本實驗是將Mn-Co-Cu當作主材料。首先，為了降低燒結溫度，本實驗使用V2O5當作助燒劑。而為了降低其阻值，故加入內電極共燒，並將前兩項變因加入元件，使其擁有降低燒結溫度且同時有低阻值的效能。
加入助燒劑經由比較可發現，加入助燒劑能有效的降低燒結溫度，從原本的1050℃降至1000℃，不過添加的V2O5其熔點為690℃，故做高溫燒結時，V2O5會形成液態玻璃進入晶界，且其導電性差，故會造成阻值上升，Q值上升，而使得B值上升，遷移率下降。
加入內電極的實驗則是利用塊材去模擬，分為有共燒(先塗內電極膏再燒結)與沒共燒(作燒結後再塗銀膏)的塊材，量測其阻值發現有共燒的塊材電阻率較低，經過線掃描的比對，發現共燒的塊材有電極擴散的現象影響其電阻率，造成其遷移率升高，Q值及B值降低。

Mn-Co-Cu is used as main material in our research. In the first, the sintering aids are added to decrease the sintering temperature. In the second, the inner electrode is also added to reduce resistance. Then we add sintering aids and inner electrode to make the components have the foregoing advantages.
Adding sintering aids could decrease sintering temperature from 1050℃ to 1100℃. The melting point of V2O5 is 690℃. According to the above, V2O5 forms liquid glass and liquid glass enters into the grain boundary at high temperature.
The experiment which added inner electrode is using the bulk material to simulate. After it sinters, we find the resistance is lower than non- co-firing material. Then we compare these two with linear scan, and find co-firing bulk’s electrode has the diffusion behavior. The diffusion behavior causes the higher mobility, and the lower Q value and B value.

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