自從1975年發表通過氣體導致特殊敏感層上功函數的變化之場效電晶體後，現在感測器的焦點是利用新的結構及材料來使元件擁有較好的敏感度、選擇度及穩定度。在本論文中，我們研製一系列紳化鎵-砷化鋁鎵相關氫氣感測元件，包含肖特基二極體及高速電子移動率電晶體;分析在不同的氫氣濃度、不同的操作溫度下，感測元件的反應特性。

　　首先，為了研究費米能階釘住效應對氫氣感測的影響，我們製作以白金為觸媒金屬的砷化鋁鎵金-氧-半及金-半接面肖特基式二極體，並對其氫氣反應特性作系統性的分析，由實驗得知，金屬-氧化層-半導體砷化鋁鎵二極體式氫氣感測器無論在靈敏度以及與氫氣響應的時間都明顯比沒有氧化層之感測器優良。

　　接著，我們製作了以白金金屬/氧化層/砷化鋁鎵/砷化銦鎵/砷化鎵高速電子移動率電晶體氫氣感測器，使用了不同的操作溫度及氫氣濃度來幫助我們了解氫氣在高速電子移動率電晶體的吸附機制。從實驗結果得知，隨著溫度的增加，氫原子在金屬及氧化層的介面形成電偶極的機率將減少。

　　本文中亦探討不同的觸媒金屬(鈀和白金)對於氫氣的感測反應之影響，由實驗結果可以得知以鈀金屬/氧化層/砷化鋁鎵/砷化銦鎵/砷化鎵高速電子移動率電晶體為基礎之氫氣感測器顯示了較快的響應，尤其在氫氣濃度小於100 ppmH2/air的環境下。

　　最後，我們製作了鈀金屬/氧化層/磷化銦鎵/砷化鋁鎵/砷化銦鎵/砷化鎵高速電子移動率電晶體氫氣感測器，由於磷化銦鎵擁有較大的能隙，在溫度高於1000C的操作環境下，元件擁有較穩定的感測特性。透過良好的感測結果將使元件將來可以應用於高效能的固態氫氣感測器、光電積體電路及微機電的領域。

　The sensitive hydrogen detection of a field effect transistor, based on the gas-induced work function change at a specific gas-sensitive layer, was first presented in 1975. Today, the development of sensors is focused on new devices and materials with provide improved sensitivity, selectivity and stability.

　In this dissertation, some hydrogen-sensing GaAs-AlGaAs -based devices including Schottky diode and high electron mobility transistor (HEMT) are fabricated and studied. These studied devices are operated and measured under different hydrogen concentrations and different temperature.

　First, in order to study the influence of Fermi-level pinning effect on hydrogen sensing properties, the Pt/AlGaAs MOS and MS Schottky diodes hydrogen sensors are fabricated and systemically studied. From experimental results, it is known that the MOS-type hydrogen sensor exhibits higher hydrogen detecting sensitivity and shorter hydrogen response time than those of MS-type hydrogen sensor.

　Second, a novel hydrogen sensor based on a Pt/oxide/AlGaAs/InGaAs/GaAs HEMT is fabricated and demonstrated. In order to understand the hydrogen adsorption mechanism in the HEMT device, different measurement conditions are used. From experimental results, it is known that less hydrogen atoms can form dipolar at the interface between the Pt metal and oxide layer with increasing operation temperature.
The comparison of different catalytic metals (Pd and Pt) in hydrogen sensing response is presented. From the experimental result, the HEMT hydrogen sensor based on the Pd/oxide/AlGaAs/InGaAs/GaAs exhibits higher response, especially under the hydrogen concentration is smaller than 100 ppm H2/air ambient.

　Finally, a HEMT hydrogen sensor based on a Pd/oxide/inGaP/AlGaAs/InGaAs/GaAs is fabricated and investigated. Due to larger energy bandgap of InGaP layer, the hydrogen-sensing characteristics are more stable when the operation temperature is larger than 1000C. The experimental results provide the promise for high-performance solid-state hydrogen sensor, optoelectronic integrated circuit (OEIC) and micro electro-mechanical system (MEMS) applications.

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