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研究生： 陳元斌
Chen, Yuan-Bin
論文名稱： 微波介電材料及薄膜應用之研究
Study of Microwave Dielectric Materials and Thin Film Applications
指導教授： 黃正亮
Huang, Cheng-Liang
魏炯權
Wei, Chung-Chuang
學位類別： 博士
Doctor
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2006
畢業學年度： 94
語文別： 英文
論文頁數： 103
中文關鍵詞： 微波
外文關鍵詞： microwave
相關次數： 點閱：82  下載：6 
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    • 微波介電材料所製作之介電共振器具有高介電常數，高溫度穩定係數及低損失 因子等特性，適合應用於微波濾波器、震盪器、天線與微波積體電路中。近年來由於高頻通訊元件快速之發展，元件之輕薄短小為其重要之研究目標。就縮小體積之多層 陶瓷濾波器而言，降低燒結溫度便為發展介電材料之重要趨勢。此外，介電材料之積 體化也亦為實現微波高頻元件之重要課題之一。本論文針對上述之方向做了下列二大部分進行探討與研究：
    一、高品質因子，高溫度穩定性與高介電常數之微波陶瓷介電材料備製
    [a] La(Mg1/2Ti1/2)O3約有29.8的介電常數,而Qxf值有75500 GHz,而f 值約有-65ppm/oC.嘗試在特性優良之La(Mg1/2Ti1/2)O3介電材料中，加入不同燒結促進劑，CuO，B2O3去降低其燒結溫度，以改善介電特性並達到降低燒結溫度之目的。
    [b] 而CaTiO3介電常數 > 200， Qf < 1000, f > 1100ppm/C，利用正f的特性與La(Mg1/2Ti1/2)O3相混,調整其共振頻率溫度係數，用以改善La(Mg1/2Ti1/2)O3的微波特性以及探討其對於微波特性之影響。
    二、MgTiO3薄膜特性的分析及高頻應用
    [a] 利用自製之MgTiO3靶材以射頻磁控濺鍍法進行薄膜之製作，在不同之製程參數下，製作高品質之介電薄膜，經由進行各種不同之薄膜分析技術，以進行物理特性及電學特性之研究。
    [b] 並以MgTiO3為介電材料製作MIM薄膜電容，量測高頻特性。

    Due to the development in mobile communication, mobile telephone systems, as well as in satellite broadcasting systems was rapidly, how to design the high-quality devices applied in analog circuits are the most important homework. There are two primary branches in this research. One part is to develop the dielectric ceramic systems that exhibit great dielectric properties. The other part is to design and realize the multilayer dielectric filters.
    1.Study and fabrications of microwave dielectric resonators
    (a) La(Mg1/2Ti1/2)O3 has a high dielectric constant ( ~ 29), a high quality factor (Qxf value ~75500 GHz) and a negative f value (-65 ppm/oC). The crystal structure of La(Mg1/2Ti1/2)O3 was reported to be cubic. It has found many applications in microwave systems such as in temperature-compensation-type capacitors, resonators and antennas. However, the sintering temperatures for al cases were as high as 1500 ~ 1600 oC. In this studies, the effect of CuO and B2O3 addition on the sintering temperatures of La(Mg1/2Ti1/2)O3 ceramics has been investigated.
    (b) La(Mg1/2Ti1/2)O3 has a high dielectric constant ( ~ 29), a high quality factor (Q×f value ~75500 GHz) and a negative f value (-65ppm/oC). The crystal structure of La(Mg1/2Ti1/2)O3 was reported to be cubic. CaTiO3 ( > 200, Qf < 1000, f > 1100ppm/C ) with a positive f value was introduced to into the mixture form a solid solution xLa(Mg1/2Ti1/2)O3-(1-x)CaTiO3 to compensate for the f value.
    2. MgTiO3 thin film electrical characteristics and the application
    (a) A MgTiO3 target was prepared and used for deposition. MgTiO3 thin films were deposited at different processing parameters. The dependence of the physical and electrical characteristics on rf power, substrate temperature and Ar/O2 ratios were also investigate. MgTiO3 thin films were fabricated by rf magnetron sputtering have been researched. An MgTiO3 target was prepared and used for deposition. MgTiO3 thin films were deposited at different processing parameters. The dependence of the physical and electrical characteristics on rf power, substrate temperature and Ar/O2 ratios were also investigate.
    (b) Metal-insulator-metal (MIM) capacitors are fabricated using sputtered MgTiO3 with Al for top and bottom electrodes. High-capacitance densities from 3.1 to 5.49 fF/μm2 have been achieved while maintaining the leakage current densities 3.09×10-8 A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.

    Abstract I Contents V Acknowledge VIII Table Captions IX Figure Captions X Chapter 1 Introduction 1 Chapter 2 Theory of Dielectric Resonator and Thin film 5 2.1 Theory of Microwave Dielectric Properties 5 2.2 Analysis of Dielectric Resonator 7 2.3 Thin Film 10 2.4 Analysis of Electrical Properties of Films 11 2.4.1 I-V Characteristic 11 2.4.2 C-V Characteristic 13 Chapter 3 Microwave Dielectric Properties of La(Mg1/2Ti1/2)O3 at Microwave Frequency 22 3.1 Introduction 22 3.2 Experimental 24 3.2.1 Sample Preparations 24 3.2.2 Characteristics Analysis and Measurement 25 3.2.2.1 X-Ray and SEM 25 3.3 Results and Discussion 26 3.3.1 La(Mg1/2Ti1/2)O3 with Sintering Aids 26 3.3.2 La(Mg1/2Ti1/2)O3-CaTiO3 with Sintering Aids 31 3.3.3 Microwave Dielectric Properties and Microstructures of 0.5La(Mg1/2Ti1/2)O3-0.5CaTiO3 Ceramics with B2O3 Addition 3.4 Conclusions 37 Chapter 4 Properties of MgTiO3 Thin Films Prepared by Rf Magnetron Sputtering for Microwave Applications 4.1 Introduction 57 4.2 Experimental Procedures 58 4.2.1 Target Fabrication 58 4.2.2 Clean Substrate 59 4.2.3 Deposition Process 59 4.2.4 Analysis of Physical and Chemical Properties of Films 60 4.3 Results and Discussion 61 4.3.1 Crystal Structure of Films 61 4.3.2 Electrical Properties 63 4.3.3 Effect of Rf Power of Physical Properties of MgTiO3 Films by Rf Magnetron Sputtering 64 4.3.4 Crystallographic Phase and Microstructure of MgTiO3 Thin Films 64 4.3.5 Electrical Properties of MgTiO3 Thin Films 66 4.4 Conclusions 67 Chapter 5 High-Density MIM Capacitors Using MgTiO3 Dielectrics 5.1 Introduction 80 5.2 Experimental Procedures 81 5.3 Results and Discussion 81 5.4 Conclusions 87 Chapter 6 Conclusions Conclusions 94 References 97

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