本研究以溶膠凝膠法成功製備出非晶 Gd2Zr2O7 (GZO)薄膜，應用於 Al/GZO/E（E= ITO 或 Al）結構的電阻式隨機存取記憶體，並研究電極材料對元件開關行為的影響。所有元件均均呈現雙極電阻開關(BRS)模式。在經過金屬後退火（PMA）處理後，AlOx界面層有助於增強氧離子存儲能力並限制鋁金屬的電遷移。Al/GZO/ITO元件的開關週期為3027次，Vset與Vreset分別為–1.83V與0.56V，電阻比(Ron/Roff)約為10，保留時間可達104秒。 Al/GZO/Al元件則具有雙層AlOx結構，增強了燈絲斷裂的完整性，從而減少漏電流並增加開關窗口比。其開關週期為1946次，Vset與Vreset分別為–3.47V與0.29V，電阻比(Ron/Roff)約為103，保留時間同樣可達104秒。因此，GZO薄膜可以應用於不同電極上以實現所需的電阻轉換特性，使其成為RRAM應用上有潛力的候選材料。

Sol-gel derived amorphous Gd2Zr2O7 (GZO) thin films with Al/GZO/E (E= ITO or Al) structures were prepared to demonstrate the effect of electrode material on the switching behavior of resistive random access memory (RRAM) devices. All devices exhibit bipolar resistive switching (BRS) mode. After the post-metal annealing (PMA) treatment, the AlOx interfacial layer contributes to enhancing oxygen ion storage capacity and limiting the electromigration of aluminum metal . The forming-free Al/GZO/ITO device exhibits a switching cycle of 3027, a Vset/Vreset ratio of −1.83 V /0.56 V, a Ron/Roff ratio of approximately 10, and a retention time of 104 s. And the Al/GZO/Al device features a dual-layer AlOx structure, significantly improving the integrity of filament rupture to reduce leakage current and increase the switching window. Its switching cycle is 1946, with a Vset/Vreset ratio of −3.47 V /0.29 V, a Ron/Roff ratio of approximately 103, and a retention time of 104 s. Accordingly, GZO thin films can be applied to achieve the desired RS characteristics on different electrodes, making them promising candidates for RRAM applications.

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