在奈米電子元件的製造上，氧化鋅奈米柱的尺寸控制一直是個關鍵的議題。而此研究主要在探討氧化鋅奈米棒在塑膠基板上的應用。將基板沉浸在Zn(NO3)26H2O與C12H6N4溶液中，以進行幾種不同條件的沉積。在X光衍射圖形中顯示，沉積的薄膜是由氧化鋅和氫氧化鋅所構成，並且由於X光在(110)與(002)上有很強烈的反射，所以也可得知薄膜的C軸是與基板平行的。
經過電漿表面處理的薄膜，比未經過表面處理的薄膜，會有更強的峰值強度。並且表面的氧化鋅奈米結構也會有比較均勻的結晶分布。此研究製造出的增強型氧化鋅柱 TFTs表現出了很好的電晶體特性，汲極飽和電流在閘極電壓35V時可到達38.1A。
此研究成功的在塑膠基板上製造出氧化鋅奈米柱TFTs。氧化鋅奈米柱的表面粗糙度與結構，會強烈的被溶液的酸鹼值影響。此現象可以藉由觀察TFTs的氧化鋅奈米柱通道電特性，如何被溶液酸鹼值影響而得知。在溶液酸鹼值7.80時，可以得到最好的氧化鋅奈米柱TFTs電特性。在增強型模式中，表面rms粗糙度為0.94 nm、電子飽和漂移率為5.74 cm2/V.s、臨界電壓為20 V、汲極電流開關速率為1.8x105。
在有張力和與不具有機械應力影響的多種不同條件下，製作ZnO 奈米柱TFTs。有張力條件的溶液，會影響元件的汲極飽和電流、電子漂移率與開關電流比例 。與在無機械應力下長成的元件相比，在有機械應力下長成的元件，電子漂移率會從2.5×10−5 cm2/V.s 增加到4.5×10−5 cm2/V.s。這些在氧化鋅奈米柱TFTs中的電子特性改變，似乎與奈米柱間距離的變化有關。此研究為第一個在彎折狀態下還能完整正常工作的軟式氧化鋅TFTs，並且描述了在溶液法製作的氧化鋅奈米柱，必須要解決的實際問題。
此研究也利用溶液法，長成鈦氧化鋯鋇質介電層的並五苯有機TFTs。利用寫入/讀出的操作，元件表現出記憶體的特性，如可回復臨界電壓偏移與非破壞讀取。也測試了資料的保留時間與重複切換循環耐力測試，得以驗證元件的可靠度。更討論了記憶效應可能的原理。此研究結果開啟了該元件，在有機非揮發性記憶體的應用機會。
此研究也利用了溶液製程實現了一個在低成本、低溫環境、可饒基板的聚(4-乙烯基苯酚)電晶體。一個6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene–graphene混和半導體在可饒與玻璃板上、室溫中，成功的實現了底層閘極與底層接觸場效電晶體元件。TIPS pentacene–graphene混和半導體與poly(4-vinylphenol)閘極介電質的交互連接，表現出有效的電子遷移率0.076 cm2V−1s−1，並且在-40V閘極電壓時，臨界電壓為-0.7V。相較之下，一般TIPS並五苯電晶體只有四分之一的電子遷移率0.019 cm2V−1s−1，並且臨界電壓也為5V。

The control dimension and morphology in Zinc Oxide (ZnO) nanorods are critical issues in the fabrication of electronic nanodevice. This study discusses ZnO nanorods on plastic substrate for Thin Film Transistor (TFTs) applications. The substrate was immersed in a zinc nitrate hexahydrate Zn(NO3)26H2O and hexamethylenetetramine C12H6N4 solution under various deposition conditions. The X-ray diffraction (XRD) pattern showed that the films were composed of ZnO and Zn(OH)2, and that the ZnO crystal had strong x-ray reflection peaks (110) and (002), in which the c-axis was parallel to the substrate.
The films with plasma surface pre-treatment has stronger (110) peak intensity than that without plasma surface pre-treatment. Also, very uniform grain size of the ZnO nanostructures can be seen. The fabricated enhancement mode ZnO TFTs exhibiting good transistor behavior with the drain saturation current of 38.1 A at VGS = 35 V can be achieved.
The ZnO nanorods based TFTs on plastic substrate by solution method under low temperature were successfully fabricated. The pH of solution and the surface rms roughness greatly influenced the structure and morphology of the ZnO nanorods. It can be seen that the electrical properties of ZnO nanorods based-TFTs is depend greatly on the pH value of the solution and the surface rms roughness of ZnO nanorods channel. The best electrical properties of the ZnO nanorods based-TFTs was obtained at pH value of the solution of 7.80 and surface rms roughness value of 0.94 nm in which the ZnO nanorods based-TFTs operates in the enhancement mode, exhibiting the saturation mobility of about 5.74 cm2/V.s, a threshold voltage of 20 V and drain current on-to-off ratio of 1.8x105.
The ZnO nanorods based-TFTs are fabricated under different process such as under strain tensile effect and without mechanical effect. As observed in strain tensile solution process effect, the saturated drain current, field-effect mobility and on/off ratio was changed. The field-effect mobility of 2.5×10−5 cm2/V.s in the obtained ZnO channel layer without mechanical bending effect is increases to 4.5×10−5 cm2/V.s in films without mechanical bending effect. These changes of the electrical performance of ZnO nanorods based TFTs caused by bending of the substrate are likely related to change in the distance between the nanorods. This study is meaningful in that this is the first report on solution-processed flexible ZnO TFTs which are fully functional in the bent state solution process and describes the practical problems that must be solved in order to make ZnO TFTs on plastic substrates through the solution methods of ZnO nanorods.
Pentacene-based organic TFTs (OTFT) with solution-processed barium zirconate titanate dielectric layers are demonstrated. According to the programming/erasing operations, the devices exhibited memory characteristics, such as reversible threshold voltage shifts and nondestructive readout. The reliability of the memory was confirmed by data retention time and repeated switching cycles’ endurance testing. The possible mechanism of the memory effect was also discussed. These results suggest that the devices could potentially be applied to nonvolatile memory applications in organic electronics.
Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene–graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. The TIPS pentacene–graphene hybrid semiconductor-based OTFTs cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm2V−1s−1 and a threshold voltage of −0.7 V at Vgs = −40 V. By contrast, typical TIPS Pentacene shows four times lower mobility of 0.019 cm2V−1s−1 and a threshold voltage of 5 V.

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[11] B. Singh, N. Marjanovic, N. S. Sariciftci, R. Schwodiauer, and S. Bauer, “Electrical characteristics of metal-insulator-semiconductor diodes and transistors with space charge electric insulators: Towards nonvolatile organic memories,” IEEE Trans. Dielectr. Electr. Insul., vol. 13, issue 5, pp. 1082-1086, Oct. 2006.
[12] S.J. Kang, I. Bae, Y. J. Park, T.H Park, J. Sung, S.C. Yoon, K.H Kim, D.H Choi and C. Park, “Non-volatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilylethynyl Pentacene field-effect transistor,” Adv. Funct. Mater., vol. 19, issue 10, pp. 1609-1616, May 2009.

5.5 References

[1] S.I. Shin, J.H. Kwon, H. Kang and B.K. Ju, “Solution-processed 6,13 bis(triisopropylsilylethynyl)(TIPS) Pentacene thin-film transistors with a polymer dielectric on a flexible substrate”, Semicond. Sci. Technol. Vol. 23, issue 8, pp. 085009, June 2008.
[2] L.L Chua, J. Zaumseil, J.F. Chang, C.W. Ou Eric, K.H Ho Peter, H. Sirringhaus and R.H. Friend, “General observation of n-type field-effect behaviour inorganic semiconductors”, Nature, vol. 434, issue 7030, pp.194-195, March 2005.
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[5] T.A Pham, J.S. Kim and Y.T. Jeong, “One-step reduction of graphene oxide with l-glutathione”, Colloids Surf. A: Physicochemical and Engineering Aspects, vol. 384, issue 1-3, pp. 543-548, July 2011.
[6] J.E. Anthony, J.S. Brooks, D.L. Eaton and S.R. Parkin, “Functionalized pentacene: improved electronic properties from control of solid-state order,” J. Am. Chem. Soc.,vol. 123, issue 38, pp. 9482-9483, Sept. 2001.
[7] A. Bolognesi, A.D. Carlo and P. Lugli, “Influence of carrier mobility and contact barrier height on the electrical characteristics of organic transistors”, Appl. Phys. Lett., vol. 81, issue 24, pp. 4646-4648, Dec. 2002.
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