AlGaInP發光二極體大多是成長在n-型GaAs基板上，電流自p層由上而下至主動層以產生光。要得到高發光效率，p層的電流分佈非常重要。為了促進電流分佈以提高發光二極體的發光效率，本論文試著沉積一層氮化鈦薄膜，並藉由不錯的熱穩定性與散熱作用，達到在高發光效率時有更佳之電流分布作用。
本論文利用真空濺鍍系統在AlGaInP發光二極體上沈積氮化鈦薄膜來作為透明電極。並以XRD、AES、XPS為分析的主軸，試著從材料分析的角度探討含氧量與結晶性對於氮化鈦薄膜品質的影響。氮化鈦沈積在p-型磷化鎵上呈現整流特性。因此嘗試先沈積一層鈦當作緩衝層以提升氮化鈦的薄膜品質，並可同時兼顧氮化鈦的光特性及電特性。如預期的發光二極體的臨界電壓(在20mA時)有明顯下降，且電流分佈也有增加的趨勢。

AlGaInP LEDs were commonly grown on n-GaAs substrates, the drive current from the p-type material flew to active layer and generated light. A very important factor for high efficiency for luminescence of the device was the current spreading effect of p-type layer. To improve the current spreading effect, in this thesis we tried to sputter a thin TiN films. Since with better thermodynamic stability of TiN, LEDs may have a better current spreading effect for high efficiency for luminescence than without TiN.
The work reported in this paper showed that TiN films were deposited on AlGaInP LED surfaces to form transparent contacts by sputtering system. And with the help of XRD、AES、XPS, we tried to aim at the aspect of material analysis then discussed the content of oxygen and the trend for crystallization to the quality of TiN films and the effects on LEDs. The TiN films deposited on p-GaP exhibited rectifying properties. We deposited a thin Ti as buffer layer to improve the quality of TiN films, and to look after both light output and electrical properties meanwhile. As expectancy, Vf（at 20mA）of the LEDs decreased apparently, and promoted the tendency of the current with better spreading of the devices as well.

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