本論文探討整體(3D)奈米柱狀結構之MIS二極體式氫氣感測器的研製。吾人研究利用硝酸銀及氫氟酸之蝕刻溶液於N型(100)矽基板上成長奈米柱狀結構。然後於此結構上使用熱鎢絲化學氣相沉積法(HWCVD)以及射頻濺鍍系統(Sputtering system)成長不同的High-K薄膜(Diamond、HfO2、TiO2)作為本質層。再用熱蒸鍍系統(Thermal evaporation)蒸鍍上不同的金屬(Pd、Pt、Pd/Pt)作為氫氣離子化的催化層。最後再蒸鍍鋁金屬當指叉式電極完成Al/PdPt/High-K/n-Si/Al MIS氫氣感測元件。
本研究分為四個部分: (1)不同材料催化金屬層(Pd、Pt、Pd/Pt)之比較，(2)不同本質絕緣層材料（Diamond、HfO2、TiO2）之比較，(3)　2D平面薄膜式與3D奈米柱狀結構之比較， (4)不同Diamond絕緣層薄膜厚度的比較。並利用Raman、XRD量測Diamond絕緣層原子間的鍵結與薄膜結晶; SEM與AFM觀察表面結構與粗糙度;元件I-V的量測則利用HP4145半導體量測分析儀來進行。
實驗結果顯示，催化金屬層為Pd/Pt時，有最佳感測能力並有效地改善金屬在高溫下與氫氣產生氫胞(hydrogen　blister)現象。又奈米柱狀結構可以增加氣體接觸之面積和體積比，故靈敏度由平面薄膜式的1350%提升至2860%；另外，三種不同High-K本質絕緣層中以Diamond對氫氣感測能力最佳。不論在低或高溫度及不同濃度條件下皆有較佳之感測能力。如在溫度200℃、逆偏壓3V及濃度100ppm下，其靈敏度為217%，相較於HfO2及TiO2的122%和121%分別提高1.78 倍及1.79 倍。且以Diamond為本質絕緣層的3D 結構者，在溫度200℃、濃度100ppm的環境下也擁有最快速的反應時間(9秒)、最佳的再現性以及對甲烷及二氧化碳之氣體選擇比。
本論文之3D奈米柱狀結構MIS氫氣感測器在溫度150℃、濃度100ppm下，其靈敏度為202%、反應時間為9sec。相較於已發表文獻Pt/HfON/SiC之平面MIS Schottky diode在溫度150℃、濃度100ppm下，靈敏度53%、反應時間10.5s為佳。

We developed the 3D nano rod structure Al/PdPt/ high-K/n-Si/Al MIS Schottky diode for H2 gas sensing applications. Firstly, the Si nano rods were formed on the n type (100) Si substrates with AgNO3and HF mixed etching solution. Then deposited the intrinsic high-K thin films (diamond、HfO2、TiO2) with HWCVD(Hot-Wire CVD) and sputtering system. Followed by deposition of various metal such as Pd、Pt and Pd/Pt as catalytic layer. In final, the device was completed by evaporation of Al on the top and bottom, respectively as electrode contact.
We optimized the 3D hydrogen sensor with the following studies: (a) using different catalytic material Pd、Pt and Pd/Pt, (b) to deposit diamond、HfO2 and TiO2 as intrinsic dielectric layer, (c) comparison of the 3D nano rod structure with the conventional 2D thin film type, and (d) to vary intrinsic dielectric layer thickness. Besides, to get the best quality of diamond as the intrinsic layer, we used Raman, XRD, SEM and AFM, respectively for bond structure measurement, crystallinity analyzing, surface roughness, and morphology inspection.
Experimental results show that composite of Pd/Pt has the highest activity to catalytic hydrogen atoms into ions, and suppress the hydrogen blister issue. Besides, the nano rods structure indeed can promote sensitivity from 1350% of the conventional 2D thin film type to 2860%. Furthermore, use of diamond as i-layer achieves the fast response time of 9sec, and the highest sensitivity of 217% respectively for 100ppm H2 ambient with the condition of - 3V, 200oC. In addition, we found the developed 3D MIS diode H2 sensor has no significant sensing action to CO2 and alcohol gases
Under 150 oC /100ppm H2 ambient, the developed 3D H2 sensor has the best performances of 202% and 9 sec, respectively for sensitivity of and response time , which are better than the reported Pt/HfON/SiC MIS Schottky diode of 53% and 10.5 sec under same conditions.

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