過渡金屬二硫屬化物中硫族原子向其他類型的轉化對於調節帶隙和構建面內異質結具有顯著優勢；然而，由於碲化物的分解溫度低，硫或硒轉化為碲原子存在困難。本研究使用四氯化碲作為原料，在遠低於材料分解溫度的 150°C 下對二硫化鉬二維膜層進行碲元素摻雜。藉由改變與氣流接觸的方向、溫度和氣流量，調控摻雜速率以及於膜層表面沉積碲烯與否。同時討論 600°C 高溫下透過鈉輔助完成碲元素摻雜，透過控制鈉濃度、溫度和氣流量，調控反應後產物的種類以及相位，2HMoTe2 、 2H-MoS2-xTex 合金和碲薄膜。

In this study, the growth parameters of MoS2 is discussed. And the performance of MoS2 film in a tellurium atmosphere is then studied. The result shows that MoS2 will become able to withstand higher temperatures, and more prone to conversion reactions in the environment of NaOH. The p-type 2D semiconductor tellurene is also observed to selective growth on top of MoS2 in the condition of a lower than 350°C temperature with using TeCl4 as the source of tellurium element.

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