本論文描述一個具備單點校正的改良式時域溫度感測器，其具有兩種操作模式：校正模式與一般模式。為了減少傳統時域溫度感測器插入在參考延遲線中的延遲元件的數目或省去一個需要被調整寬度的脈波輸入，所提出之感測器在攝氏 0°C作單點校正，並將其中溫度相依延遲線的架構改成類似可調整參考延遲線的型態。此外，為進一步提高精確度，本論文提出了一種補償晶片之間製程差異的技巧。
本論文基於TSMC 0.18-μm 1P6M 製程所研製之溫度感測器的解析度優於 0.2°C，晶片面積為 0.463 mm2。透過提出的校正技巧，在三個製程角落以及0°C~ 100°C的溫度範圍下，模擬結果顯示最大誤差為-1.1°C~ 1.2°C。在 2Hz的轉換速率下，晶片的平均電流損耗為 9.68 μA。

This thesis presents a modified time-domain temperature sensor with one-point calibration. There are two operation modes for the presented temperature sensor: calibration mode in which the temperature sensor is calibrated and normal mode in which the temperature sensor performs normal function. In order to reduce number of cells inserted in reference delay line or eliminate an additional input pulse with adjustable width in a conventional time-domain temperature sensor, the one-point calibration is done at 0°C ,and the temperature-dependent delay line (TDDL) of the sensor is modified as the structure similar to adjustable reference delay line (ARDL). In addition, a simple technique is also presented to compensate process variation between chips.
The proposed sensor achieves a resolution better than 0.2°C and a chip area of 0.463 mm2 in a TSMC 0.18-μm 1P6M CMOS process. With proposed calibration, a -1.1°C~ 1.2°C inaccuracy over a 0°C~ 100°C temperature operation range has been simulated for three process corners. The sensor’s average current consumption is 9.68 μA at a conversion rate of 2 samples/s.

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