were treated by plasma ions bombarding to improve the electrical properties, decrease surface roughness and promote the stability of the film under lower temperature manufacture (< 200℃) for a short time (< 20 minutes).By varying the mix gas ratio of argon and oxygen, we changed the optoelectronic and structural properties of a-ZITO films. Then, a-ZITO was applied in thin film transistors (TFTs). The results showed that a-ZITO with oxygen gas ratio of 9% had better semiconductor properties, and its application in TFT had good switch characteristic. The a-ZITO TFT can be combined with liquid crystal displays and provided appropriate applications in optoelectronic display devices.
[1] W. E. Spear and P. G. Le Comber, “Substitutional doping of amorphous silicon,”Solid State Communications, vol. 17, pp. 1193–1196, 1975.
[2] H. Hosono, “Ionic amorphous oxide semiconductors: Material design,carrier transport, and device application”Journal of Non-Crystalline Solids, vol.352, pp. 851–858, 2006.
[3] K. Nomura, A. Takag, T. Kamiya, H. Ohta, M. Hirano and H. Hosono, “Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors,”Japanese Journal of Applied Physics, Vol. 45, pp. 4303–4308, 2006.
[4] L. Zhang, H. Zhang, Y. Bai, J. W. Ma, J. Cao, X. Y. Jiang, Z. L. Zhang, “Enhanced performances of ZnO-TFT by improving surface properties of channel layer,”Solid State Communications, vol. 146 , pp. 387–390, 2008.
[5] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,”Nature, vol.432, pp. 489–491, Nov. 2004.
[6] O. K.Varghese, M. Paulose, C. A. Grimes, “Long vertically aligned titania nanotubes on transparent conducting oxide for highly efficient solar cells,”Nature Nanotechnology, vol. 4, 592-597, 2009.
[7] M. Law, L. E. Greene, J. C. Johnson, R. Saykally, P. Yang, “Nanowire dye-sensitized solar cells,”Nature Materials , vol. 4, pp. 455-459, 2005.
[8] Chopra K. L., Major S. and Pandya D. K., “Transparent conductors—A status review,”Thin Solid Films, vol. 102,pp. 1-46, 1983.
[9] B.Y. Oh, M. C. Jeong, D. S. Kim, W. Lee, J. M. Myoung, “Post-annealing of Al-doped ZnO films in hydrogen atmosphere,”Journal of Crystal Growth, vol.281, pp. 475–480, 2005.
[10] K. Matsubara, P. Fons, K. Iwata, A. Yamada, K. Sakurai, H. Tampo and S. Niki, “ ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications,”Thin Solid Films, vol.431-432, pp. 369-372 ,2003.
[11] M.F.A.M. van Hest, M.S. Dabney, J.D. Perkins, D.S. Ginley, and M.P. Taylor, “Titanium-doped indium oxide: A high-mobility transparent conductor,”Applied Physics Letters, vol. 87, pp. 032111, 2005.
[12] H. M. Ali, H. A. Mohamed, and S. H. Mohamed, Eur, “Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique,”Journal of Applied Physics, vol. 31, pp. 87-93, 2005.
[13] H. Yue1, A. Wu, J. Hu, X. Zhang, T. Li, “Relationship between structure and functional properties of the ZnO:Al thin films,”Materials Science Forum, Vols. 675-677, pp 1275-1278, 2011.
[14] S. S. Lin, J. L. Huang, P. Sajgalik, “The properties of heavily Al-doped ZnO films before and after annealing in the different atmosphere,”Surface and Coatings Technology, vol.185, pp. 254–263, 2000.
[15] J. H. Lee, S. Y. Lee, B. O. Park, “Fabrication and characteristics of transparent conducting In2O3–ZnO thin films by ultrasonic spray pyrolysis,”Materials Science and Engineering B, vol. 127, pp. 267–271, 2006.
[16] R. AlAsmar, S. Juillaguet, M. Ramonda, A. Giani, P. Combette, A. Khoury, A. Foucaran, “Fabrication and characterization of high qualityundoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique,”Journal of Crystal Growth, vol. 275, pp. 512–520, 2005.
[17] Y. Zhang, J. He, Z. Ye, L. Zhou, J. Huang, L. Zhu, B. Zhao, “Structural and photoluminescence properties of Zn0.8Mg0.2O thin films grown on Si substrate by pulsed laser deposition,”Thin Solid Films, vol. 458 ,pp. 161–164, 2004.
[18] S. T. Shishiyanu, Teodor S. Shishiyanu, Oleg I. Lupan, “Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor,”Sensors and Actuators B, vol. 107, pp. 379–386, 2005.
[19] B. Y. Oh, M. C. Jeong, W. Lee, and J. M. Myoung, ‗‗Properties of Transparent Conductive ZnO Al Films Prepared by Co-Sputtering,‘‘ Journal of Crystal Growth, vol. 274, pp. 453–457, 2005.
[20] K. L. Chopra, S. Major, and D. K. Pandya, “Transparent conductors-A status review,”Thin Solid Films, vol. 102, pp. 1-46, 1983.
[21] A. L. Dawar and J. C. Joshi, “Semiconducting transparent thin films,”Journal of Materials Science, vol. 19, pp. 1–23, 1984.
[22] T. Minami, “Transparent and conductive multicomponent oxide films prepared by magnetron sputtering,”Journal of Vacuum Science & Technology A, Vol. 17, pp. 1765-1772, 1999.
[23] T. Minami, H. Sato and H. Nanto, “Group Ⅲ Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering,”Japanese Journal of Applied Physics, vol. 24, pp. L781-L784, 1985.
[24] J. H. Park, K. J. Ahn, K. I.Park, S. I. Na and H. K. Kim, “An Al-dopedZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics ,”Journal of Physics D: Applied Physics, Vol. 43, pp. 115101-115107, 2010.
[25] H. Enoki, T. Nakayama, J. Echigoya, “The Electrical and Optical Properties of t he ZnO2SnO2 Thin Films Prepared by RF Mag2 net ron Sputtering,”Physica Status Solid A, vol. A129 . pp. 181-191, 1992.
[26] H. Un'no, N. Hikuma, T. Omata, N. Ueda, T. Hashimoto and H. Kawazoe, “Preparation of MgIn2O4 thin films on glass substrate by RF-sputtering‖, Japanese Journal of Applied Physics, vol. 32, pp. L1260-1262, 1993.
[27] T. Minami, H. Sonohara, T. Kakumu, and S. Takata, “Highly transparent and conductive Zn2In2O5 thin films prepared by rf magnetron sputtering,”Japanese Journal of Applied Physics, vol.34, pp. L971-974, 1995.
[28] T. Minami, Y. Takeda, S. Takata, T. Kakumu, “Preparation of transparent conducting In4Sn3O12 thin films by DC magnetron sputtering,”Thin Solid Films, vol. 13, pp. 308-309, 1997.
[29] T. Minami, “Present Status of Transparent Conducting Oxide Thin-Film Development for Indium-Tin-Oxide (ITO) Substitutes‖, Thin Solid Films, Vol. 516, pp. 5822-5828, 2008.
[30] Y. Shigesato, D. C. Paine, and T. E. Haynes: Adv. Mater. (Weinheim, Ger.) 4, pp. 503,1994.
[31] J. Cui, A. Wang, N. L. Edleman, J. Ni, P. Lee, N. R. Armstrong, and T. Marks: Adv. Mater. (Weinheim, Ger.) 13, pp. 1476, 2001.
[32] Y. Park, V. Choong, Y. Gao, B. R. Hsieh, and C. W. Tang, “Work function of indium tin oxide transparent conductor measured by photoelectronspectroscopy,”Applied Physics Letters, vol.68, p.2699-2701, 1996.
[33] D.H Kim, M.R. Park, H.J. Lee and G.H. Lee, “Thickness dependence of electrical properties of ITO film deposited on a plastic substrate by RF magnetron sputtering‖, Applied Surface Science, vol.253, pp.409-411, 2006.
[34] H. K. Kim, J. H. Bae, J. M. Moon, S. W. Kim, S. W. Jeong, D. G. Kim, and J. W. Kang, “Characteristics of Amorphous Indium Zinc Oxide Anode Films on Polycarbonate Substrate for Flexible Organic Light Emitting Diode,”Solid State Phenomena, vol. 399, pp. 124-126, 2007.
[35] J. H. Bae, J. M. Moon, J. W. Kang, H. D. Park, J. J. Kim, W. J. Cho, and H. K. Kim, “Transparent, Low Resistance, and Flexible Amorphous ZnO-Doped In2O3 Anode Grown on a PES Substrate,”Journal of The Electrochemical Society, vol. 154, pp. J81-J85, 2007.
[36] C. W. Ow-Yang, H. Y. Yeom, D. C. Paine, ‖Fabrication of transparent conducting amorphous Zn-Sn-In-O thin films by direct current magnetron sputtering,”Thin Solid Films, vol. 516, pp. 3105-3111, 2008.
[37] D. S. Liu, C. S. Sheu, C. T. Lee, and C. H. Lin, “Thermal Stability of Indium Tin Oxide Thin Films Co-sputtered with Zinc Oxide,”Thin Solid Films, vol. 516, pp.3196-3203, 2008.
[38] H. Hosono, N. Kikuchi, N. Ueda and H. Kawazoe, “Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples.”Journal of Non-Crystalline Solids, vol.198–200, pp. 165–169, 1996.
[39] M. Orita, H. Ohta and M. Hirano, “Amorphous transparent conductive oxide‖, Philosophical Magazine, vol.81, pp. 501-515, 2001.[40] N. F. Mott, “Silicon dioxide and the chalcogenide semiconductors; similarities and differences.”Advances in Physics, vol. 26, pp. 363–391, 1977.
[41] M. Orita and M. Hirano, “Electronic structure and transport properties in the transparent amorphous oxide semiconductor 2CdO•GeO2.”Physical Review B, vol. 66, 35203, 2002.
[42] C. S. Yang, L. L. Smith, C. B. Arthur, and G. N. Parsons, “Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates,”Journal of Vacuum Science & Technology B, vol. 18, pp. 683–689, 2000.
[43] E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L.Pereira and R. Martins, “Fully transparent ZnO thin-film transistor produced at room temperature”Advanced Materials, vol. 17, pp. 590-594, Mar. 2005.
[44] J. H. Shin, J. S. Lee, C. S. Hwang, S. H. K. Park, W. S. Cheong, M. Ryu, C.-W. Byun, J. I. Lee and H. Y. Chu, “Light effects on the bias stability of transparent ZnO thin film transistors,”ETRI Journal, vol. 31, pp. 62–64, 2009.
[45] B. Yaglioglu, H. Y. Yeom, R. Beresford and D. C. Paine, “High-mobility amorphous In2O3-10 wt% ZnO thin film transistors,”Applied Physics Letters, vol. 89, p. 062103, Aug. 2006.
[46] Y. L. Wang , F. Ren , W. Lim , D. P. Norton , S. J. Pearton , I. I. Kravchenko and J. M. Zavada, “Room temperature deposited indium zinc oxide thin film transistors,”Applied Physics Letters, vol. 90, p.232103 , 2007.[47] W. B. Jackson, R. L. Hoffman and G. S. Herman, “High-performance flexible zinc tin oxide field-effect transistors,”Applied Physics Letters, vol. 87, p. 193 503, Nov. 2005.
[48] H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong and D. A. Keszler, “High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer‖, Applied Physics Letters, vol. 86, pp. 013503, (2005).
[49] M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo and H. D. Kim, “High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper,”Applied Physics Letters, vol. 90, pp. 212114, 2007.
[50] J. S. Park, J. K. Jeong, Y. G. Mo and H. D. Kim, “Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment‖, Applied Physics Letters, vol. 90, pp. 262106, 2007.
[51] H. Xiao, “Introduction to semiconductor manufacturing technology‖, Princeton-Hall Inc., New Jersey, 2001.
[52] Y. K. Moon, S. Lee, D. H. Kim, D. H. Lee, C. O. Jeong, and J. W. Park, “Application of DC Magnetron Sputtering to Deposition of InGaZnO Films for Thin Film Transistor Devices,”Japanese Journal of Applied Physics 48, pp. 031301-1 – 031301-4, 2009.
[53] R. Navamathavan, J. H. Lim, D. K. Hwang, B. H. Kim, J. Y. Oh, J. H. Yang, H. S. Kim and S. J. Park, “Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering,”Journal of the Korean Physical Society, Vol. 48, pp. 271-274, 2006.
[54] E. Fortunato, A. Pimentel, L. Pereira, A. Gonc_alves, G. Lavareda, H.Aguas, I. Ferreira, C.N. Carvalho, R. Martins, “High field-effect mobility zinc oxide thin film transistors produced at room temperature,”Journal of Non-Crystalline Solids, vol. 338–340, pp. 806–809, 2004.
[55] J. Kim, J. H. Yun, S. W. Jee, Y. C. Park, M. Ju, S. Han, Y. Kim, J. H. Kim, W. A. Anderson, J. H. Lee and J. Yi, “Rapid thermal annealed Al-doped ZnO film for a UV detector”Materials Letters, vol. 65, pp. 786–789, 2011.
[56] C. Liu, Q. Chen, J. Jiao, S. Li, J. Hu and Q. Li, “Surface modification of indium tin oxide films with Au ions implantation: Characterization and application in bioelectrochemistry.”Surface & Coatings Technology, vol. 205, pp. 3639–3643, 2011.
[57] Jin-Seong Park, Jae Kyeong Jeong,a_ Yeon-Gon Mo, and Hye Dong Kim, “Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment,”Applied Physics Letters, vol. 90, pp. 262106-1 -262106-3,2007.
[58] T. Schuler and MA. Aegerter, “Optical, electrical and structural properties of sol gel ZnO:Al coatings,”Thin Solid Films, vol.351, pp. 125-131,1999.
[59] B. Z. Dong, G. J. Fang, J. F. Wang, W. J. Guan and X. Z. Zhao, ‖Effect of Thickness on Structural, Electrical, and Optical properties of ZnO: Al Films Deposited by Pulsed Laser Deposition,”Journal of Applied Physics, vol. 101,pp. 033713-1- 033713-7, 2007.
[60] J. Kim, J. H. Yun , S. W. Jee , Y. C. Park , M. Ju, S. Han, Y. Kim, J. H. Kim, W. A. Anderson, J. H. Lee, J. Yi, “Rapid thermal annealed Al-doped ZnO film for a UV detector,”Materials Letters, vol. 65, pp. 786–789, 2011.
[61] B. D. Ahn, H. S. Shin, G. H. Kim, J. S. Park and H. J. Kim, “A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition" Japanese Journal of Applied Physics, vol. 48, pp.03B019, 2009.
[62] M. Maaza, O. Nemraoui, A.C. Beye, C. Sella and T. Derry, “Induced structural damages by He+ irradiation in conducting transparent indium–tin oxide thin films,”Solar Energy Materials & Solar Cells, vol. 90, pp. 111–119, 2006.
[63] K. L. Chopra, S.Major and D. K. Pandya, “Transparent conductors—a status review,”Thin Solid Films, vol. 102, pp. 1-46, 1983.
[64] Y. Niidome, H. Hisanabe, T. Kawasawa, S. Yamada, “Deposition of indium oxide thin films assisted by gold nanoparticles in cyclohexane,”Thin Solid Films, vol. 513, pp.60-63, 2006.
[65] L. Wang, W. Mao, D. Ni, J. Di, Y. Wu, Y. Tu, “Direct electrodeposition of gold nanoparticles onto indium/tin oxide film coated glass and its application for electrochemical biosensor‖, Electrochemistry Communications, vol. 10, pp.673–676, 2008.
[66] M. C. Daniel and D. Astruc, “Gold nanoparticles: assembly, supramolecular chemistry, quantum-size-related properties, and applications toward biology, catalysis, and nanotechnology,”Chemical reviews, vol. 104(1), pp. 293-346, 2004.
[67] B. Ballarin, M.C. Cassani, E. Scavetta and D. Tonelli, “˝Self-assembled gold nanoparticles modified ITO electrodes: The monolayer binder molecule effect˝”Electrochimica Acta, vol. 53, pp. 8034-8044, 2008.
[68] H. Zhang, H. Lu, N. Hu, “Fabrication of Electroactive Layer-by-LayerFilms of Myoglobin with Gold Nanoparticles of Different Sizes,”Journal of Physical Chemistry B, vol. 110, pp. 2171-2179, 2006.
[69] M. Oyama, A. Orimo, K. Nouneh; “Effects of linker molecules on the attachment and growth of gold nanoparticles on indium tin oxide surfaces”Electrochemica Acta, Vol 54, pp.5042-5047, 2009.
[70] J. Wang, L. Wang, J. Di, Y. Tu, “Disposable biosensor based on immobilization of glucose oxidase at gold nanoparticles electrodeposited on indium tin oxide electrode,”Sensors Actuators B, vol. 135, pp.283-291, 2008.
[71] J. Wang, L. Wang, J. Di, Y. Tu, “ Electrodeposition of gold nanoparticles on indium/tin oxide electrode for fabrication of a disposable hydrogen peroxide biosensor,”Talanta, vol. 77(4), pp. 1454-1459, 2009.
[72] V.G. Praig, G. Piret, M. Manesse, X. Castel, R. Boukherroub, S. Szunerits, “Seed-mediated electrochemical growth of gold nanostrucutures on indium tin oxide thin films,”Electrochemica Acta, vol. 53 (27), pp. 7838-7844, 2008.
[73] C. Liu, Q. Chen, J. Jiao, S. Li, J. Hu and Q. Li, “Surface modification of indium tin oxide films with Au ions implantation: Characterization and application in bioelectrochemistry,”Surface & Coatings Technology, vol. 205, pp. 3639–3643, 2011.
[74] T. Xu, S. Yang, J. Lu, Q. Xue, J. Li, W. Guo, Y. Sun, “Characterization of nanocrystalline diamond films implanted with nitrogen ions”Diamond and Related Materials, vol. 10, pp. 1441-1447, 2001.
[75] G. Battaglin, “Formation and chemical-physical characterization of metallic nanoclusters in ion-implanted silica,”Nuclear Instruments andMethods in Physical. Research Section B, vol. 116, pp. 102-108, 1996.
[76] G. Battaglin, A. Boscolo-Boscoletto, P. Mazzoldi, C. Meneghini, G.W. Arnold, “Gold nanocluster formation in silicate glasses by low fluence ion implantation and annealing,”Nuclear Instruments and Methods in Physics Research B, vol. 116, pp. 527-530,1996.
[77] Z. Dai, S. Yamamoto, K. Narumi, A. Miyashita, H. Naramoto, “Gold nanoparticle fabrication in single crystal SiO2 by MeV Au ion implantation and subsequent thermal annealing”Nuclear Instruments and Methods in Physics Research Section B, vol. 108, pp. 108-112, 1999.
[78] A. Ueda, R. Mu, Y.S. Tung, M. Wu, W.E. Collins, D.O. Henderson, C.W. White, R.A. Zuhr, J.D. Budai, A. Meldrum, P.W. Wang, X. Li, “Interaction of Fn centers with gold nanocrystals produced by gold ion implantation in MgO single crystals,”Nuclear Instruments and Methods in Physics Research Section B, vol. 141, pp. 261-267, 1998.
[79] J. Pla, M. Tamasi, R. Rizzoli, M. Losurdo, E. Centurioni, C. Summonte and F. Rubinelli, “Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells,”Thin Solid Films vol. 425 , pp. 185–192, 2003.
[80] H. H. Yu, S. J. Hwang and K. C. Hwang, “Preparation and Characterization of a. Novel Flexible Substrate for OLED‖, Optics Communications, vol.248, pp.51-57, 2005.
[81] Y. H. Tak, K. B. Kim, H. G. Park, K. H. Lee, and J. R. Lee, “Criteria for ITO (Indium-Tin-Oxide) Thin Film as the Bottom Electrode of an Organic Light Emitting Diode,”Thin Solid Films, Vol. 411, pp. 12-16, 2002.
[82] X. Huang, N. Tsuji, N. Hansen, Y. Minamino, “Microstructural evolution during accumulative roll bonding of commercial purity aluminum,‖Material Science & Engineering, vol. A340, pp.265-271, 2003.
[83] T. Minami, “Present Status of Transparent Conducting Oxide Thin-Film Development for Indium-Tin-Oxide (ITO) Substitutes,”Thin Solid Films, vol. 516, pp. 5822-5828, 2008.
[84] T. Minami and T. Miyata, “Present status and future prospects for development of non- or reduced-indium transparent conducting oxide thin films.”Thin Solid Films, vol. 517, pp.1474-1477, 2008.
[85] J. George and C. S. Menon, “Electrical and optical properties of electron beam evaporated ITO thin films,”Surface and Coatings Technology, vol. 132, pp.45-48, 2000.
[86] H. Izumi, F.O. Adurodija, T. Kaneyoshi, T. Ishihara, H. Yoshioka and M. Motoyama, “Electrical and Structural Properties of Indium Tin Oxide Films Prepared by Pulsed Laser Deposition,”Journal of Applied Physics, vol. 91, pp. 1213-1218, 2002.
[87] C. Y. Lo, C.L. Hsu, Q. X. Yu, H. Y. Lee, and C. T. Lee, “Investigation of transparent and conductive undoped Zn2In2O5–x films deposited on n-type GaN layers,”Journal of Applied Physics, vol. 92, pp. 274-280, 2002.
[88] H. Kim, C. M. Gilmore, J. S. Horwitz, A. Pique, H. Murata, G. P. Kushto, R. Schlaf, Z. H. Kafafi and D. B. Chrisey, “Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices,”Applied Physics Letters, vol. 76, pp.259-261, 2000.
[89] H. M. Kim, S. K. Jung, J. S. Ahn, Y. J. Kang and K. C. Je, “Electrical and optical properties of In2O3–ZnO films deposited on polyethylene terephthalate substrates by radio frequency magnetron sputtering,”Japanese Journal of Applied Physics, vol. 42, pp.223-227, 2003.
[90] T. Moriga, D. D. Edwards, T. O. Mason, G. B. Palmer, K. R. Poeppelmeier, J. L. Schindler, C. R. Kannewurf and I. Nakabayashi, “Phase Relationships and Physical Properties of Homologous Compounds in the Zinc Oxide-Indium Oxide System,”Journal of the American Ceramic Society, vol.81, pp.1310-1316, 1998.
[91] T. Minami, T. Kakumu, S.Tanaka ,”Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering”Journal of Vacuum Science & Technology ,vol. A14, pp.1704-1708, 1996.
[92] H. Hiramatsu, W.S. Seo, K. Koumoto, “Electrical and Optical Properties of Radio-Frequency-Sputtered Thin Films of (ZnO)5In2O3 ,”Chemistry of Materials, vol. 10, pp. 3033-3039, 1998.
[93] D. S. Liu, C. C. Wu, and C. T. Lee, “A Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System at Room Temperature,”Japanese Journal of Applied Physics, vol. 44 , pp. 5119-5121, 2005.
[94] H. Xiao, “Introduction to semiconductor manufacturing technology‖, Princeton-Hall Inc., New Jersey, 2001.
[95] D. S. Liu, C. H. Lin, B. W. Huang and C. C. Wu “Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature,”Japanese Journal of Applied Physics, vol. 45, pp. 3526–3530, 2006.
[96] T. Minami, T. Yamamoto, Y. Toda and T. Miyata, “Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering‖, Thin Solid Films, vol. 373, pp. 189-194, 2000.
[97] M. S. Hwang, H. S. Jeong, W. M. Kim and Y. W. Seo, “Properties ofCo-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source,”J. Vac. Sci. Technol., vol. A 21, pp. 1399, 2003.
[98] B. Yaglioglu, Y. J. Huang, H. Y. Yeom and D. C. Paine, “A study of amorphous and crystalline phases in In2O3–10 wt.% ZnO thin films deposited by DC magnetron sputtering,”Thin Solid Films, vol. 496, pp. 89 – 94, 2006.
[99] J. M. Lee, K. K. Kim, S. J. Park, and W. K. Choi, “Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO,”Applied Physics Letters, vol. 78, pp. 3842-3844, 2001.
[100] M. Orita and M. Hirano, “Electronic structure and transport properties in the transparent amorphous oxide semiconductor 2CdO•GeO2,”Phys. Rev. B, vol. 66, 35203, 2002.
[101] C. S. Yang, L. L. Smith, C. B. Arthur, and G. N. Parsons, “Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates,”Journal of Vacuum Science & Technology B, Microelectron. Process. Phenom., vol. 18, pp. 683–689, 2000.
[102] E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L.Pereira and R. Martins, “Fully transparent ZnO thin-film transistor produced at room temperature”Advanced Materials, vol. 17, pp. 590-594, Mar. 2005.
[103] J. H. Shin, J. S. Lee, C. S. Hwang, S. H. K. Park, W. S. Cheong, M. Ryu, C.-W. Byun, J. I. Lee and H. Y. Chu, “Light effects on the bias stability of transparent ZnO thin film transistors,”ETRI J., vol. 31, pp.62–64, Feb. 2009.
[104] B. Yaglioglu, H. Y. Yeom, R. Beresford and D. C. Paine, “High-mobility amorphous In2O3-10 wt% ZnO thin film transistors,”Appl. Phys. Lett.,vol. 89, p. 062103, Aug. 2006.
[105] Y. L. Wang , F. Ren , W. Lim , D. P. Norton , S. J. Pearton , I. I. Kravchenko and J. M. Zavada, “Room temperature deposited indium zinc oxide thin film transistors,”Appl. Phys. Lett., vol. 90, p.232103 , 2007.
[106] W. B. Jackson, R. L. Hoffman and G. S. Herman, “High-performance flexible zinc tin oxide field-effect transistors,”Appl. Phys. Lett., vol. 87, p. 193 503, Nov. 2005.
[107] H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong and D. A. Keszler, “High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer‖, Appl. Phys. Lett., vol. 86, pp. 013503, (2005).
[108] M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo and H. D. Kim, “High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper,”Appl. Phys. Lett., vol. 90, pp. 212114, 2007.
[109] J. S. Park, J. K. Jeong, Y. G. Mo and H. D. Kim, “Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment‖, Appl. Phys. Lett., vol. 90, pp. 262106, 2007.
[110] H. Xiao, “Introduction to semiconductor manufacturing technology‖, Princeton-Hall Inc., New Jersey, 2001.
[111] B. D. Ahn, H. S. Shin, G. H. Kim, J. S. Park and H. J. Kim, “A Novel Amorphous InGaZnO Thin Film Transistor Structure withoutSource/Drain Layer Deposition" Japanese Journal of Applied Physics, vol. 48, pp. 03B019, 2009.
[112] J. Kim, J. H. Yun, S. W. Jee, Y. C. Park, M. Ju, S. Han, Y. Kim, J. H. Kim, W. A. Anderson, J. H. Lee and J. Yi, “Rapid thermal annealed Al-doped ZnO film for a UV detector”Materials Letters, vol. 65, pp. 786–789, 2011.
[113] C. Liu, Q. Chen, J. Jiao, S. Li, J. Hu and Q. Li, “Surface modification of indium tin oxide films with Au ions implantation: Characterization and application in bioelectrochemistry.”Surface & Coatings Technology, vol. 205, pp. 3639–3643, 2011.
[114] D. S. Liu, C. H. Lin, B. W. Huang and C. C. Wu “Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature,”Japanese Journal of Applied Physics, vol. 45, pp. 3526–3530, 2006.
[115] T. Minami, T. Yamamoto, Y. Toda and T. Miyata, “Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering‖, Thin Solid Films, vol. 373, pp. 189-194, 2000.
[116] M. S. Hwang, H. S. Jeong, W. M. Kim and Y. W. Seo, “Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source,”J. Vac. Sci. Technol., vol. A 21, pp. 1399, 2003.
[117] B. Yaglioglu, Y. J. Huang, H. Y. Yeom and D. C. Paine, “A study of amorphous and crystalline phases in In2O3–10 wt.% ZnO thin films deposited by DC magnetron sputtering,” Thin Solid Films, vol. 496, pp.89 – 94, 2006.